Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

Cusumano, Pasquale; Ooi, B. S.; Helmy, Amr S.; Ayling, S.G.; Bryce, A.C.; Marsh, J.H.; Voegele, B.; Rose, M. J.

doi:10.1063/1.364295

Cited by 42 publications

(15 citation statements)

References 13 publications

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“…[13][14][15][16] To minimize group-V outdiffusion that will increase surface roughness, and group-III vacancy generation that will result in a large degree of quantum-well intermixing, four cycles annealing at 950°C for 30 s each was performed. The focus in this paper is on the performance of LD after a low degree of intermixing, limited to 5-nm blueshift.…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Al-Jabr¹,

Mishra²,

Majid³

et al. 2016

J. Nanophoton

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Abstract. We achieved considerable laser diode (LD) improvement after annealing InGaP/ InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (I th ), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (η i ), from 63% to 68%, and increased internal losses α i , from 14.3 to 18.6 cm −1 . Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Resultsmentioning

confidence: 99%

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Al-Jabr¹,

Mishra²,

Majid³

et al. 2016

J. Nanophoton

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“…This is consistent with the results reported by Rao et al 17 that showed that SiO 2 :P ͑1% P by weight͒ is able to enhance intermixing although they found that P-doped film has higher disordering efficiency than the undoped film. However, in other work it was reported 18 that SiO 2 doped with 5% P by weight could substantially suppress intermixing in laser structures. Two explanations were proposed by those authors to explain the suppression.…”

mentioning

confidence: 87%

Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

Heijden

Tan

et al. 2002

Applied Physics Letters

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The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] This dependence on multiple parameters and the current lack of understanding of the mechanisms that underlie the disordering process have precluded IFD from becoming a viable technology for the fabrication and integration of optoelectronic devices. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] This dependence on multiple parameters and the current lack of understanding of the mechanisms that underlie the disordering process have precluded IFD from becoming a viable technology for the fabrication and integration of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress

Doshi

Deenapanray

Tan

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Arsenic antisite defects in p -GaAs grown by metal-organic chemical-vapor deposition and the EL2 defectThe effect of stress on defect creation and diffusion during impurity-free disordering of SiO x -capped n-GaAs epitaxial layers has been investigated using deep level transient spectroscopy. The oxygen content in the SiO x layer and the nature of the stress that it imposes on the GaAs layer were varied by changing the nitrous oxide flow rate, N, during plasma-enhanced chemical vapor deposition of the capping layer. The peak intensity of defects S1 and S4 increased with the increasing nitrous oxide flow rate to exhibit a maximum in the range 80 sccmϽNϽ200 sccm. Any further increase in N resulted in a decrease in peak defect intensity, which reached an almost constant value for N Ͼ350 sccm. On the other hand, the peak intensity of S2* increased linearly with N. We have explained the maximum in the intensity of defects S1 and S4 for 80 sccmϽNϽ200 sccm to be due to a corresponding maximum in the compressive stress which is experienced by the capped GaAs layer during annealing. Although the creation of S2*, which we have proposed to be a complex involving the gallium vacancy (V Ga ), is enhanced with the increasing compressive stress, it also becomes efficiently converted into the arsenic-antisite, As Ga . The compound effect of these opposing mechanisms results in a linear dependence of the peak intensity of S2* on N. This study is to the best of our knowledge the first to provide the evidence for the stress-dependent anti-correlation between V Ga -and As Ga -related defects in GaAs. We have also narrowed the origin of S1 to complexes involving arsenic interstitials, As i , and/or As Ga .

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Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

Cited by 42 publications

References 13 publications

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress

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