Disordering of Ga1−<i>x</i>Al<i>x</i>As-GaAs quantum well structures by donor sulfur diffusion

Rao, E. V. K.; Thibierge, H.; Brillouet, F.; Alexandre, François; Azoulay, R.

doi:10.1063/1.95868

Cited by 62 publications

(5 citation statements)

References 15 publications

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“…Quantum well intermixing studies of AlGaAs/GaAs heterostructure also indicate that diffusion of species which occupy the group III sublattice is enhanced by the introduction of n-type group IV and group VI dopants. 81,[95][96][97][98] Direct evidence of vacancies using STM have been confirmed in n-type GaAs [99][100][101] and positron annihilation results 102-109 also indicate that n-type doping results in higher concentration of vacancies than is observed in un-doped or p-type GaAs. There are also reports of superdilation of GaAs and InAs with n-type doping and dopant-vacancy complexes have been suggested as the cause for the unexpected increases in lattice parameter at high doping concentrations.…”

Section: Concentration Dependent Si Diffusion In Ingaas Andmentioning

confidence: 94%

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As

Lind

Aldridge

Hatem

et al. 2016

ECS J. Solid State Sci. Technol.

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An overview of various processing and dopant considerations for the creation of heavily-doped n-InGaAs is presented. A large body of experimental evidence and theoretical prediction point to dopant vacancy-complexing as the limiting mechanism for electrical activation in heavily Si doped InGaAs and GaAs. Dopant incorporation techniques which require thermal treatment steps to move dopants onto lattice sites like ion implantation and monolayer doping exhibit stable activation up to a limit of ≈1.5 × 1019 cm−3. Growth-based dopant incorporation methods have shown much higher (5 × 1019 cm−3) active concentrations but these activate concentrations are shown in multiple studies to be metastable. Other device specific process-flow constraints with respect to modern CMOS devices which may make some means of dopant incorporation method, or species selection more appropriate for a given application are also discussed.

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Section: Concentration Dependent Si Diffusion In Ingaas Andmentioning

confidence: 94%

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As

Lind

Aldridge

Hatem

et al. 2016

ECS J. Solid State Sci. Technol.

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“…By photoluminescence study, it has been shown that enhanced Al interdiffusion in AlGaAs superlattice can be produced by S diffusion through the sample surface. Further, the extent of Al interdiffusion was found to depend on the S concentration [5].…”

Section: Introductionmentioning

confidence: 92%

“…It has been known that mixing in AlGaAs based superlattice can be dramatically enhanced by introducing impurities such as Zn [3], Si [4], S [5] or Se [6].…”

Section: Introductionmentioning

confidence: 99%

Te Induced AlAs/GaAs Superlattice Mixing

Mel

Schwarz²,

Venkatesan

et al. 1988

MRS Proc.

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Te enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry.The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations 17 18 -3 of 2x10 to 5x10 cm-.In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

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“…In our study, the largest blue shifts are observed in samples grown on S-doped InP substrates, which originally had led us to believe that the mechanism responsible for the blue shift was related to IILD. Sulphur is an n-type dopant in the GaInAsP system, thought to substitutionally reside on the group V sublattice, and has been shown to be responsible for IILD in the GaAlAs/GaAs system (Gavrilovic et al 1985, Rao et al 1985, Baba-Ali et a[ 1991. Recently, however, Glew and co-workers (1992) reported that the activation energy for interdiffusion of undoped GaInAs/GaInAsP MQW structures grown on InP substrates, derived from photoluminescence measurements, varies as a logarithmic function of the substrate etch pit density.…”

Section: Multilayer Thermal Stability In Relation To Spatially Varyin...mentioning

confidence: 99%

The control and evaluation of blue shift in GaInAs/GaInAsP multiple quantum well structures for integrated lasers and Stark-effect modulators

Mallard¹,

Thrush²,

Martin³

et al. 1993

Semicond. Sci. Technol.

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We report on the structural and optical characterization of nominally lattice-matched GalnAs/GalnAsP multiple quantum well (MOW) structures grown on (100) InP substrates by metalorganic chemical vapour deposition (MOCVO) which undergo a 'blue shift' in photoluminescence upon thermal annealing. Electron microscope and magneto-optical analyses show that the shifts are principally due to layer interdiffusion, which results in a change in composition of the well centres These compositional variations are quantitatively measured by high-resolution analytical electron microscopy. This analysis demonstrates that the diffusion of the group V elements in the undoped Maws is faster than that of the group ill elements, resulting in the incorporation of excess coherency strain in the material. Analysis of a number of samples grown on a variety of substrates shows that the wavelength shift is particularly large when the substrates are S doped, although the substrate dopant does not participate directly in the diffusion mechanism. We attribute this behaviour to the typically low dislocation density of S-doped substrates. We report, for the first time, a direct measurement of the correlation between the spatial variation in the magnitude of the blue shift and the presence of dislocations in the MOWS. On the other hand, the incorporation of Zn as a dopant in the MOW region reduces the extent to which the blue shift,,occurs. A model is proposed which explains how the presence of dislocations, as well as the substrate and MOW doping, could indirectly influence the extent of the layet interdiffusion.

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Disordering of Ga1−xAlxAs-GaAs quantum well structures by donor sulfur diffusion

Cited by 62 publications

References 15 publications

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As

Te Induced AlAs/GaAs Superlattice Mixing

The control and evaluation of blue shift in GaInAs/GaInAsP multiple quantum well structures for integrated lasers and Stark-effect modulators

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Disordering of Ga1−xAlxAs-GaAs quantum well structures by donor sulfur diffusion

Cited by 62 publications

References 15 publications

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As

Te Induced AlAs/GaAs Superlattice Mixing

The control and evaluation of blue shift in GaInAs/GaInAsP multiple quantum well structures for integrated lasers and Stark-effect modulators

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Product

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Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As