Incorporation of nitrogen in chemical vapor deposition diamond

Samlenski, R.; Haug, Christian; Brenn, R.; Wild, C.; Locher, R.; Koidl, P.

doi:10.1063/1.114788

Cited by 89 publications

(39 citation statements)

References 8 publications

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“…However, its incorporation efficiency $0.1-1 is significantly higher than for nitrogen $10 À4 to 10 À3 [2,23,24]. Jin and Moustakas explain this behaviour simply in terms of differences in the bonding energy E C-C , E C-N , and E C-B , which vary as 83, 73, and 89 kcal/mol [2].…”

Section: Resultsmentioning

confidence: 88%

Mutual interaction of N, B, and O during heteroepitaxial diamond growth: Triggering the nitrogen induced growth acceleration

Sartori

Schreck

2014

Physica Status Solidi (a)

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The mutual interaction of N, B, and O during heteroepitaxial diamond growth by microwave plasma chemical vapour deposition (MPCVD) is investigated. The study comprises in situ growth rate measurements by laser reflection interferometry (LRI) and the monitoring of impurity containing gas phase species like CN and BH by optical emission spectroscopy (OES). In the gas phase, among the combinations (N, B), (N, O), and (B, O) only the latter pair shows a measurable mutual influence. In contrast, growth rate measurements reveal a strong interaction also for the couple (N, B). It is found that the high growth rate enhancement obtainable by nitrogen addition is completely suppressed by boron contamination at ppm levels. At even lower boron concentrations a step‐like behaviour is observed, i.e., the nitrogen is initially inactive before it develops its effect above a defined threshold concentration. Addition of oxygen to the gas mixture proves to be an effective method to push this threshold to lower nitrogen concentrations and to trigger the action of nitrogen even in highly contaminated reactors. We estimate that the presence of 1 boron atom can cancel the effect of 1000 nitrogen atoms in the gas phase.

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Section: Resultsmentioning

confidence: 88%

Mutual interaction of N, B, and O during heteroepitaxial diamond growth: Triggering the nitrogen induced growth acceleration

Sartori

Schreck

2014

Physica Status Solidi (a)

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“…1. These samples exhibited black corners corresponding to the (1 1 1) growth sectors which are well known to incorporate more defects and more non-diamond phases [13,14]. However, all the layers presented a high transparency and were virtually uncoloured in their centre.…”

Section: Growth Rates and Optical Observationmentioning

confidence: 94%

Multiple growth and characterization of thick diamond single crystals using chemical vapour deposition working in pulsed mode

Tallaire¹,

Achard²,

Secroun³

et al. 2006

Journal of Crystal Growth

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“…due to vibrations or thermal drift) will result in a false magnetic signal. It has been recognized that nitrogen incorporation during diamond growth is extremely sensitive to the growth plane [35,36] and thus surface steps on a 100 surface. By reducing the misorientation of the surface cut (typically 1% in our samples), we expect to be able to enhance the incorporation homoneity.…”

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confidence: 99%

High density nitrogen-vacancy sensing surface created via He+ ion implantation of 12C diamond

Kleinsasser

Stanfield

Banks

et al. 2016

Applied Physics Letters

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We present a promising method for creating high-density ensembles of nitrogen-vacancy centers with narrow spin-resonances for high-sensitivity magnetic imaging. Practically, narrow spinresonance linewidths substantially reduce the optical and RF power requirements for ensemble-based sensing. The method combines isotope purified diamond growth, in situ nitrogen doping, and helium ion implantation to realize a 100 nm-thick sensing surface. The obtained 10 17 cm −3 nitrogen-vacancy density is only a factor of 10 less than the highest densities reported to date, with an observed spin resonance linewidth over 10 times more narrow. The 200 kHz linewidth is most likely limited by dipolar broadening indicating even further reduction of the linewidth is desirable and possible.The nitrogen-vacancy (NV) center in diamond is a versatile room-temperature magnetic sensor which can operate in a wide variety of modalities, from nanometerscale imaging with single centers [1, 2] to sub-picotesla sensitivities using ensembles [3]. Ensemble-based magnetic imaging, utilizing a two-dimensional array of NV centers [4][5][6], combines relatively high spatial resolution with high magnetic sensitivity. These arrays are ideal for imaging applications ranging from detecting magnetically tagged biological specimens [7,8] to fundamental studies of magnetic thin films [9]. A key challenge for array-based sensors is creating a high density of NV centers while still preserving the desirable NV spin properties. Here we report on a promising method which combines isotope purified diamond growth, in situ nitrogen doping and helium ion implantation. In the 100 nmthick sensor layer, we realize an NV density of 10 17 cm −3 with a 200 kHz magnetic resonance linewidth. This corresponds to a a DC magnetic sensitivity ranging from 170 nT (current experimental conditions) to 10 nT (optimized experimental conditions) for a 1 µm 2 pixel and 1 second measurement time.Magnetic sensing utilizing NV centers is based on optically-detected magnetic resonance (ODMR) [10][11][12]. In the ideal shot-noise limit, the DC magnetic sensitivity is given by [9] in which h/gµ B = 36 µT/MHz, C is the resonance dip contrast, η is the photon collection efficiency, δν is the full-width at half maximum resonance linewidth, n N V is the density of NV centers in imaging pixel volume V , and t is the measurement time. From Eq. 1, it is apparent that to minimize δB ideal for a given linewidth δν, one would like to maximize the NV density n N V . Increasing n N V , however, can also increase δν. For example, lattice damage during the NV creation process can create inhomogeneous strain-fields [13]. More fundamentally, eventually NV-NV and NV-N dipolar interactions will contribute to line broadening. This dipolar broadening, δν dp , is proportional to the nitrogen density n N [14,15]. Since n N V is typically proportional to n N , we can divide δ ν into two components, δν = δν 0 + δν dp = δν 0 + An N V , to obtainin which δν 0 depends on factors independent of NV density (e.g. hyperfi...

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Incorporation of nitrogen in chemical vapor deposition diamond

Abstract: Articles you may be interested inComparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-fieldemission properties of chemical-vapor-deposited diamond films

Cited by 89 publications

References 8 publications

Mutual interaction of N, B, and O during heteroepitaxial diamond growth: Triggering the nitrogen induced growth acceleration

Mutual interaction of N, B, and O during heteroepitaxial diamond growth: Triggering the nitrogen induced growth acceleration

Multiple growth and characterization of thick diamond single crystals using chemical vapour deposition working in pulsed mode

High density nitrogen-vacancy sensing surface created via He+ ion implantation of 12C diamond

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