Increasing efficiency of hierarchical nanostructured heterojunction solar cells to 16.3% via controlling interface recombination

Wang, Fengyou; Jiang, Yuanjian; Li, Tiantian; Zhao, Ying; Zhang, Xiaodan

doi:10.1039/c5ta06846k

Cited by 14 publications

(7 citation statements)

References 32 publications

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“…In this sense, excellent surface passivation for the Si nanoarrays is one of the critical issues to obtain superior device performance. To suppress the surface recombination, several thin films including Al 2 O 3 , hydrogenated amorphous silicon (a‐Si:H), and TiO 2 have been deposited on the Si nanostructures to passivate the surface dangling bonds. However, due to the high aspect ratio of the Si nanoarrays, preparation of the passivation layer by post‐deposition methods is difficult to ensure the conformal growth of the films from the top to bottom of the nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Realization of 16.9% Efficiency on Nanowires Heterojunction Solar Cells with Dopant‐Free Contact for Bifacial Polarities

Wang

Zhang

Yang

et al. 2018

Adv Funct Materials

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Low-cost and efficient interfacial layer construction with the required charge selectivity and compatibility is necessary for nanostructured solar cells, and the proper integration of the interfacial layer with the light-trapping system is required to improve the power conversion efficiency of the cell. Herein, low-cost Si nanowires-based solar cells with tunneling heterojunctions are developed by the deposition of MoO x and spin-coating of Cs 2 CO 3 as the carrier-selective layers. The power conversion efficiency of 16.9% for a device of 4 cm 2 in area is achieved by Si nanowires solar cells by the self-assembly of ultra-thin SiO x as the surface tunneling passivation layer. Self-assembly is realized with an ultraviolet O 3 treatment process at room temperature. Quasi-steady-state photoconductance, microwave-detected photoconductance decay, and constant current-voltage measurements are used to characterize the passivation quality and tunneling transportation properties of the ultra-thin SiO x layers. Interfacial charge recombination is suppressed and effective carrier tunneling properties are developed by the growth of ≈1.5 nm thick SiO x layers on the surfaces of the Si nanowires. This proposed Si nanowires solar cell architecture featuring tunneling heterojunctions achieves high performance and may be suitable for fabricating industrialized Si nanowires-based photovoltaic devices through a cost-effective, simple, and low-temperature process.

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Section: Introductionmentioning

confidence: 99%

Realization of 16.9% Efficiency on Nanowires Heterojunction Solar Cells with Dopant‐Free Contact for Bifacial Polarities

Wang

Zhang

Yang

et al. 2018

Adv Funct Materials

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“…Integrating Si nanostructures with Si microstructures, forming a so-called 'multi-scale texture' or 'hierarchical structure', is expected to have an antireflection effect from both Si nanostructures and microstructures [49][50][51][52]. Figure 4(a) shows an example of the hierarchical structures.…”

Section: Quasi-omnidirectional Antireflection Performancementioning

confidence: 99%

Quasi-omnidirectional crystalline silicon solar cells

Zhong

Shen

2020

J. Phys. D: Appl. Phys.

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Crystalline silicon (c-Si) solar cells play an important role in the photovoltaic (PV) industry and make PV electricity begin to realize grid parity. Nevertheless, conventional c-Si solar cells are sensitive to angle of incidence (AOI) and have less power conversion efficiency (η) under oblique AOI, which influences the maximization of daily/yearly power output as the sun moves with time. Although the use of sun-tracking systems is an effective way to solve this problem, it is costly. As regards increasing the daily/yearly power output with low cost, quasi-omnidirectional c-Si solar cells are good candidates and have attracted considerable interest. The η of these solar cells is insensitive to AOI within a large range (for example, <60°) due to their quasi-omnidirectional antireflection ability. In this article, we will review different antireflection mechanisms and show how to realize quasi-omnidirectional antireflection in c-Si solar cells by specific structures, especially Si nanostructures due to their superior ability in manipulating light. We will see that quasi-omnidirectional c-Si solar cells can be realized by various Si nanostructures, but most of them suffer from lower η than conventional c-Si solar cells because of much more severe carrier recombination. Therefore, we will also present an overview of countermeasures and progress in mitigating electrical loss of quasi-omnidirectional c-Si solar cells. Finally, we will demonstrate high-performance quasi-omnidirectional c-Si, ultrathin c-Si and multicrystalline silicon solar cells realized by Si nanostructures with low aspect ratios and their advantages compared to their conventional c-Si counterparts.

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“…Plasma enhanced chemical vapor deposition (PECVD), a mature thin lm deposition technology widely used in commercial industry, is commonly adopted to deposit silicon thin lms. Reported V oc and conversion efficiency of RJ-HET solar cells continuously improved and exceeded RJ-HOMO solar cells 14,15 in a short time. However, interface and growth layers have to experience ion bombardment during PECVD process, thus surface damage is unavoidable.…”

Section: Introductionmentioning

confidence: 99%

Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

et al. 2017

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Increasing efficiency of hierarchical nanostructured heterojunction solar cells to 16.3% via controlling interface recombination

Abstract: With a system of interface engineering treatment, heterojunction solar cells fabricated with hierarchical nanostructures exhibit an efficiency of 16.3% using cost-effective as-cut Czochralski n-type silicon substrates.

Cited by 14 publications

References 32 publications

Realization of 16.9% Efficiency on Nanowires Heterojunction Solar Cells with Dopant‐Free Contact for Bifacial Polarities

Realization of 16.9% Efficiency on Nanowires Heterojunction Solar Cells with Dopant‐Free Contact for Bifacial Polarities

Quasi-omnidirectional crystalline silicon solar cells

Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

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