2016
DOI: 10.1002/pip.2789
|View full text |Cite
|
Sign up to set email alerts
|

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain‐balance technology

Abstract: Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique is presented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The best conditions for obtaining a high photoluminescence response, indicating a good material quality, have been found among a wide range of possibilities. Solar cells with an excellent quantum efficiency have been obtained, with a sub-bandgap photo-response of 0.07 mA/cm per QD lay… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

1
19
0
18

Year Published

2017
2017
2021
2021

Publication Types

Select...
5
1
1

Relationship

0
7

Authors

Journals

citations
Cited by 48 publications
(38 citation statements)
references
References 33 publications
1
19
0
18
Order By: Relevance
“…It can be seen that the deposition of 1 ML InGaAs is not enough to start the formation of coherent islands since the obtained spectrum has a shape close to the quantum well one with two apparent peaks: 870 nm from the GaAs matrix and 900 nm from the wetting layer of the QD. The resulting optimum thickness of 2 ML exceeds the critical thickness for the formation of InAs QDs on the GaAs surface, which is 1.7 ML like it has been shown in [8]. In fact, In 0.8 Ga 0.2 As has a smaller difference in the parameters of the crystal lattices with GaAs so when the QD growth in the Stranski-Krastanov mode the more material is required to begin the formation of the islands.…”
Section: A Growth Peculiarities Of Ingaas Qds On Gaas Surfacementioning
confidence: 70%
See 3 more Smart Citations
“…It can be seen that the deposition of 1 ML InGaAs is not enough to start the formation of coherent islands since the obtained spectrum has a shape close to the quantum well one with two apparent peaks: 870 nm from the GaAs matrix and 900 nm from the wetting layer of the QD. The resulting optimum thickness of 2 ML exceeds the critical thickness for the formation of InAs QDs on the GaAs surface, which is 1.7 ML like it has been shown in [8]. In fact, In 0.8 Ga 0.2 As has a smaller difference in the parameters of the crystal lattices with GaAs so when the QD growth in the Stranski-Krastanov mode the more material is required to begin the formation of the islands.…”
Section: A Growth Peculiarities Of Ingaas Qds On Gaas Surfacementioning
confidence: 70%
“…Currently, QDs widely used in active area of lasers and allow increasing the radiation wavelength, improving thermal stability and reducing the threshold current, compared with traditional devices. However, first successful results of the application QDs in photovoltaic began publishing only recently and demonstrate the expansion of spectral sensitivity of the SC via photoelectric effect in InAs/GaAs QD [6][7][8]. In these works a noticeable but small contribution of QDs to the internal quantum efficiency of single-junction SC has been obtained.…”
Section: Introductionmentioning
confidence: 95%
See 2 more Smart Citations
“…Метаморфные КТ также были использованы для создания источников одиночных фотонов [9][10]. Кроме того, InAs КТ также весьма перспективны для улучшения характеристик фотопреобразователей раз-личного спектрального диапазона [11,12].…”
Section: Introductionunclassified