2017
DOI: 10.1016/j.actamat.2017.07.055
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Indentation size effect and dislocation structure evolution in (001) oriented SrTiO3 Berkovich indentations: HR-EBSD and etch-pit analysis

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Cited by 49 publications
(43 citation statements)
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“…The gradient map of the Raman signal has its strongest intensity between the cross‐shaped {110} planes of high dislocation density (Figure b). The strain gradient is stronger closer to the dislocations and decreases over distances of several microns, in agreement with observations from Javaid et al The SHG signal correlates to the areas between these zones where strain gradients occur . Furthermore, the analysis of SHG images taken in the volume of the sample provides us with a picture of the structure of the dislocation planes.…”
Section: Resultssupporting
confidence: 92%
“…The gradient map of the Raman signal has its strongest intensity between the cross‐shaped {110} planes of high dislocation density (Figure b). The strain gradient is stronger closer to the dislocations and decreases over distances of several microns, in agreement with observations from Javaid et al The SHG signal correlates to the areas between these zones where strain gradients occur . Furthermore, the analysis of SHG images taken in the volume of the sample provides us with a picture of the structure of the dislocation planes.…”
Section: Resultssupporting
confidence: 92%
“…Theoretically, these authors used a gradient plasticity framework in conjunction with a Hall-Petch approach to analyze the deformation curves and to establish criteria for slip transmission across GBs [7]. Zhang 3 et al [8] carried out nanoindentation on copper bicrystals and found that the hardness first increases and then decreases with increasing indentation depth. They pointed out that this phenomenon is related to the interaction between dislocations and GB.…”
Section: Introductionmentioning
confidence: 99%
“…The room and elevated temperature indentations were vibrational polished (Jean-Wirtz GmbH, D€ usseldorf, Germany) using 40 nm colloidal silica suspension (OP-S, Struers A/S, Ballerup, Denmark) to make sure the dislocation etch-pits associated with pileups extend below the surface. Our previous nanoindentation studies 15,16 conducted at room temperature on (001) STO single crystal confirmed that the etch-pits in dislocation pile-up extend well below the surface in half-loop shape along h110i 110 f g systems. However, for elevated temperature STO indentations, this additional polishing step was necessary to make sure that the dislocations etch-pits in pile-ups are not only limited to surface but extend well below the surface in <100> and <110> directions.…”
Section: Methodsmentioning
confidence: 61%
“…Moreover, only slip along the false⟨110false⟩110 system was confirmed in these studies. Certain phenomenon, such as the indentation size effect (ISE), which is more pronounced at very small indentation depths was recently studied for the first time in (001) STO single crystals via direct observation of dislocations using etch‐pit and high resolution electron backscattered diffraction (HR‐EBSD) analysis. The independent measurements of Geometrically Necessary Dislocations (GNDs) gives a profound understanding of the physical basis of the ISE.…”
Section: Introductionmentioning
confidence: 99%
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