Indication of Mixed Conductivity in III-V Semiconductors Using Conductivity, Hall Effect and Magnetoresistance Measurements

Betko, J.; Morvič, M.

doi:10.1002/1521-396x(200009)181:1<169::aid-pssa169>3.0.co;2-8

Cited by 6 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The conductivity mechanism of the samples was found to be single carrier (electron) dominated, due to low values of resistivity (below 4 × 10 8 Ω cm at RT). The mixed conductivity analysis was not needed to calculate the true electron parameters [11]. Resistivity versus total irradiation dose obtained from measurements at 300 K is plotted in figure 6(a).…”

Section: Galvanomagnetic Measurementsmentioning

confidence: 99%

The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

et al. 2016

View full text Add to dashboard Cite

In this work we fabricated detectors based on semi-insulating GaAs and studied their electrical properties (current-voltage characteristics, galvanomagnetic measurements) after irradiation with 5 MeV electrons from a linear accelerator up to a dose of 104 kGy. A series of detectors were prepared using Ti/Pt/Au Schottky contact with 1 mm diameter. The thickness of the base material was about 230 µm. A whole area Ni/AuGe/Au ohmic contact was evaporated on the back side. For galvanomagnetic measurements we used three samples from the same wafer. All samples were irradiated by a pulse beam of 5 MeV electrons using the linear accelerator in 11 steps, where the accumulative dose increased from 1 kGy up to 104 kGy. Also different dose rates (20, 40 and 80 kGy/h) were applied to the samples. After each irradiation step we performed electrical measurement of each sample. We analyze the electron Hall mobility, resistivity, electron Hall concentration, breakdown voltage and reverse current of samples before and after irradiation using different dose rates. K: Radiation damage to detector materials (solid state); Solid state detectors; Materials for solid-state detectors 1Corresponding author.

show abstract

Section: Galvanomagnetic Measurementsmentioning

confidence: 99%

The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs

et al. 2016

View full text Add to dashboard Cite

show abstract

Conductivity, Hall and magnetoresistance effect measurements on SI GaAs and InP

Acar¹,

Kasap

2004

phys. stat. sol. (a)

View full text Add to dashboard Cite

The conductivity, Hall effect and magnetoresistance quantities in semi‐insulating undoped GaAs and Fe‐doped GaAs and InP grown by the LEC technique have been measured in the temperature range 300–420 K. It is shown that mixed conductivity is present in all samples. The experimental data were analyzed using a two‐band model including electron and hole transport. A good fit has been obtained self‐consistently to both conductivity and mobility. The single‐band parameters have been extracted from the measured data in the studied temperature range. From ln (|RH, 0| T3/2) and σ vs T−1 plots, activation energies of 0.77 and 0.65 eV have also been observed for GaAs and InP, respectively. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract