Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

Experimental study of the orientation dependence of indium incorporation in GaInN

“…Although the theoretical work of Durnev et al [19] correctly predicts a maximum in indium concentration at 55 0 to 60 0 tilt from the c-plane towards the m-plane, it fails to predict the minimum around 20 0 . The rapid decrease in indium incorporation for a small increase in tilt angle from the c-plane has been reported earlier by Leszcynski et al [30]. They explained the decrease using a step-flow growth model wherein the volatile indium atoms are captured at step edges.…”

“…However, material quality degradation due to misfit dislocation generation at high indium content [12] shifted the focus to other orientations, since (20)(21) GaN was shown to be capable of incorporating sufficient indium while maintaining the crystalline quality, enabling the demonstration of the first true green GaN based lasers [13]. Other semipolar orientations such as (20-2-1), (30)(31), (30-3-1), etc. have also been proposed [14][15][16].…”

Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy

“…As reported in Ref. [16], indium incorporation is governed by the width of step terrace. The terrace width on the side wall area is much smaller than that on the top of the wavy structure.…”

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

“…36 This picture is further supported by high-resolution atomic force microscopy (AFM) images and near-field PL mappings recorded on a 100-nm-thick InGaN epilayer with an indium content of 8.6 6 0.2% [ Figs. 5(a) and 5(b)].…”

“…This heterogeneity stems from different local misorientations, and hence a position-dependent step-edge density, and the abovementioned ESB that would be responsible for a change in the mean incorporation of indium atoms. 36 This twofold combination seems to be the main contribution to the inhomogeneous broadening of the OA edge for high indium contents. For instance, the random alloy model predicts an OA linewidth of 30 meV around 18% of indium, whereas we measured a value of 85 meV for our pseudomorphic InGaN epilayer.…”