Indium phosphide

Bliss, D.; Fornari, R.

doi:10.1016/b978-0-08-102096-8.00007-0

Cited by 5 publications

(4 citation statements)

References 64 publications

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“…The features of low densities, high thermal conductivities, and wide bandgap, in particular, have made them suitable for applications in optoelectronic devices at high temperatures [3]. An important candidate of the III-phosphides is the InP that owns fascinating electronic and optical properties which make it suitable for applications in high-speed electronics and optoelectronics [4][5][6][7][8]. Due to its good electrical conductivity, InP has found important applications in modern electronic devices and high-speed communications as well [9].…”

Section: Introductionmentioning

confidence: 99%

“…Similarly, it has been widely used in photonic devices such as photodetectors, photodiodes, lasers, amplifiers, quantum photonic devices, photonic integrated circuits, networking, and signal processing, etc. [8]. It exhibits a moderate direct bandgap of magnitude 1.423 eV [10], which makes it suitable for the absorption of IR and VI light.…”

Section: Introductionmentioning

confidence: 99%

“…It exhibits a moderate direct bandgap of magnitude 1.423 eV [10], which makes it suitable for the absorption of IR and VI light. Because of its coinciding lattice parameters with many potential materials suitable for optoelectronic devices, InP is considered as a substrate of choice for the fabrication of resonant interband tunneling diodes and optoelectronic devices [7,8,11].…”

Section: Introductionmentioning

confidence: 99%

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Investigations of the physical behavior of novel polymorphs of indium phosphide from a first-principles perspective

et al. 2021

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Polymorphism has been recognized as a useful tool to govern the behavior of solid materials for different technological applications. In this work, we present new polymorphs of Zinc-Blende (zb) Indium phosphide (InP) in Beryllium Oxide (β-BeO)-, Wurtzite (wz)-, and Silicon Carbide (SiC)-phases and explore their physical behavior from the first-principles perspective. These new polymorphs of InP exhibit hexagonal symmetry where the In 3+ and P 3− atoms exhibit tetrahedral coordination similar to zb-phase. The lack of imaginary frequencies in the phonon dispersions calculated for the novel InP polymorphs indicates their adequate dynamical stability. Moreover, the new polymorphs exhibited the cohesive energy comparable to that of the zb-phase of InP which indicated them thermodynamically as stable as the zb-phase of InP. The zb-polymorph, wz-polymorph, β-BeO-polymorph, and SiCpolymorph of InP exhibited direct bandgaps of magnitude 1.33, 1.32, 1.47, and 1.31 eV, respectively. The optical absorption by these novel polymorphs approaches to ~10 6 cm −1 in the visible (VI) part of the electromagnetic spectrum that are further evolved to 1.50 × 10 6 cm −1 , 1.61 × 10 6 cm −1 , 1.62 × 10 6 cm −1 , and 1.71 × 10 6 cm −1 for zb-polymorph, wzpolymorph, β-BeO-polymorph, and SiC-polymorph of InP respectively in the ultraviolet (UV) range. Such high absorption of light points to their potential photovoltaic applications. They also exhibit transparent nature for infrared (IR), VI, and a wide range of UV light that may find interesting applications in optoelectronics. The phase transition of InP at moderate pressure indicates that novel stable polymorphs of InP with interesting features can be accordingly developed for any desired technological application.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigations of the physical behavior of novel polymorphs of indium phosphide from a first-principles perspective

et al. 2021

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“…Ga 1−x In x Sb crystals have been prepared with Czochralski method (CZ), 6,7) Bridgman method, [8][9][10] Traveling heater method (THM), [11][12][13][14] and vertical directional solidification (VDS) 15) etc. Tsaur 6) et al prepared Ga 1−x In x Sb crystal with CZ technique, which had obvious axial segregation.…”

Section: Introductionmentioning

confidence: 99%

Effect of rotating magnetic field on temperature field and flow field of Ga_1−xIn _x Sb crystal growth with traveling heater method

Zhang

et al. 2020

Jpn. J. Appl. Phys.

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In order to optimize the process parameters and shorten the experimental period, Ga1−xInxSb crystal growth with travelling heating method applied rotating magnetic field (RMF) was simulated. The results show that RMF changed the melt convection pattern, firstly, from a single natural convection cell to two forced convection cells coupled each other, which then became independent of each other, then each of which involved into a couple of sub-convective cells as the RMF field intensity increased. Secondly, RMF significantly increased the convection intensity, and the maximum flow velocity increased about 52 times at the initial stage of crystal growth, and about 16 times in the last stage. Thirdly, RMF decreased the axial temperature gradient in the melting zone by 10% above, and decreased the radial temperature gradient about 25% at the same time. And RMF reduced the deflection of crystal growth interface about 21%–23% during the crystal growth.

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Tunable Enhanced Second‐Harmonic Generation in InP‐InAsP Quantum Well Nanomembranes

Su,

Yan,

Wang

et al. 2024

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Second‐harmonic generation (SHG) offers a convenient approach for infrared‐to‐visible light conversion in tunable nanoscale light sources and optical communication. Semiconductor nanostructures offer rich possibilities to tailor their nonlinear optical properties. In this study, strong second‐harmonic generation in InP nanomembranes with InAsP quantum well (QW) is demonstrated. Compared with bulk InP, up to 100 times enhancement of SHG is achieved in the short‐wave infrared range. This enhancement is shown to be predominantly induced by the resonance‐enhanced absorption and quantum confinement of fundamental wavelengths in the InAsP QW. The thin nanomembrane structure will also provide nanocavity enhancement for second‐harmonic wavelengths. The enhanced SHG peak wavelengths can also be tuned by changing the QW composition. These findings provide an effective strategy for enhancing and manipulating the second‐harmonic generation in semiconductor quantum‐confined nanostructures for on‐chip all‐optical applications.

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Indium phosphide

Cited by 5 publications

References 64 publications

Investigations of the physical behavior of novel polymorphs of indium phosphide from a first-principles perspective

Investigations of the physical behavior of novel polymorphs of indium phosphide from a first-principles perspective

Effect of rotating magnetic field on temperature field and flow field of Ga_1−xIn _x Sb crystal growth with traveling heater method

Tunable Enhanced Second‐Harmonic Generation in InP‐InAsP Quantum Well Nanomembranes

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Indium phosphide

Cited by 5 publications

References 64 publications

Investigations of the physical behavior of novel polymorphs of indium phosphide from a first-principles perspective

Investigations of the physical behavior of novel polymorphs of indium phosphide from a first-principles perspective

Effect of rotating magnetic field on temperature field and flow field of Ga1−x In x Sb crystal growth with traveling heater method

Tunable Enhanced Second‐Harmonic Generation in InP‐InAsP Quantum Well Nanomembranes

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Effect of rotating magnetic field on temperature field and flow field of Ga_1−xIn _x Sb crystal growth with traveling heater method