Indium-zinc-oxide electric-double-layer thin-film transistors gated by silane coupling agents 3-triethoxysilylpropylamine–graphene oxide solid electrolyte

Huang, Yu-Kai; Shi, Yangyang; Cheng, Guanggui; Ding, Jianning

doi:10.1088/0022-3727/48/28/285103

Cited by 15 publications

(13 citation statements)

References 18 publications

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“…The Ta2O5 based solid electrolyte devices shows greater promise compared to other technologies in terms of delivering a higher stable specific capacitance up to 15 µF/cm 2 with no reduction at higher applied biases and the diffusion controlled mechanism in our devices delivers highest normalized transconductance compared to other solid EDLFETs reported in literature. 41,53,64,67 . The main performance parameters are summarized in The reversible charge storage of these three terminal devices are predicted to have greater advantages in non-volatile memory and neuromorphic applications than memristor based two terminal devices.…”

Section: Resultsmentioning

confidence: 99%

Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors

Pillai

Kumar

Song

et al. 2018

ACS Appl. Mater. Interfaces

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An electrochemical device capable of manifesting reversible charge storage at the interface of an active layer offers formidable advantages, such as low switching energy and long retention time, in realizing synaptic behavior for ultralow power neuromorphic systems. Contrary to a supercapacitor-based field-effect device that is prone to low memory retention due to fast discharge, a solid electrolyte-gated ZnO thin-film device exhibiting a battery-controlled charge storage mechanism via mobile charges at its interface with tantalum oxide is demonstrated. Analysis via cyclic voltammetry and chronoamperometry uniquely distinguishes the battery behavior of these devices, with an electromotive force generated due to polarization of charges strongly dependent on the scan rate of the applied voltage. The Faradaic-type diffusion-controlled charge storage mechanism exhibited by these devices is capable of delivering robust enhancement in the channel conductance and leads to a superior ON-OFF ratio of 10-10. The nonvolatile behavior of the interface charge storage and slow diffusion of ions is utilized in efficiently emulating spike timing-dependent plasticity (STDP) at similar time scales of biological synapses and unveils the possibility of STDP behavior using multiple in-plane gates that alleviate additional requirement of waveform-shaping circuits.

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Section: Resultsmentioning

confidence: 99%

Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors

Pillai

Kumar

Song

et al. 2018

ACS Appl. Mater. Interfaces

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“…The most common classes of electrolyte materials consist of ionic liquids, ion-gels, polyelectrolytes, and polymer electrolytes. − Recently, polysaccharides, solid-state electrolytes, aqueous salts, and even water have been demonstrated as effective gate dielectrics. − Figure illustrates the ionic conductivities of common electrolytes. Unlike the inorganic and polymer dielectrics, the capacitance of these electrolytes is determined by the formation of the EDL, e.g., the electrolyte types, not the physical thickness of the electrolyte layer .…”

Section: High-k Dielectric Materialsmentioning

confidence: 99%

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

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Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

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“…42 KH550 modification normally produces characteristic absorption of Si−O stretching vibrations at 1080 cm −1 . 43 Unfortunately, the absorption peaks of Si−O groups are not obvious here due to their chemical shift to the lower wavenumbers after silane hydroxylation on the surface of Fe 3 O 4 , 44 as well as the overlap with −CF 2 stretching peaks of PVDF-HFP at 1062 cm −1 . Besides, peaks present around 3200 and 3300 cm −1 assigned to amino (−NH 2 ) vibrations for composite membranes also indicate that silane coupling agents are linked to the surface of Fe 3 O 4 NPs.…”

Section: ■ Results and Discussionmentioning

confidence: 66%

Highly Tunable Piezoelectricity of Flexible Nanogenerators Based on 3D Porously Architectured Membranes for Versatile Energy Harvesting and Self-Powered Multistimulus Sensing

Lian

Cheng

et al. 2021

ACS Sustainable Chem. Eng.

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The development of inherently flexible nanogenerators that can effectively convert various environmental resources (pressure, magnetism, solvents, etc.) into electricity is highly desirable for developing sustainable energy. Herein, we demonstrate a flexible piezoelectric nanogenerator with highly tunable piezoelectricity, high sensitivity, and multistimulus sensing capability based on the 3D porous architecture of the poly-(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) nanocomposite membrane featured by interconnected networkinterfaced magnetic Fe 3 O 4 nanoparticles. Fe 3 O 4 nanoparticles are incorporated to endow the nanogenerator with responsiveness to magnetism. The porous membrane is fabricated by a scalable, template-free, nonsolvent-induced phase-separation approach. By modulating the liquid−liquid demixing separation and nanoparticle migration, pore sizes of the spongy network are effectively tuned over a wide range, by which the porosity, flexibility, and electroactive crystal growth are significantly enhanced. Consequently, the device produces an enhanced piezoelectricity with a superior piezoelectric coefficient d 33 of 48.6 pC/N, a sensitivity of 294 mV/N, a power density of 5.3 μW/cm 3 , and stable electricity-generating performance over 10,000 repetitions. Significant enhancements over the pristine nonporous control are attributed to the facilitated structural deformation, localized stress concentration, and the electroactive crystal promotion. More intriguingly, beyond the response to the contact pressure, the nanogenerator can also yield continuous electric power in response to the magnetic field and organic solvent vapor due to the actuation-driven piezoelectric effects. The versatile nanogenerator with multiple responsiveness permits the self-powered smart sensing of various ambient stimuli and the simultaneous harvesting of the associated energies in both contact and noncontact working modes. This study demonstrates the substantial potential of multistimulus-responsive, porously architectured membrane-based piezoelectric nanogenerators in multifunctional, contactless, and efficient energy harvesting and sensing for wearable and portable electronics.

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Indium-zinc-oxide electric-double-layer thin-film transistors gated by silane coupling agents 3-triethoxysilylpropylamine–graphene oxide solid electrolyte

Cited by 15 publications

References 18 publications

Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors

Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

Highly Tunable Piezoelectricity of Flexible Nanogenerators Based on 3D Porously Architectured Membranes for Versatile Energy Harvesting and Self-Powered Multistimulus Sensing

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