Individual Ohmic contacted ZnO/Zn2SnO4 radial heterostructured nanowires as photodetectors with a broad-spectral-response: injection of electrons into/from interface states

Cheng, Baochang; Xu, Jian; Ouyang, Zhiyong; Su, Xuantao; Xiao, Yanhe; Lei, Shuijin

doi:10.1039/c3tc32059f

Cited by 33 publications

(28 citation statements)

References 49 publications

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“…In this work, we report for the first time a flexible UV–vis–NIR image sensor based on SnS QDs decorated ZTO NW photodetector array. Owing to high electron mobility, fascinating optical properties, high earth abundance, and environmentally benign nature, n‐type ZTO NWs (direct E g ≈ 3.6 eV) were widely used in UV photodetectors . However, narrow spectral response range because of their inherent bandgap and relatively low photoconductive gain greatly limit their practical application field, particularly for broadband photodetection field .…”

Section: Introductionmentioning

confidence: 99%

“…Owing to high electron mobility, fascinating optical properties, high earth abundance, and environmentally benign nature, n‐type ZTO NWs (direct E g ≈ 3.6 eV) were widely used in UV photodetectors . However, narrow spectral response range because of their inherent bandgap and relatively low photoconductive gain greatly limit their practical application field, particularly for broadband photodetection field . To expand the spectral response range and increase the photoconductive gain of ZTO NWs, p‐type SnS QDs were decorated directly on the surface of ZTO NWs via a facile vapor deposition method .…”

Section: Introductionmentioning

confidence: 99%

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Flexible Broadband Image Sensors with SnS Quantum Dots/Zn₂SnO₄ Nanowires Hybrid Nanostructures

Lou

Shen

2017

Adv Funct Materials

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Broadband image sensors are widely studied and applied in many fields. However, developing high-performance flexible broadband imaging is still a great challenge that needs to be overcome. This study demonstrates a flexible broadband image sensor with SnS quantum dots (QDs)/Zn 2 SnO 4 (ZTO) nanowires (NWs) hybrid nanostructures as the sensing elements, which is prepared by decorating ZTO NWs with SnS QDs via a two-step vapor deposition method. Compared with pristine ZTO NWs, the hybrid QDs/NWs exhibit much higher photoconductive gain and specific detectivity in UV region and extended photoresponse ranging from UV to NIR region. In addition, individual hybrid QDs/NW photodetector built on polyethylene terephthalate substrate shows an excellent flexibility, mechanical stability, folding endurance, and long-term stability. Integrated into a 10 × 10 array, a flexible broadband image sensor is fabricated. Under bending states, the flexible image sensor can still identify clearly the target images composed of white light and red light, revealing the outstanding target identification ability. The superior performance of the devices indicates that the QDs/NWs hybrid nanostructures have a tremendous application potential in future flexible broadband imaging technology.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn₂SnO₄ Nanowires Hybrid Nanostructures

Lou

Shen

2017

Adv Funct Materials

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“…This ternary semiconductor compound is a promising material for application in photocatalysts and gas sensors. 13,14 Due to the similar band alignment feature of the ZnO-SnO 2 and ZnO-ZTO heterostructures, 15,16 these two types of heterostructures are suitable targets for investigating and understanding the physical mechanisms of shell-layer microstructural modications in the photocatalytic activity and gas-sensing sensitivity of 1D core-shell composites.…”

Section: 12mentioning

confidence: 99%

“…8). 15,16 Under light irradiation, the electrons (e À ) in the valence band are excited to the conduction band, with simultaneous generation of the same amount of holes (h + ) in the valance band. Because the conduction band of SnO 2 (or ZTO) is lower than that of ZnO, the photoexcited electrons will transfer from the conduction band of ZnO to that of SnO 2 (or ZTO).…”

mentioning

confidence: 99%

High-temperature solid-state reaction induced structure modifications and associated photoactivity and gas-sensing performance of binary oxide one-dimensional composite system

Liang

2017

RSC Adv.

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The effects of high-temperature solid-state reactions on the microstructures, optical properties, photoactivity, and low-concentration NO 2 gas-sensing sensitivity of ZnO-SnO 2 core-shell nanorods were investigated. In this study, the ZnO-SnO 2 core-shell nanorods were synthesized through a combination of the hydrothermal method and vacuum sputtering. According to X-ray diffraction and transmission electron microscopy analyses, high-temperature solid-state reactions between the SnO 2 shell and ZnO core materials at 900 C engendered an ultrathin SnO 2 shell layer for transforming into the ternary Zn 2 SnO 4 (ZTO) phase. Moreover, surface roughening was involved in the high-temperature solidstate reactions, as determined from electron microscopy images. Comparatively, the ZnO-ZTO nanorods have a higher oxygen vacancy density near the nanostructure surfaces than do the ZnO-SnO 2 nanorods.The photodegradation of rhodamine B dyes under simulated solar light irradiation in presence of the ZnO-SnO 2 and ZnO-ZTO nanorods revealed that the ZnO-ZTO nanorods have a higher photocatalytic activity than do the ZnO-SnO 2 nanorods. Furthermore, the ZnO-ZTO nanorods exhibited higher gassensing sensitivity than did the ZnO-SnO 2 nanorods on exposure to low-concentration NO 2 gases. The substantial differences in the microstructure and optical properties between the ZnO-SnO 2 and ZnO-ZTO nanorods accounted for the photocatalytic activity and NO 2 gas-sensing results obtained in this study.

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“…22,25 Therefore, widebandgap ZTO semiconductors (E g > 3.1 eV) have high potential for the detection of UV radiation. UV photodetectors based on Zn 2 SnO 4 nanocube film, 25 individual ZnO-Zn 2 SnO 4 radial heterostructured nanowire, 27 and amorphous zinc-tin oxide thin film 28 was used for spectroscopic response measurements. 25,26 Only very limited studies have been conducted on ZTO and/or its composite based UV photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Tunable UV response and high performance of zinc stannate nanoparticle film photodetectors

et al. 2016

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High-performance photodetectors are costly due to either the expensive nature of active materials or sophistication in fabrication process required to meet performance targets. In this work, low-cost metal stannate based nanostructures are demonstrated as active materials for high-performance UV photodetectors. A robust, inexpensive, and scalable drop-casting process was successfully developed to fabricate thin film devices composed of amorphous ZnSnO 3 nanocubes and/or polycrystalline Zn 2 SnO 4 -SnO 2 nanoparticles with different optical and electronic structures. Moreover, the Zn 2 SnO 4 -SnO 2 heterojunction nanoparticles were directly obtained by thermal treatment of amorphous ZnSnO 3 nanocubes. Large-area, uniform, and continuous film photodetectors were achieved with pronounced and fast response upon exposure to UV illuminations (λ < 370 nm), showing both rise and decay time less than 1.0 s. More advantages based on these two stannate nanostructures were observed compared with their counterparts, such as ZnO, SnO 2 , Zn 2 SnO 4 , ZnO-SnO 2 individual nanostructure or film photosensors, including high photo-sensitivities (S > 10 2 and ~ 10 3 were achieved for ZnSnO 3 and Zn 2 SnO 4 -SnO 2 photodetectors, respectively) and excellent responsivity (as high as 0.5 A/W at 5.0 V bias from the Zn 2 SnO 4 -SnO 2 photosensors) under low light intensity. This work provides a simple, cost-effective and tunable processing strategy to synthesize and apply earth-abundant metal stannate based nanomaterials for high performance UV photodetectors and other optoelectronic devices.

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Individual Ohmic contacted ZnO/Zn2SnO4 radial heterostructured nanowires as photodetectors with a broad-spectral-response: injection of electrons into/from interface states

Cited by 33 publications

References 49 publications

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn₂SnO₄ Nanowires Hybrid Nanostructures

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn₂SnO₄ Nanowires Hybrid Nanostructures

High-temperature solid-state reaction induced structure modifications and associated photoactivity and gas-sensing performance of binary oxide one-dimensional composite system

Tunable UV response and high performance of zinc stannate nanoparticle film photodetectors

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Individual Ohmic contacted ZnO/Zn2SnO4 radial heterostructured nanowires as photodetectors with a broad-spectral-response: injection of electrons into/from interface states

Cited by 33 publications

References 49 publications

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn2SnO4 Nanowires Hybrid Nanostructures

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn2SnO4 Nanowires Hybrid Nanostructures

High-temperature solid-state reaction induced structure modifications and associated photoactivity and gas-sensing performance of binary oxide one-dimensional composite system

Tunable UV response and high performance of zinc stannate nanoparticle film photodetectors

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Flexible Broadband Image Sensors with SnS Quantum Dots/Zn₂SnO₄ Nanowires Hybrid Nanostructures

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn₂SnO₄ Nanowires Hybrid Nanostructures