Inducing tunable switching behavior in a single memristor

Ahmed, Taimur; Walia, Sumeet; Mayes, Edwin; Ramanathan, Rajesh; Guagliardo, Paul; Bansal, Vipul; Bhaskaran, Madhu; Yang, J. Joshua; Sriram, Sharath

doi:10.1016/j.apmt.2018.03.003

Cited by 24 publications

(31 citation statements)

References 74 publications

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“…α ‐STO of 55 nm thickness was deposited by radio frequency (RF) sputtering (Kurt J. Lesker PVD75 sputtering system) in 100% Ar atmosphere at a process pressure of 3.5 × 10 −7 Torr at room temperature from a commercial ceramic STO target (99.95%, Testbourne Ltd) using 200 W RF (13.54 MHz). [ 39,40 ] The bottom Pt (25 nm) on Ti (7 nm) and top Pt (100 nm) on Ti (10 nm) were deposited at a rate of 0.3 Å s −1 by electron beam evaporation.…”

Section: Methodsmentioning

confidence: 99%

Artificial Somatosensors: Feedback Receptors for Electronic Skins

Rahman

Walia

Naznee

et al. 2020

Advanced Intelligent Systems

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The human skin is the largest sensory organ, made up of complex sensors that detect noxious stimuli to rapidly send warning signals to the central nervous system to initiate a motor response. It is complex to mimic key skin features using existing tactile sensors, and there exists no somatosensor that responds to real stimuli of pressure, temperature, and touch. Herein, three critical skin receptors created by realizing integrated electronic systems that mimic the feedback response of somatosensors are experimentally demonstrated. Fully functional Pacinian corpuscles, thermoreceptors, and nociceptors are realized using a combination of stretchable pressure sensors, phase‐change oxide thin films, and threshold‐based resistive switching (memristor) memory elements. The ability to detect and respond to pressure, temperature, and pain stimuli above a threshold with real‐life performance characteristics is demonstrated with explanation of underlying mechanisms. The ability to design and realize artificial skin receptors enables replacement of affected human skin regions, augment skin sensitivity for agile applications in defense and sports, and drive advancements in intelligent robotics.

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Section: Methodsmentioning

confidence: 99%

Artificial Somatosensors: Feedback Receptors for Electronic Skins

Rahman

Walia

Naznee

et al. 2020

Advanced Intelligent Systems

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“…For this reason, a few recent studies demonstrated TS based on amorphous vanadium oxide ( a ‐VO x ). However, due to the amorphous nature of the film, devices based on same stoichiometry of vanadium oxide show multifunctional memory behavior, which is not desirable for the practical application.…”

Section: Introductionmentioning

confidence: 99%

“…Crystalline VO 2 (c-VO 2 ) as TS element shows significant OFF-current, [12,13] which defeats its primary purpose as a selector. However, due to the amorphous nature of the film, devices based on same stoichiometry of vanadium oxide show multifunctional memory behavior, [17] which is not desirable for the practical application. However, due to the amorphous nature of the film, devices based on same stoichiometry of vanadium oxide show multifunctional memory behavior, [17] which is not desirable for the practical application.…”

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confidence: 99%

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Nirantar

Mayes

Rahman

et al. 2019

Adv Elect Materials

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structure due to its ability to be designed in high capacity 3D crossbar arrays. [1] The major disadvantage of 3D crossbars currently is the high-leakage or sneak-path current. [2] Complex class of vanadium oxide spans a broad range of 20 phases. [3] Depending on the stoichiometry, crystal structure, and device structure it has demonstrated bipolar resistive switching (BRS) [4][5][6][7][8][9][10] as well as apolar threshold switching (TS). [11][12][13] Apolar TS property in the above papers is desirable as a selector element in crossbar arrays to reduce the sneak-path current (which disrupts stored data). Crystalline VO 2 (c-VO 2 ) as TS element shows significant OFF-current, [12,13] which defeats its primary purpose as a selector. For this reason, a few recent studies [10,[14][15][16] demonstrated TS based on amorphous vanadium oxide (a-VO x ). However, due to the amorphous nature of the film, devices based on same stoichiometry of vanadium oxide show multifunctional memory behavior, [17] which is not desirable for the practical application. This variability highlights that nanostructural investigations are needed to understand the origins of different memory behaviors, in particular the reasons for observing volatile and apolar TS in a-VO x films for its practical utilization as a selector element. Further, in-depth electrical characterization is required to ascertain the electrical conditions for the occurrence of volatile or non-volatile switching in the single device.Here, we present asymmetric cross-point device (Pt/Ti/a-VO x /Pt) with ≈100 nm a-VO x film as a functional switching layer which shows multifunctional behavior in a single device. We further introduce a fabrication procedure (Section S1, Supporting Information) to incorporate a-VO x in crossbar architecture, which has been found to dissolve in water. We choose amorphous films because crystalline films are porous due to grain boundaries and pin-holes, [11] which is unsuitable for stacked architectures. Through X-ray photoelectron spectroscopy (XPS) we analyze the stoichiometry of as-deposited film which revealed the mixed-phased oxidation, including V 3+ , V 4+ , and V 5+ (corresponding to V 2 O 3 , VO 2 , and V 2 O 5 , respectively).

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“…The Cr: a -STO x based memory cells are fabricated in metal-insulator-metal (MIM) configuration by following the fabrication steps in Ref. [1] , [2] , [5] . In the MIM structure Pt (35 nm)/Ti (8 nm) serves as a top metal electrode, Cr: a -STO x (25 nm) as an insulator and Pt (7 nm)/Ti (3 nm) as a bottom metal electrode.…”

Section: Experimental Design Materials and Methodsmentioning

confidence: 99%

“… The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1] . Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out.…”

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confidence: 99%

Data related to the nanoscale structural and compositional evolution in resistance change memories

et al. 2018

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The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.

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Inducing tunable switching behavior in a single memristor

Cited by 24 publications

References 74 publications

Artificial Somatosensors: Feedback Receptors for Electronic Skins

Artificial Somatosensors: Feedback Receptors for Electronic Skins

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars

Data related to the nanoscale structural and compositional evolution in resistance change memories

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Inducing tunable switching behavior in a single memristor

Cited by 24 publications

References 74 publications

Artificial Somatosensors: Feedback Receptors for Electronic Skins

Artificial Somatosensors: Feedback Receptors for Electronic Skins

In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VOx Asymmetric Crossbars

Data related to the nanoscale structural and compositional evolution in resistance change memories

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In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO_x Asymmetric Crossbars