Inductively-coupled plasma-enhanced chemical vapour deposition of hydrogenated amorphous silicon carbide thin films for MEMS

Frischmuth, Tobias; Schneider, Michael; Maurer, Daniel; Grille, Thomas; Schmid, Ulrich

doi:10.1016/j.sna.2016.05.042

Cited by 25 publications

(13 citation statements)

References 36 publications

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“…As alternate to the polyimide foil a thin film of silicon carbide with suffcient thermal conductivity [27], hardness [28] and chemical resistance (i.e. water vapor resistance see [29]) seems promising.…”

Section: Discussionmentioning

confidence: 99%

Waterproof sensor system for simultaneous pressure and hot-film flow measurements

Schwerter

Leester-Schädel

Dietzel

2017

Sensors and Actuators A: Physical

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For simultaneous measurement of pressure and near surface flow conditions allowing indirect determination of wall shear stress in experimental water tunnel environment an integrated hybrid sensor system has been developed. In contrast to known approaches, which are limited to the use in gas atmosphere due to protruding electrical and fragile parts, our sensor system is waterproof shielded and embedded in epoxy resin. Furthermore an amplification circuit for the pressure signal based on a programmable gain amplifier is integrated in direct vicinity to the pressure sensor in order to minimize noise by electromagnetic disturbances. Also sensor systems with on-board digitalization of the pressure signal for direct digital read-out were realized. We present all aspects of system assembly and embedding to one waterproof module. Furthermore, read-out strategies as well as sensor test results in air and water are shown and watertightness is confirmed.

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Section: Discussionmentioning

confidence: 99%

Waterproof sensor system for simultaneous pressure and hot-film flow measurements

Schwerter

Leester-Schädel

Dietzel

2017

Sensors and Actuators A: Physical

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“…These were cut into cuboidal samples using a diamond blade fitted on the Accutom 5 machine. Two sets of specimens were cut, with a nominal dimension of 3×3×6 mm 3 and 6×6×4 mm 3 for quasi-static and dynamic (SHPB) compression tests, respectively. The size of the specimen was decided based on the work of [19] where similar dimension (2×2×3 mm 3 ) was used.…”

Section: Experimental Details 21 Materials and Specimenmentioning

confidence: 99%

“…It also possesses high thermal shock resistance, low thermal expansion and high thermal conductivity. Consequently, it is widely used in microelectromechanical systems (MEMS) [1][2][3], turbine engine components [4], automobile brakes [5], bulletproof armour [6,7], cutting tools and abrasives [8] which require high durability and strength. Extensive efforts have been made to explore the mechanical properties of SiC and further promote its applications.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Behavior of Silicon Carbide Under Static and Dynamic Compression

Zhang

Zhao

Roy

2018

Journal of Engineering Materials and Technology

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This paper compared the mechanical behavior of 6H SiC under quasi-static and dynamic compression. Rectangle specimens with a dimension of 3 × 3 × 6 mm3 were used for quasi-static compression tests under three different loading rates (i.e., 10−5/s, 10−4/s, and 10−3/s). Stress–strain response showed purely brittle behavior of the material which was further confirmed by scanning electron microscopy (SEM)/transmission electron microscopy (TEM) examinations of fractured fragments. For dynamic compression, split Hopkinson pressure bar (SHPB) tests were carried out for cubic specimens with a dimension of 6 × 6 × 4 mm3. Stress–strain curves confirmed the occurrence of plastic deformation under dynamic compression, and dislocations were identified from TEM studies of fractured pieces. Furthermore, JH2 model was used to simulate SHPB tests, with parameters calibrated against the experimental results. The model was subsequently used to predict strength and plasticity-related damage under various dynamic loading conditions. This study concluded that, under high loading rate, silicon carbide (SiC) can deform plastically as evidenced by the development of nonlinear stress–strain response and also the evolution of dislocations. These findings can be explored to control the brittle behavior of SiC and benefit end users in relevant industries.

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“…Many works reported on deposition of silicon dioxide (SiO 2 ), silicon nitride, silicon, and silicon carbide materials for passivation layers, MEMS, and solar cell applications. However, to our knowledge, only a few studies have reported on the use of ICP‐CVD silicon‐based thin films for electronic applications …”

Section: Introductionmentioning

confidence: 99%

Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

Yang

Sagazan

Pichon

et al. 2020

Physica Status Solidi (a)

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Herein, an inductively coupled plasma chemical vapor deposition (CVD) (ICP‐CVD) technique is adopted for deposition of silicon dioxide and silicon thin films to fabricate metal–oxide–semiconductor (MOS) capacitors and thin film transistors (TFTs). Prior to the fabrication and characterization of the TFTs, C–V measurements and breakdown tests are conducted on MOS capacitors based on silicon dioxide deposited under temperatures as low as 20 °C. The breakdown field of 9 MV cm−1 is validated afterward, which implies the good electrical insulating property for acting as a gate insulator and the feasibility of the TFTs. After going through forming gas and thermal annealing with the highest temperature of 220 °C, the TFTs yield good gate insulating properties, a threshold voltage of 3.7 V, an on/off ratio of 6.4 × 102, field effect mobility of 1.2 cm2 (V s)−1, and a subthreshold slope of 3.9 V dec−1. They show promising electrical properties under such a low‐temperature fabrication process using ICP‐CVD technique compatible for silicon electronics using low‐cost flexible substrates.

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Inductively-coupled plasma-enhanced chemical vapour deposition of hydrogenated amorphous silicon carbide thin films for MEMS

Cited by 25 publications

References 36 publications

Waterproof sensor system for simultaneous pressure and hot-film flow measurements

Waterproof sensor system for simultaneous pressure and hot-film flow measurements

Mechanical Behavior of Silicon Carbide Under Static and Dynamic Compression

Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

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