1999
DOI: 10.1063/1.873250
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Inductively coupled plasma heating in a weakly magnetized plasma

Abstract: A one-dimensional analysis of electron heating process in a weakly magnetized, inductively coupled plasma (MICP) is presented. It is found that the main difference in the heating process of a MICP from that of a usual unmagnetized ICP is in that circularly polarized wave modes can exist in the plasma. The right handed circularly polarized wave (R-wave) can propagate into the plasma and its amplitude can be enhanced by cavity resonance effect at an appropriate chamber length and external magnetic field strength… Show more

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Cited by 37 publications
(14 citation statements)
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“…Another way to estimate the nonlocal to local transition is by using the nonlocal parameter which is investigated by Kim et al 39 In Ref. 39, the nonlocal parameter is presented as…”
Section: Resultsmentioning
confidence: 99%
“…Another way to estimate the nonlocal to local transition is by using the nonlocal parameter which is investigated by Kim et al 39 In Ref. 39, the nonlocal parameter is presented as…”
Section: Resultsmentioning
confidence: 99%
“…However, the application of external magnetic field changes the electrodynamics of the plasma. [13][14][15][16][17][18] In the presence of an external static magnetic field perpendicular to the plasma boundary, a plane polarized wave splits into left polarized/ handed ͑+͒ and right polarized/handed waves. As far as driving frequency is concerned magnetized plasma has two regions called skin ͑ Ͼ ͉⍀ e ͉͒ and wave effect dominant ͑ Ͻ ͉⍀ e ͉͒ regions.…”
Section: Introductionmentioning
confidence: 99%
“…In the wave effect dominant region there is a wave penetration into the plasma. [14][15][16][17] Depending on the plasma parameters and operating conditions the plasma can exhibit local or nonlocal behavior. For very low pressure both unmagnetized ICP discharges and magnetized ICP ͑MICP͒ discharges exhibit nonlocal behavior.…”
Section: Introductionmentioning
confidence: 99%
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“…Inductively coupled plasma (ICP) sources are widely used in semiconductor fabrication processing because they allow high density plasma with good uniformity to be easily obtained under low pressure without the need for an external magnetic field [1][2][3][4][5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%