Inelastic light scattering studies of silicon chemical vapor deposition (CVD) systems

Sedgwick, T. O.; Smith, J. E.; Ghez, R.; Cowher, M. E.

doi:10.1016/0022-0248(75)90140-2

Cited by 59 publications

(17 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to measure the chemical species in the gas phase without inducing any unfavorable influence [23] on the gas flow and the chemical reaction at and above the silicon substrate, part of the exhaust gas from the reactor was fed to the quadrupole mass (QMS) analyzer (Microvision, Spectra International LLC), as shown in Fig. 1, similar to our previous study [7].…”

Section: Methodsmentioning

confidence: 99%

Dominant rate process of silicon surface etching by hydrogen chloride gas

et al. 2005

View full text Add to dashboard Cite

Silicon surface etching and its dominant rate process are studied using hydrogen chloride gas in a wide concentration range of 1 -100% in ambient hydrogen at atmospheric pressure in a temperature range of 1023 -1423 K, linked with the numerical calculation accounting for the transport phenomena and the surface chemical reaction in the entire reactor. The etch rate, the gaseous products and the surface morphology are experimentally evaluated. The dominant rate equation accounting for the first-order successive reactions at silicon surface by hydrogen chloride gas is shown to be valid. The activation energy of the dominant surface process is evaluated to be 1.5 Â 10 5 J mol À 1 . The silicon deposition by the gaseous by-product, trichlorosilane, is shown to have a negligible influence on the silicon etch rate. D

show abstract

Section: Methodsmentioning

confidence: 99%

Dominant rate process of silicon surface etching by hydrogen chloride gas

et al. 2005

View full text Add to dashboard Cite

show abstract

“…Based on the result of such studies, gas phase transport phenomena can be evaluated in detail. Sedgwick et al (20) used a noncontact measurement method to determine temperature profiles in a reactor deposition zone using pure hydrogen as a gas medium. Comparison of their experimental data with theoretical temperature profiles in corresponding regions of the deposition zone is shown in Fig.…”

Section: Process Considerationsmentioning

confidence: 99%

“…V= --0 V~ = 0 [20] I N OP P --Pm+ ~y dy T = TH (Y) [22] The first boundary condition in Eq. [21] represents a strongly nonlinear condition determining reagent concentration in the gas phase at the deposition surface.…”

Section: Owl D W Ot Pd -~ + T Oxmentioning

confidence: 99%

“…This boundary condition corresponds to the demand of equality of reaction rate and diffusion flow from the gas phase at the deposition surface. After solving the system of partial differential equations [15]- [19] for the appropriate boundary conditions [20]- [22], the distribution of the silicon deposition rate along the reactor deposition zone can be determined from the relation…”

Section: Owl D W Ot Pd -~ + T Oxmentioning

confidence: 99%

See 1 more Smart Citation

Phenomenological Model of the CVD Epitaxial Reactor

Juåza

Čermák

1982

J. Electrochem. Soc.

View full text Add to dashboard Cite

A model of the epitaxial chemical vapor deposition reactor has been developed based on fundamental physicochemical principles. The kinetics of the heterogeneous deposition reaction is taken into account along with transport phenomena occurring in the gas phase above the deposition surface. The obtained set of partial differential equations is solved numerically, the results being compared with a representative set of experimental data and with previously published models. The comparison demonstrates the suitability of the model conception as well as its applicability for process design purposes. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.48.29.181 Downloaded on 2014-11-04 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.48.29.181 Downloaded on 2014-11-04 to IP

show abstract

“…[1±5,7,19,29,36] In both cases hot-wall [1±5,7±9,12,13,19,29,34,36] or cold-wall reactors [21] were used. The gas phase composition was determined using in-situ FTIR [30±33] and Raman spectroscopy, [37] as well as gas chromatography [1±6] and mass spectrometry. [21] A few studies have been concerned with modeling the gas phase composition based on thermodynamics [8,9,27,28] or kinetics of elementary reactions.…”

Section: Introductionmentioning

confidence: 99%

CVD of SiC from Methyltrichlorosilane. Part I: Deposition Rates

Zhang

Hüttinger²

2001

Chem. Vap. Deposition

View full text Add to dashboard Cite

The CVD of silicon carbide from methyltrichlorosilane (MTS) was studied at various surface area/volume ratios, using an MTS/H 2 mixture of 1:4. The total pressure was 90 kPa; the temperature was varied from 800 C to 1100 C at residence times of 0.9 s and 0.4 s. Steady-state deposition rates were determined as a function of reactor length. The deposition rate as a function of temperature, investigated at a low surface area/volume ratio, shows strong and weak intermediate maxima at temperatures of about 900 C and 1025 C, respectively. These maxima decrease at increasing surface area/volume ratio, leading to a continuous increase of the deposition rate at a sufficiently high surface area/volume ratio. A chemical model based on analyses of the deposits and the gas phase compositions is presented in Part II.

show abstract

Inelastic light scattering studies of silicon chemical vapor deposition (CVD) systems

Cited by 59 publications

References 25 publications

Dominant rate process of silicon surface etching by hydrogen chloride gas

Dominant rate process of silicon surface etching by hydrogen chloride gas

Phenomenological Model of the CVD Epitaxial Reactor

CVD of SiC from Methyltrichlorosilane. Part I: Deposition Rates

Contact Info

Product

Resources

About