Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2H

Maruno, Shigemitsu; Iwasaki, Hiroshi; Horioka, Keiji; Li, Sung-Te; Nakamura, Shōgo

doi:10.1143/jjap.21.l263

Cited by 23 publications

(2 citation statements)

References 9 publications

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“…The chemisorption of hydrogen on Si-(100)-2 X 1 has been investigated by EELS, AES, and TD (565). Hydrogen-adsorbed Si(100)-1 X 1 surfaces have been probed by ISS with the conclusion that the surface is relaxed inward over a distance of approximately 0.08 A or about 6% of the interplanar distance (920), and hydrogen-adsorbed Si(001)-1 X 1 and -2X1 surfaces have been studied by inelastic LEED (587). SIMS was used to obtain profiles of hydrogen, carbon, nitrogen, and oxygen absorbed into evaporated amorphous silicon films after air exposure (570).…”

Section: Semiconductorsmentioning

confidence: 99%

Forensic science

Brettell¹,

Saferstein²

1983

Anal. Chem.

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He Joined the company in 1959 as a radiochemist. His current work is directed toward developing advanced techniques for semiconductor materials characterization using electron beam (scanning Auger) and in microprobe techniques for chemical imperfections. X-ray topography, and scanning transmission electron microscopy techniques for physical imperfections. Larrabee earned a B.Sc. from the University ol Bishop's College In Quebec and an M.Sc. in chemistry from McMaster University in Ontario, Canada. He has published in analytical, electrochemical, and instrumentation journals and contributed chaplers In books. He has coauthored a book on the characterization of semiconductor materials and coedited a book on the characterization of solid surfaces. Larrabee is a member of the ACS, Electrochemical Society, SAS, and the Dallas Society of Analytical Chemists. R. Allen Bowling received his B.S. In Chemistry from the University ol Alabama and a Ph.D. In Chemistry from ihe University of Tennessee.He held an Alexander von Humboldt postdoctoral research position at the Institute ol Inorganic Chemistry, University of Frankfurt, West Germany, from March 1979 to July 1980. He joined Texas Instruments Incorporated in September 1980 as a process control engineer in a semiconductor processing area. In January 1982, he became a member of the technical staff in the Materials Characterization Branch of the Materials Science Laboratory of Texas Instruments, where he is presently responsible for Auger and XPS instrumentation. Bowling is a member of the Electrochemical Society and the American Vacuum Society.

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Section: Semiconductorsmentioning

confidence: 99%

Forensic science

Brettell¹,

Saferstein²

1983

Anal. Chem.

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“…Furthermore, since the adsorbed hydrogen is known to desorb from the surfaces at low temperatures (below 500*C and below 200*C for Si(100) and Ge(100), respectively), the hydrogen-terminated surface can be particularly useful in low temperature processing. [4,5,6] The structural and electronic properties for the H-chemisorbed surface of Si(100) and Ge(100) have been characterized for many years. It is well known that when a clean surface of Si(100) is exposed to atomic hydrogen, three different surface structures are observed which are characterized by 2xl, 3x1 and lxl Low Energy Electron Diffraction (LEED) patterns.…”

Section: Introductionmentioning

confidence: 99%

Surface Electronic States of Low Temperature H-plasma Cleaned Si(100) and Ge(100) Surfaces

1992

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The surfaces of Si(100) and Ge(100), cleaned at low temperatures by H-plasma, were studied by Angle Resolved UV-Photoemission Spectroscopy(ARUPS). In the case of Si(100), H-plasma exposure produced ordered H-terminated crystallographic structures with either a 2×1 or 1×1 LEED pattern while for Ge(100) a weak H-terminated 2x1 pattern was obtained. The hydride phases, found on the surfaces of the cleaned Si(100), were shown to depend on the temperature of the surface during H-plasma cleaning. The electronic states for the monohydride and dihydride phases were identified by ARUPS. When the plasma cleaned surface was annealed, the phase transition from the dihydride to monohydride was observed. For the Ge(100) surface, an ordered 2x1 monohydride phase was obtained from the surface cleaned at 180°C. After plasma exposure at ≤170°C a 1×1 surface was observed, but the ARUPS indicated that the surface was predominantly composed of disordered monohydride structures. After annealing above the H-dissociation temperatures, the dangling bond surface states were identified for both Si and Ge. The Si(100) and Ge(100) ARUPS spectra shifted after annealing, indicating that the H-terminated surfaces were unpinned.

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