Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

Cordier, Y.; Frayssinet, Éric; Portail, Marc; Zieliński, Marcin; Chassagne, Thierry; Korytov, Maxim; Courville, Aimeric; Roy, S.; Némoz, M.; Chmielowska, Magdalena; Vennéguès, P.; Schenk, H. P. D.; Kennard, M.; Bavard, Alexis; Rondi, D.

doi:10.1016/j.jcrysgro.2014.04.007

Cited by 13 publications

(16 citation statements)

References 43 publications

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“…Previous studies have shown that the strain relaxation and dislocation density reduction in the grown GaN/3C-SiC/Si layers are affected by the thickness, roughness, off-cut angle, curvature magnitude and shape of the 3C-SiC/Si template 3 9 10 11 . Both thin (50 nm) and thick (2500 nm) SiC films have been reported to lead to the generation of cracks in GaN layers 2 11 , whereas an intermediate thickness of 700 ~ 1000 nm 3C-SiC/Si acted as the best template to suppress crack generation.…”

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confidence: 99%

Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

Wang

Walker

Chai

et al. 2015

Sci Rep

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A thin, chemically inert 3C-SiC layer between GaN and Si helps not only to avoid the “melt-back” effect, but also to inhibit the crack generation in the grown GaN layers. The quality of GaN layer is heavily dependent on the unique properties of the available 3C-SiC/Si templates. In this paper, the parameters influencing the roughness, crystalline quality, and wafer bow are investigated and engineered to obtain high quality, low roughness 3C-SiC/Si templates suitable for subsequent GaN growth and device processing. Kinetic surface roughening and SiC growth mechanisms, which depend on both deposition temperature and off-cut angle, are reported for heteroepitaxial growth of 3C-SiC on Si substrates. The narrower terrace width on 4° off-axis Si enhances the step-flow growth at 1200 °C, with the roughness of 3C-SiC remaining constant with increasing thickness, corresponding to a scaling exponent of zero. Crack-free 3C-SiC grown on 150-mm Si substrate with a wafer bow of less than 20 μm was achieved. Both concave and convex wafer bow can be obtained by in situ tuning of the deposited SiC layer thicknesses. The 3C-SiC grown on off-axis Si, compared to that grown on on-axis Si, has lower surface roughness, better crystallinity, and smaller bow magnitude.

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confidence: 99%

Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

Wang

Walker

Chai

et al. 2015

Sci Rep

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“…SiC lm was hetero-epitaxially grown on both 150 mm Si(111) and Si(100) substrates using custom-made hot wall LPCVD , and (d) SEM image of three dimensional Si islands deposited on SiC/Si(100) template with 60 min supply of 1.4 sccm SiH 4 , island density is of 1.9 Â 10 7 cm…”

Section: Discussionmentioning

confidence: 99%

Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates

et al. 2016

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a Low-cost large-diameter cubic silicon carbide (3C-SiC) film grown on silicon (Si) has been demonstrated to have a wide range of applications in photonics, electronics, photoelectrochemistry and micro-electromechanical system technologies. In this paper, the epitaxial growth of SiC on Si by low-pressure chemical vapour deposition is investigated. Two modes were employed to supply the precursors: the alternating supply and the simultaneous supply. Compared with SiC films grown at the same temperature by simultaneous supply epitaxy method, the SiC grown by alternating supply epitaxy (ASE) method has better crystallinity, smoother surface, and better thickness uniformity as confirmed by X-ray diffraction and atomic force microscopy characterisation. We propose the growth mechanism for ASE growth of 3C-SiC and validate it in detail experimentally. It is found that, Si deposition on SiC follows either Stranski-Krastanov mode or island growth mode, while SiC formation proceeds in two possible reaction paths: redistributing of the formed Si islands or smoothing of the formed SiC islands by decomposition migration process. Both reaction paths are driven by minimizing the surface free energy and reducing dangling bonds density. In summary, the key features of ASE are: (1) Si has a longer diffusion length and thus higher probability to adhere to a crystallographically favourable position; (2) undesirable gas phase reactions can be avoided. The obtained results indicate that ASE is a unique and economically viable method to prepare uniform 3C-SiC on multiple large-diameter Si wafers.

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“…The physical and chemical properties of 3C–SiC film is strictly related to the surface polarity . The (111) plane of 3C–SiC is a polar surface, concave wafer bending in SiC/Si(111) is preferred because it can be counteract the convex wafer bending in the grown GaN/AlN/Si system . Whereas, (001) plane of 3C–SiC is nonpolar, which is a specific surface for large area buffer‐free graphene growth .…”

Section: Introductionmentioning

confidence: 99%

“…1 The (111) plane of 3C-SiC is a polar surface, concave wafer bending in SiC/Si(111) is preferred because it can be counteract the convex wafer bending in the grown GaN/AlN/Si system. 2 Whereas, (001) plane of 3C-SiC is nonpolar, which is a specific surface for large area buffer-free graphene growth. [3][4][5] In addition, the electron mobility is highest in the low-packing (001) plane of 3C-SiC, Meijun Yang contributed equally to this work and should be considered co-first anthors.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

Zhu

Yang

et al. 2018

J Am Ceram Soc

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Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square (RMS) roughness (w) as a function of the film thickness (h) follows power laws of w~h0.31 and w~h0.06, respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.

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Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

Cited by 13 publications

References 43 publications

Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

Kinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substrates

Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

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