Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001)

Kim, H.J.; Chang, Joonyeon; Xie, Y. H.

doi:10.1016/s0022-0248(02)01980-2

Cited by 19 publications

(21 citation statements)

References 9 publications

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“…It has been well known that Ge SAQDs grown on a relaxed SiGe buffer layer preferentially nucleate along buried dislocations. 6,9 In cubic semiconductors such as Si, Ge, and most III-V compound semiconductors, dislocations of mixed edge-screw type 10 with the angle between Burgers vector and the dislocation line being 60°m ove fast through glide mechanism. As a result, they dominate the dislocation population.…”

Section: Introductionmentioning

confidence: 99%

Three-stage nucleation and growth of Ge self-assembled quantum dots grown on partially relaxed SiGe buffer layers

2003

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Three-stage nucleation and growth of Ge self-assembled quantum dots ͑SAQDs͒ on a relaxed SiGe buffer layer has been studied. Plastic relaxation of the SiGe buffer layer is associated with a network of buried 60°d islocations leading to an undulating strain field. As a result, the surface possesses three different types of sites for the nucleation and growth of Ge SAQDs: over the intersection of two perpendicular buried dislocations, over a single dislocation line, and in the region beyond one diffusion length away from any dislocation. Ge SAQDs are observed to nucleate exclusively over the dislocation intersections first, followed by over single dislocation lines, and finally in the region far away from dislocations. By increasing the Ge coverage at a slow rate, the prenucleation stage at the various sites is observed. It appears that the varying strain field has a significant effect on both the diffusion of Ge adatoms before SAQD nucleation, as well as the shape evolution of the SAQDs after they form. Moreover, two distinctly different self-assembly mechanisms are observed at different sites. There exist denuded zones free of Ge SAQDs adjacent to dislocation lines. The width of the denuded zone can be used to make direct determination of the Ge adatom diffusion lengths. The partially relaxed substrate provides a useful experimental vehicle for the in-depth understanding of the formation mechanism of SAQDs grown epitaxially in the Stranski-Krastanov growth mode.

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Section: Introductionmentioning

confidence: 99%

Three-stage nucleation and growth of Ge self-assembled quantum dots grown on partially relaxed SiGe buffer layers

2003

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“…Formation of self-organized nanostructures has been extensively studied in the past. 1 Preferential nucleation of the self-organized nanostructures along step edges, [2][3][4] dislocations [5][6][7][8] or domain boundaries 9,10 has been observed. It has been observed that for the Ge adatoms deposited on the Si surface there is a preferential growth at the domain boundaries.…”

Section: Introductionmentioning

confidence: 99%

“…This work has been motivated by experimental work on pattern formation in the deposition of Ge on Si(111)-(7 × 7) surfaces 11 as well as several other previous investigations. [2][3][4][5][6][7][8][9][10] We note that ours is a case of reaction-diffusion process in random media.…”

Section: Introductionmentioning

confidence: 99%

A reaction diffusion model of pattern formation in clustering of adatoms on silicon surfaces

et al. 2012

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We study a reaction diffusion model which describes the formation of patterns on surfaces having defects. Through this model, the primary goal is to study the growth process of Ge on Si surface. We consider a two species reaction diffusion process where the reacting species are assumed to diffuse on the two dimensional surface with first order interconversion reaction occuring at various defect sites which we call reaction centers. Two models of defects, namely a ring defect and a point defect are considered separately. As reaction centers are assumed to be strongly localized in space, the proposed reaction-diffusion model is found to be exactly solvable. We use Green's function method to study the dynamics of reaction diffusion processes. Further we explore this model through Monte Carlo (MC) simulations to study the growth processes in the presence of a large number of defects. The first passage time statistics has been studied numerically

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“…However, further developments of various applications depend on overcoming the major challenge of the problem; that is how to make quantum dots assemble themselves in a very precise manner, and how to control their size distributions during the fabrication process. One way to control the location of quantum dot nucleation and their size is the use of a functional substrate inducing a lateral self-organization by a buried dislocation network [3,4]. The network periodicity is controlled by the orientation angle between the substrate and the bonded film.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulations of the anisotropic elastic field of screw dislocation networks in twist boundaries

2008

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Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001)

Cited by 19 publications

References 9 publications

Three-stage nucleation and growth of Ge self-assembled quantum dots grown on partially relaxed SiGe buffer layers

Three-stage nucleation and growth of Ge self-assembled quantum dots grown on partially relaxed SiGe buffer layers

A reaction diffusion model of pattern formation in clustering of adatoms on silicon surfaces

Numerical simulations of the anisotropic elastic field of screw dislocation networks in twist boundaries

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