Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy

Ivaldi, F.; Meißner, Christian; Domagała, J. Z.; Kret, S.; Pristovsek, Markus; Högele, Michael; Kneissl, Michael

doi:10.1143/jjap.50.031004

Cited by 9 publications

(9 citation statements)

References 19 publications

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“…In addition, the critical thickness of the wetting layer for the formation of QD-like centers decreases when the indium composition of the InGaN layer increases [19,20]. Kobayashi reported an S-K growth mode InGaN layer of 50% indium without the formation of QDs on SiC substrate [21], but it was also reported that strained QDs were observed after a 0.9 monolayer (ML) was grown when growing InN on a GaN substrate [22,23]. We think it may be possible for the growth mode to change from the S-K growth mode to a complete V-W growth mode when the indium composition in InGaN increases from 50% to 100%.…”

Section: Resultsmentioning

confidence: 99%

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

et al. 2023

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In this study, the surface morphology and luminescence characteristics of InGaN/GaN multiple quantum wells were studied by applying different flow rates of ammonia during MOCVD growth, and the best growth conditions of InGaN layers for green laser diodes were explored. Different emission peak characteristics were observed in temperature-dependent photoluminescence (TDPL) examination, which showed significant structural changes in InGaN layers and in the appearance of composite structures of InGaN/GaN quantum wells and quantum-dot-like centers. It was shown that these changes are caused by several effects induced by ammonia, including both the promotion of indium corporation and corrosion from hydrogen caused by the decomposition of ammonia, as well as the decrease in the surface energy of InGaN dot-like centers. We carried out detailed research to determine ammonia’s mechanism of action during InGaN layer growth.

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Section: Resultsmentioning

confidence: 99%

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

et al. 2023

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“…The majority of InN QD growth to date has been conducted with TMIn 26,44,[48][49][50][51][52][53] . A few studies have been conducted on InN QDs which were grown using TEIn 27,54 .…”

Section: Group III Precursorsmentioning

confidence: 99%

“…The most common growth plane for III-nitride optoelectronics is the (0001) plane, also known as the c-plane or the metal-polar orientation. InN QDs are no exception, with the majority of studies being on metal-polar GaN 26,27,[49][50][51][52]54 . In this orientation, spontaneous and piezoelectric polarization typically have strong effects which depend on the composition and strain state of the material 66 .…”

Section: Metal-polar or (0001)mentioning

confidence: 99%

Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

et al. 2021

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Using one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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“…27 Considering the formation and the relaxation of GaN 3D islands we obtain a good fit to the a-lattice spacing evolution. However, the formation of strained or unstrained (In,Ga)N might also occur during capping by GaN, 28 although the presence of (In,Ga)N alone does not allow to properly fit the data.…”

mentioning

confidence: 99%

InN and GaN/InN monolayers grown on ZnO(0001¯) and ZnO(0001)

Ernst

Chèze

Calarco

2018

Journal of Applied Physics

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Thin InN and GaN/InN films were grown on oxygen-polar (O) (0001 ) and zinc-polar (Zn) (0001) zinc oxide (ZnO) by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the growth rate (GR) and the substrate polarity on the growth mode and the surface morphology of InN and GaN/InN was investigated in situ by reflection high-energy electron diffraction (RHEED) and ex situ by atomic force microscopy (AFM). During InN deposition, a transition from two dimensional to three dimensional (2D-3D) growth mode is observed in RHEED. The critical thickness for relaxation increases with decreasing GR and varies from 0.6 ML (GR: 1.0 ML/s) to 1.2 MLs (GR: 0.2 ML/s) on O-ZnO and from 1.2 MLs (GR: 0.5 ML/s) to 1.7 MLs (GR: 0.2 ML/s) on Zn-ZnO. The critical thickness for relaxation of GaN on top of 1.2 MLs and 1.5 MLs thick InN is close to zero on O-ZnO and 1.6 MLs on Zn-ZnO, respectively.

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Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy

Cited by 9 publications

References 19 publications

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

InN and GaN/InN monolayers grown on ZnO(0001¯) and ZnO(0001)

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