In this paper, deposition and electrical, optical and structural characterizations of the In 2 O 3 :Zn transparent conducting thin films are investigated. At first, undoped and non-stoichiometric n-In 2 O 3 thin films are deposited using an alcoholic solution by spray pyrolysis technique. Then, in order to prepare Zn-doped In 2 O 3 thin films, certain amounts of zinc chloride are added to the initial solution. Finally, the effects of Zn doping on electrical, optical and structural properties of In 2 O 3 films are studied. The results of XRD analysis, Hall effect experiment and resistivity measurement of films indicate that no phase change in In 2 O 3 lattice occurs in high acceptor doping condition, and for a given acceptor dopant (Zn 2+ ) concentration (∼6wt% in solution), electrical conductivity increases sharply and p-conductivity dominates.