Influence of Carrier–Carrier Interactions on the Noise Performance of Millimeter-Wave IMPATTs

Bandyopadhyay, Prasit Kumar; Biswas, Arindam; Bhattacharjee, A. K.; Acharyya, Aritra

doi:10.1080/03772063.2018.1433078

Cited by 8 publications

(9 citation statements)

References 16 publications

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“…The opencircuit condition without any applied high-frequency AC voltage signal was considered for the small-signal avalanche noise simulation [73]. Two second-order differential equations corresponding to the real and imaginary parts of the noise field were simultaneously solved, subject to appropriate boundary conditions, by using the Runge-Kutta method in order to obtain the noise field distribution along the depletion layer [74]. Here, band-to-band tunneling is considered as a noiseless instantaneous process.…”

Section: Simulation Methodsmentioning

confidence: 99%

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Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

et al. 2023

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A Schottky barrier high-electron-mobility avalanche transit time (HEM-ATT) structure is proposed for terahertz (THz) wave generation. The structure is laterally oriented and based on AlGaN/GaN two-dimensional electron gas (2-DEG). Trenches are introduced at different positions of the top AlGaN barrier layer for realizing different sheet carrier density profiles at the 2-DEG channel; the resulting devices are equivalent to high–low, low–high and low-high–low quasi-Read structures. The DC, large-signal and noise simulations of the HEM-ATTs were carried out using the Silvaco ATLAS platform, non-sinusoidal-voltage-excited large-signal and double-iterative field-maximum small-signal simulation models, respectively. The breakdown voltages of the devices estimated via simulation were validated by using experimental measurements; they were found to be around 17–18 V. Under large-signal conditions, the series resistance of the device is estimated to be around 20 Ω. The large-signal simulation shows that the HEM-ATT source is capable of delivering nearly 300 mW of continuous-wave peak power with 11% conversion efficiency at 1.0 THz, which is a significant improvement over the achievable THz power output and efficiency from the conventional vertical GaN double-drift region (DDR) IMPATT THz source. The noise performance of the THz source was found to be significantly improved by using the quasi-Read HEM-ATT structures compared to the conventional vertical Schottky barrier IMPATT structure. These devices are compatible with the state-of-the-art medium-scale semiconductor device fabrication processes, with scope for further miniaturization, and may have significant potential for application in compact biomedical spectroscopy systems as THz solid-state sources.

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Section: Simulation Methodsmentioning

confidence: 99%

“…Here, band-to-band tunneling is considered as a noiseless instantaneous process. This noise simulation method is known as the DIFM method [73,74]. Finally, from the knowledge of the mean square noise current and voltage, the transfer noise impedance at each space point of the depletion layer was calculated.…”

Section: Simulation Methodsmentioning

confidence: 99%

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

et al. 2023

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“…The simulation involved the simultaneous solution of two second-order differential equations representing the real and imaginary parts of the noise field, while adhering to appropriate boundary conditions. This computational approach employed the Runge-Kutta method and was designed to determine the noise field distribution along the depletion layer [38]. Notably, the band-to-band tunneling process was regarded as a noiseless instantaneous event, characterizing this noise simulation methodology as the DIFM method [37,38].…”

Section: Simulation Techniquementioning

confidence: 99%

Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation

Ghosh,

Deb,

Ghosh

et al. 2024

Preprint

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In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1−xN/GaN/AlxGa1−xN material system, with a fixed Aluminum mole fraction of x = 0.3. Two distinct MQW diode configurations, namely p+-n junction-based and Schottky barrier diode structures, are investigated for their THz potential. To enhance reverse breakdown characteristics, we employ mesa etching and nitrogen ion-implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise, improving overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and applications.

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“…The noise simulation of the mutually injection locked ten-element G-IMPATT sources have also been carried out at small-signal condition. 49 The equivalent circuit for avalanche noise simulation is shown in Figure 14, in which the diode impedances are replaced by noise sources v i ð Þ n , i = 1,2,3,:…, N . The noise measure vs frequency plots presented in Figure 15 show that the mutual injection locking causes slight increase in noise measure especially at higher operating F I G U R E 1 2 Variations of overall resistance and reactance of the ten-element 1.0 THz G-IMPATT source without injection locking and with mutual injection locking, with frequency for active layer length mismatch parameter varying in between ±10% F I G U R E 1 3 Variations of RF power output of the ten-element G-IMPATT sources without injection locking and with mutual injection locking, with frequency for active layer length mismatch parameter varying in between ±10%…”

Section: F I G U R Ementioning

confidence: 99%

“…The noise simulation of the mutually injection locked ten‐element G‐IMPATT sources have also been carried out at small‐signal condition 49 . The equivalent circuit for avalanche noise simulation is shown in Figure 14, in which the diode impedances are replaced by noise sources

v_{n}^{(i)}, i = 1, 2, 3, . \dots, N

.…”

Section: Characteristicsmentioning

confidence: 99%

Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

Acharyya

2020

Int J Numerical Modelling

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Mutual injection locking of multi-element graphene nanoribbon impact avalanche transit time (G-IMPATT) sources designed to operate at different millimeter-wave (mm-wave) and terahertz frequencies has been studied. Planar circuit is used for implementing the mutual injection locking between adjacent elements of the source operating in parallel-connected-powercombined mode. The static, high frequency and noise simulations of the proposed sources have been carried out by using in-house simulation codes based on self-consistent quantum drift-diffusion model. Results show that mutual injection locking between the adjacent elements forced the sources to oscillate nearly at a single frequency even if significantly high degree of mismatch is present among the elements of the multi-element oscillators. A minor amount of reduction in power out and insignificant deterioration in the noise performance of the multi-element G-IMPATT oscillators have been observed due to the presence of mutual injection locking between the adjacent elements.

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Influence of Carrier–Carrier Interactions on the Noise Performance of Millimeter-Wave IMPATTs

Cited by 8 publications

References 16 publications

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation

Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

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