Influence of Cu metal on the domain structure and carrier mobility in single-layer graphene

Orofeo, Carlo M.; Hibino, Hiroki; Kawahara, Kenji; Ogawa, Yui; Tsuji, Masaharu; Ikeda, Ken; Mizuno, Seigi; Ago, Hiroki

doi:10.1016/j.carbon.2012.01.030

Cited by 89 publications

(106 citation statements)

References 44 publications

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“…Up to now, this approach has resulted in graphene properties with best carrier mobility of 2500 cm 2 V À1 s À1 . 13 We have found a simple way to prepare an epitaxial copper foil on C-plane sapphire such that it can be subsequently peeled away. The peeling process exposes a fully intact Cu(111) crystalline surface, which is chemically clean and atomically flat.…”

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confidence: 99%

Chemical Vapor Deposition of Graphene on a “Peeled-Off” Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

Balasubramanian

Kim

et al. 2014

ACS Nano

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We present a simple approach to improving the quality of CVD grown graphene, exploiting a Cu(111) foil catalyst. The catalyst is epitaxially grown by evaporation on a single crystal sapphire substrate, thickened by electroplating, and peeled off. The exposed surface is atomically flat, easily reduced, and exclusively of (111) orientation. Graphene grown on this catalyst under atmospheric CVD conditions and without wet chemical prereduction produces single crystal domain sizes of several hundred micrometers in samples that are many centimeters in size. The graphene produced in this way can easily be transferred to other substrates using well-established techniques. We report mobilities extracted using field-effect (as high as 29 000 cm2 V–1 s–1) and Hall bar measurement (up to 10 100 cm2 V–1 s–1).

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confidence: 99%

Chemical Vapor Deposition of Graphene on a “Peeled-Off” Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

Balasubramanian

Kim

et al. 2014

ACS Nano

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“…To avoid the presence of Cu grain boundaries and transition between individual Cu lattice orientations, both of which largely affect the resulting graphene, epitaxial growth on surfaces with defined long-range crystalline order is particularly appealing [15,18,[25][26][27][28][29][30][31][32]. The studies conducted on single crystals may provide direct information about the effects of Cu lattice on the graphene growth as a function of pressure/temperature, without the perturbations from Cu grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

Interaction between graphene and copper substrate: The role of lattice orientation

Frank

Vejpravová

Holý

et al. 2014

Carbon

198

192

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We present a comprehensive study of graphene grown by chemical vapor deposition on copper single crystals with exposed (100), (110) and (111) faces. Direct examination of the as-grown graphene by Raman spectroscopy using a range of visible excitation energies and microRaman mapping shows distinct strain and doping levels for individual Cu surfaces. Comparison of results from Raman mapping with X-ray diffraction techniques and Atomic Force Microscopy shows it is neither the crystal quality nor the surface topography responsible for the specific strain and doping values, but it is the Cu lattice orientation itself. We also report an exceptionally narrow Raman 2D band width caused by the interaction between graphene and metallic substrate. The appearance of this extremely narrow 2D band with full-width-at-half maximum (FWHM) as low as 16 cm -1 is correlated with flat and undoped regions on the Cu(100) and (110) surfaces.The generally compressed (~ 0.3% of strain) and n-doped (Fermi level shift of ~250 meV) graphene on Cu (111) shows the 2D band FWHM minimum of ~20 cm -1 . In contrast, graphene grown on Cu foil under the same conditions reflects the heterogeneity of the polycrystalline surface and its 2D band is accordingly broader with FWHM > 24 cm -1 .

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“…The SLG was transferred to an SiO 2 /Si substrate (SiO 2 is 300 nm thick, and the details were described in elsewhere [10]). Figure 1a shows a schematic image of the sample used in this study.…”

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Dynamically generated pure spin current in single-layer graphene

et al. 2013

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The conductance mismatch problem limits the spin-injection efficiency significantly, and spin-injection into graphene has been usually requiring high-quality tunnel barriers to circumvent the conductance mismatch. We introduce a novel approach, which enables generation of a pure spin current into single-layer graphene (SLG) free from electrical conductance mismatch by using dynamical spin injection. Experimental demonstration of spin-pumping-induced spin current generation and spin transport in SLG at room temperature was successfully achieved and the spin coherence was estimated to be 1.36 µm by using a conventional theoretical model based on Landau-Lifshitz-Gilbert equation. The spin coherence is proportional to the quality of SLG, which indicates that spin relaxation in SLG is governed by the Elliot-Yafet mechanism as was reported.

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Influence of Cu metal on the domain structure and carrier mobility in single-layer graphene

Cited by 89 publications

References 44 publications

Chemical Vapor Deposition of Graphene on a “Peeled-Off” Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

Chemical Vapor Deposition of Graphene on a “Peeled-Off” Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

Interaction between graphene and copper substrate: The role of lattice orientation

Dynamically generated pure spin current in single-layer graphene

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