Influence of Defects and Heteroatoms on the Chemical Properties of Supported Graphene Layers

Carraro, Giovanni; Savio, Letizia; Vattuone, L.

doi:10.3390/coatings12030397

Cited by 12 publications

(6 citation statements)

References 65 publications

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“…The defected graphene overlayer increased the sensitivity to water and toluene. This agrees with recent calculations showing that toluene [43] and water [47,48] adsorb better to graphene with defects. In comparison, exposure to ethanol and 2-propanol resulted in similar optical responses, while acetone even gave a reduced signal on defected graphene.…”

Section: Resultssupporting

confidence: 93%

Graphene-Encapsulated Silver Nanoparticles for Plasmonic Vapor Sensing

et al. 2022

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Graphene-covered silver nanoparticles were prepared directly on highly oriented pyrolytic graphite substrates and characterized by atomic force microscopy. UV–Vis reflectance spectroscopy was used to measure the shift in the local surface plasmon resonance (LSPR) upon exposure to acetone, ethanol, 2-propanol, toluene, and water vapor. The optical responses were found to be substance-specific, as also demonstrated by principal component analysis. Point defects were introduced in the structure of the graphene overlayer by O2 plasma. The LSPR was affected by the plasma treatment, but it was completely recovered using subsequent annealing. It was found that the presence of defects increased the response for toluene and water while decreasing it for acetone.

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Section: Resultssupporting

confidence: 93%

Graphene-Encapsulated Silver Nanoparticles for Plasmonic Vapor Sensing

et al. 2022

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“…[ 96 ] Earlier (in 2022), a detailed study on the effect of the defects and heteroatoms on the chemical features of supported graphene layers was reported by Vattuone and co‐workers. [ 97 ]…”

Section: Influence Of Sw Defect On Properties Of Graphenementioning

confidence: 99%

Stone–Wales Defect in Graphene

Tiwari

Pandey

et al. 2023

Small

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Abstract2D graphene the most investigated structures from nanocarbon family studied in the last three decades. It is projected as an excellent material useful for quantum computing, artificial intelligence, and next generation advanced technologies. Graphene exists in several forms and its extraordinary thermal, mechanical, and electronic properties, principally depend on the kind of perfection of the hexagonal atomic lattice. Defects are always considered as undesired components but certain defects in graphene could be an asset for electrochemistry and quantum electronics due to the engineered electronclouds and quantum tunnelling. The authors carefully discuss the Stone‐Wales imperfections in graphene and its derivatives comprehensively. A specific emphasis is focused on the experimental and theoretical aspects of the Stone‐Wales defects in graphene with respect to structure‐property relationships. The corroboration of extrinsic defects like external atomic doping, functionalization, edge distortion in the graphene consisting of Stone‐Wales imperfections, which are very significant in designing graphene‐based electronic devices, are summarized.

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“…In some previous studies on VRD reactors, it was reported that the inlet flow affected the film deposition rate and film thickness uniformity [26]. A simplified rotation model was developed by Makino et al; from the reaction model of deposition of Si in a gas mixture of SiHCl 3 -H 2 , the effect of gas flow on the deposition rate of silicon in a VRD reactor was studied according to the method of the normalized central moment [8]. Both Coltrin and Makino proposed a moderate flow rate (about 90 SLM (standard liters per minute)) as "the ideal inlet velocity of the disk" [27].…”

Section: Influence Of Intake Flow Rate On Graphene Deposition Ratementioning

confidence: 99%

“…Among them, the chemical vapor deposition (CVD) method has the advantages of high quality, large area, controllable layer number, good repeatability, and low cost, which is expected to achieve large-scale industrial preparation of graphene and has obtained the continuous attention and exploration of scientific research workers. The CVD process of graphene growth involves a series of complex gas-phase surface chemical reactions, generally through three processes [8,9]: gas phase decomposition, surface chemical reaction, and gas phase diffusion. The complexity of graphene growth by CVD is that it involves not only chemical reactions but also mass, momentum, and energy transfer.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of a Simplified Reaction Model for the Growth of Graphene via Chemical Vapor Deposition in Vertical Rotating Disk Reactor

Yang

Zhao

et al. 2023

Coatings

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The process of graphene growth by CVD involves a series of complex gas-phase surface chemical reactions, which generally go through three processes, including gas phase decomposition, surface chemical reaction, and gas phase diffusion. The complexity of the CVD process for growing graphene is that it involves not only chemical reactions but also mass, momentum, and energy transfer. To solve these problems, the method of numerical simulation combined with the reactor structure optimization model provides a good tool for industrial production and theoretical research to explore the influencing factors of the CVD growth of graphene. The objective of this study was to establish a simplified reaction model for the growth of graphene by chemical vapor deposition(CVD) in a vertical rotating disk reactor (VRD). From a macroscopic modeling perspective, computational fluid dynamics (CFD) was used to investigate the conditions for the growth of graphene by chemical vapor deposition in a high-speed rotating vertical disk reactor on a copper substrate surface at atmospheric pressure (101,325 Pa). The effects of gas temperature, air inlet velocity, base rotation speed, and material ratio on the surface deposition rate of graphene in a VRD reactor were studied, and the technological conditions for the preparation of graphene via the CVD method in a VRD reactor based on a special structure were explored. Compared with existing models, the numerical results showed the following: the ideal growth conditions of graphene prepared using a CVD method in a VRD reactor involve a growth temperature of 1310 K, an intake speed of 470 mL/min, a base speed of 300 rpm, and an H2 flow rate of 75 sccm; thus, more uniform graphene with a better surface density and higher quality can be obtained. The effect of the carbon surface deposition rate on the growth behavior of graphene was studied using molecular dynamics (MD) from a microscopic perspective. The simulation showed that the graphene surface deposition rate could control the nucleation density of graphene. The combination of macro- and microsimulation methods was used to provide a theoretical reference for the production of graphene.

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Influence of Defects and Heteroatoms on the Chemical Properties of Supported Graphene Layers

Cited by 12 publications

References 65 publications

Graphene-Encapsulated Silver Nanoparticles for Plasmonic Vapor Sensing

Graphene-Encapsulated Silver Nanoparticles for Plasmonic Vapor Sensing

Stone–Wales Defect in Graphene

Numerical Simulation of a Simplified Reaction Model for the Growth of Graphene via Chemical Vapor Deposition in Vertical Rotating Disk Reactor

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