Influence of Defects on the Splitting of the Acceptor Ground State in Silicon

Ambrosy, A.; Laßmann, Kurt; Goër, A. M. de; Salce, B.; Zeile, Heinrich

doi:10.1007/978-3-642-82163-9_88

Cited by 5 publications

(3 citation statements)

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“…A subsequent PL study confirmed that the doublet splittings arose from the A 0 final state of the A 0 X PL transitions and revealed a similar 0:10 AE 0:01 cm À1 doublet splitting for the Ga A 0 ground state, and a 0:15 AE 0:03 cm À1 A 0 splitting for the deeper In acceptor [37][38][39]. The 0:15 AE 0:03 cm À1 splitting found for the indium A 0 state in the PL study [37] agrees well with the phonon spectroscopy [31] result of 0:11 to 0:16 cm À1 , and the failure to detect the B splitting ($0:043 cm À1 as determined by phonon spectroscopy [28,29,31]) in the PL studies was consistent with the PL observed linewidth of the boron BE components of $0:08 cm À1 resulting from a combination of insufficient instrumental resolution and PL broadening effects.…”

Section: Resultssupporting

confidence: 83%

“…The acceptor states and acceptor BE transitions have been studied by a variety of different experimental techniques such as electron spin resonance (ESR) [23,24], thermal conductivity studies [32][33][34], phonon absorption spectroscopy [25][26][27][28][29][30][31]46] and, most recently, by photoluminescence [35][36][37][38][39]. While electron paramagnetic resonance (EPR) was detected for electrons bound to neutral donor impurities (D 0 ) in Si very early in the development of the semiconductor physics [47], careful searches for EPR from holes bound to neutral acceptors (A 0 ) in Si were initially unsuccessful, as summarized by Kohn [48], who was also the first to point out that the problem likely resulted from the four-fold degeneracy of the A 0 ground state.…”

Section: Resultsmentioning

confidence: 99%

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Photoluminescence studies of isotopically enriched silicon

Karaiskaj

Thewalt

Ruf

et al. 2002

Physica Status Solidi (b)

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We report the first high resolution photoluminescence studies of isotopically pure silicon. New information is obtained on isotopic effects on the indirect band gap energy, phonon energies, and phonon broadenings, which is in good agreement with previous results obtained in germanium and diamond. Remarkably, the line widths of the no-phonon boron and phosphorus bound exciton transitions in the 28 Si sample (99:896% 28 Si) are much sharper than in natural Si, revealing new fine structure in the boron bound exciton luminescence. Most surprisingly, the small splittings of the neutral acceptor ground state in natural Si are absent in the photoluminescence spectra of acceptor bound excitons in isotopically purified 28 Si, demonstrating conclusively that they result from the randomness of the Si isotopic composition.

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Section: Resultssupporting

confidence: 83%

Section: Resultsmentioning

confidence: 99%

Photoluminescence studies of isotopically enriched silicon

Karaiskaj

Thewalt

Ruf

et al. 2002

Physica Status Solidi (b)

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“…Random internal strains originating from crystal defects will thus lead to distributions of the separations of these TLS. The dependence of the width and form of such distributions on the concentration of point defects has been investigated previously [1] at temperatures above 1 K. Relaxation times T 1 and T 2 have been obtained in this temperature range from relaxation attenuation, saturation, and hole burning [2].…”

Section: Introductionmentioning

confidence: 98%

Magnetic field dependence of the acoustic two‐pulse echo envelope modulation in Si:B at very low temperatures

Prieur

Joffrin

Laßmann

et al. 2004

phys. stat. sol. (c)

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At temperatures below about 30 mK in Si:B the phase relaxation time T 2 of the two-level systems associated with the acceptor ground state can be determined from the decay of the two-pulse echo. It has been shown to depend on the concentration of interacting resonant states if the latter is high enough. This concentration is not only given by the boron concentration but depends also on internal and external stress, and the magnetic field. Under conditions of low concentration T 2 becomes long and we observe a modulation of the echo decay. From its dependence on magnetic field strength we can associate this modulation with the interaction of the acceptor hole with the 29 Si nuclei (I = 1/2) present within the extended acceptor wave function. The interaction with the central boron nucleus does not seem to contribute to the observed modulation. IntroductionThe fourfold degenerate Γ 8 ground state of acceptors such as boron in silicon becomes a two-level system (TLS) of two two-fold degenerate Kramers-levels by the application of stress. Random internal strains originating from crystal defects will thus lead to distributions of the separations of these TLS. The dependence of the width and form of such distributions on the concentration of point defects has been investigated previously [1] at temperatures above 1 K. Relaxation times T 1 and T 2 have been obtained in this temperature range from relaxation attenuation, saturation, and hole burning [2].At much lower temperatures we have found [3] that the relaxation times are long enough to observe phonon echoes, acoustic solitons and sound amplification as was previously observed for the TLS of glasses (see e.g. [4]). The phase relaxation time T 2 was determined from the decay of the acoustic two-pulse echo amplitude. ¿From its dependence on boron concentration, internal and external stress, and magnetic field we concluded that the spin-spin interaction is determined by the concentration of TLS on speaking terms if this concentration is high enough. In these experiments the magnetic field was the only parameter that could be used to change the concentration of resonant interacting TLS during a low-temperature run. This change is effected by the additional splitting of the two Kramers doublets so that one gets a changed distribution of level separations due to the mixed effect of stress and magnetic field.Here we show that in the case of low boron doping and broader distribution of TLS T 2 becomes longer and does not depend significantly on the magnetic field, i.e. resonant spin-spin interaction is not any more predominant. In addition we find that the echo amplitude does not decay monotonously with time but is modulated in some analogy to a recent observation for polarization echoes in glasses [5]. In the following we will concentrate on this latter observation.

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Investigation of positively charged acceptor states in Si and Ge under uniaxial stress by phonon induced conduction

Groß¹,

Laßmann²

1995

Annalen der Physik

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We use superconducting Al-tunnel junctions as tunable phonon generators in the meV-range to determine ground state splitting at zero stress of positively charged states associated with single ac-' ceptors in Si and double acceptors in Ge. From the stress and energy dependence of the conductivity induced by high frequency phonon irradiation of the corresponding two-and three-hole states we find that the splitting is below 0.1 meV for the ground states of Si: B+ and Ge: Be+, and 1 meV and 1.2 meV for Si : Ga+ and Si : A]+, respectively. These level separations are comparable to those found previously for the ground states of the corresponding acceptor bound excitons A%. For the deeper acceptors Si: In+, Si: T1+, and Ge: Zn+ the results are qualitatively different.

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Influence of Defects on the Splitting of the Acceptor Ground State in Silicon

Cited by 5 publications

References 2 publications

Photoluminescence studies of isotopically enriched silicon

Photoluminescence studies of isotopically enriched silicon

Magnetic field dependence of the acoustic two‐pulse echo envelope modulation in Si:B at very low temperatures

Investigation of positively charged acceptor states in Si and Ge under uniaxial stress by phonon induced conduction

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