2001
DOI: 10.1016/s0168-9002(00)00868-8
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Influence of detector surface processing on detector performance

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Cited by 24 publications
(5 citation statements)
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“…It has previously been reported such variation in interface depth was related to polishing damage and associated sub-surface strain [27], however this variation has also been observed in chemo-mechanically polished surfaces following electroless deposition but not following sputter deposition [28]. Chemical or chemo-mechanical etching, with agents such as bromine methanol, has been demonstrated to remove polishing induced surface damage [29][30][31]. It was concluded that the variation observed in the present study was the result of a localized difference in the rate of reaction of the electroless process.…”
Section: Fib and Tem Analysismentioning
confidence: 98%
“…It has previously been reported such variation in interface depth was related to polishing damage and associated sub-surface strain [27], however this variation has also been observed in chemo-mechanically polished surfaces following electroless deposition but not following sputter deposition [28]. Chemical or chemo-mechanical etching, with agents such as bromine methanol, has been demonstrated to remove polishing induced surface damage [29][30][31]. It was concluded that the variation observed in the present study was the result of a localized difference in the rate of reaction of the electroless process.…”
Section: Fib and Tem Analysismentioning
confidence: 98%
“…In the preparation process of CdZnTe detector, the leakage current is the main source of noise for the detector. The surface leakage current formed by the surface conductive layer and the in uence of electrode injection or blocking on the bulk leakage current are two important problems that seriously reduce the detection ef ciency [8] . In addition, the internal electric eld distribution and the composite centers in the body and near the surface are the factors affecting the current collection ef ciency and leakage current.…”
Section: Detector Preparation Processmentioning
confidence: 99%
“…Теллурид кадмия -широкозонное II−VI соединение, которое благодаря высокому среднему атомному номеру и хорошему произведению подвижности на время жизни носителей как для электронов, так и дырок широко используется для X−γ-и ядерных детекторов [1,2]. Монокристаллы теллурида кадмия благодаря своему высокому удельному сопротивлению и широкой запре-щенной зоне имеют низкие токи утечки, вследствие чего детекторы на их основе могут функционировать при комнатной температуре.…”
Section: Introductionunclassified