Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors

Abstract

We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorusdoped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.

A comparative study on radiation reliability of composite channel InP high electron mobility transistors*

“…In recent years, high-precision sensing and high-quality communication have imposed huge requirements on the operating frequency of integrated circuits, which has increased from W-band to G-band or even terahertz. [1,2] A variety of techniques are adopted to extend the Moore' law and improve the devices' frequency characteristics, such as novel structures [3,4] and fabrication technology. [5] The InP-based high electron mobility transistors (HEMTs) have demonstrated high carrier sheet density, peak drift velocity, and low-field mobility, and the recorded frequency characteristics have exceeded 1 THz.…”

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

“…In nearly several decades, many effective measures have been taken to extend Moore's law, such as advanced micro/nano-fabrication technologies, novel materials and structures. [1][2][3] Because of high carrier sheet density, high carrier peak drift velocity, and low-field mobility in InGaAs channel, InAlAs/InGaAs InP-based high electron mobility transistors (HEMTs) have stood out and become competitive alternatives with high frequency, low noise figure, superior gain performance, and so on. [4][5][6] Furthermore, benefiting from electron beam lithography (EBL) and molecular beam epitaxy (MBE) techniques, the current gain cut-off frequency ( f T ) and maximum oscillation frequency ( f max ) of InP-based HEMTs have been reported to be over than 700 GHz [7] and 1 THz, [8] respectively.…”

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors*

“…In this case, a QD array is spontaneously formed and the carrier transports in the channel center. [14,15] As a novel approach for realizing multiple QDs, JNTs offer a variety of appealing physical properties. This design allows multiple coupled QDs to be arbitrarily positioned along a heavilydoped channel.…”