Influence of electrode parameters on the performance of optically controlled MESFETs

Alsunaidi, M. A.; Al-Absi, Munir A.

doi:10.1016/j.optlastec.2007.10.009

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…The surface conduction of these holes contributes to the formation of Schottky p-type junctions with some metals like aluminum, thereby giving the possibility to fabricate opaque-gate surface channel MESFETs. Shubha et al [53] and Alsunaidi et al [54] deeply investigated the modeling of opaque-gate devices on GaAs based structures. On the other hand, OpFET fabricated on hydrogenated diamond cannot be analyzed on the basis of these models because the quasi-2D hole accumulation and the apparent short channel effects.…”

Section: Optically Activated Field Effect Transistors (Opfets)mentioning

confidence: 99%

Diamond device architectures for UV laser monitoring

et al. 2016

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The paper reviews the status of diamond detectors for UV laser monitoring and imaging. Single pixel detectors, position sensitive architectures, optically activated switches and sensor arrays for beam positioning and imaging are analyzed. The performances of natural diamond and synthetic diamond produced by chemical vapor deposition are compared to evaluate the suitability of such an outstanding material for the described applications.

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Section: Optically Activated Field Effect Transistors (Opfets)mentioning

confidence: 99%

Diamond device architectures for UV laser monitoring

et al. 2016

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“…The surface conduction of these holes contributes to the formation of Schottky p-type junctions with some metals like aluminum and chromium. Modeling of opaque gate optically activated FET devices was investigated by Shubha et al [13] and Alsunaidi et al [14] on GaAs based structures. Noise studies and analysis of dynamic performance were also reported [15,16].…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline diamond UV-triggered MESFET receivers

et al. 2012

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Optically triggered UV sensitive receivers were fabricated on polycrystalline diamond as surface channel MESFETs. Opaque gates with asymmetric structure were designed in order to improve charge photogeneration mainly within the gate-drain region. Photogenerated holes contributed to the channel charge by assistance of the local electric field, in such a way improving the current signal at the drain contact. The sensitivity to UV light is demonstrated by using 3 ns wide laser pulses at 193 nm, well over the diamond bandgap. The receiver transient response to such laser pulses shows that the photogeneration process is only limited by the pulse rise time and charge collection at the drain contact completed in a time scale of a few nanoseconds. Such opaque gate three-terminal devices are suitable for application in emerging photonic technologies, for power-management system optical receivers, where copper wires and EM shielding can be replaced by lightweight optical fibers.

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