Influence of electrode size on resistance switching effect in nanogap junctions

Abstract

The size dependence of the resistance switching effect in nanogap junctions was investigated to determine the nature of the local structural changes responsible for the effect. The maximum current, during resistance switching, decreased with the total emission area across the nanogap to an average of 146 μA at a linewidth of 45 nm. This implies that the resistance switching effect stems from changes in the gap width at multiple local sites on the metal surface.

Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

“…However, we cannot rule out the migration of Au atoms and its contribution to the performance of the device. Reports on nanogap electrodes fabricated through a nondestructive way such as EBL or shadow‐mask techniques have also demonstrated the behavior of resistive switching, and the mechanism was attributed to the migration of metal atoms, in which the electric fields required to trigger the migration of metal atoms and related switching are around MV cm −1 , agreeing with the reported value obtained through the other way . Since the electric field to trigger the switch is about the same order of magnitude here, migration of Au atoms can also take place in the process and can contribute to the conductance by either shrinking the gap width or forming a few CFs.…”

Non-volatile high-speed resistance switching nanogap junction memory

“…The nanogap junction is capable of switching its resistance value over a wide range of speeds in the OFF state whereas the R s and C determine the speed in the ON state switching since the mechanism involved in switching is different. 12,16,17 In conclusion, we have demonstrated the resistance switching in a nanogap junction using voltage pulses in both directions. The ON state switching is executed by introducing a series resistance to the nanogap junction.…”

“…Although the OFF state switching with ls pulse width was demonstrated 15 in the past, it is too slow in comparison to other resistive memories. The ON state switching was accomplished in the voltage sweep mode 12,16 only and the switching in pulse mode is not reported yet. In this letter, we demonstrate not only the ON state operation in pulse mode but also the switching capability of nanogap junction in ns speed on either direction cyclically.…”

“…The data points are averaged over 20 cycles and the error bar is the standard deviation from the average value. The OFF state switching is a consequence of electromigration process 16 where the migration is governed by the current density. The resistance of the nanogap junction increases with the increase of pulse height which is advantageous for multilevel programming.…”

Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons

“…It should be noted that there are several reports on memory effects in metal nanogaps with Au or Pt electrodes. [26][27][28][29] Some reports suggest that the operation mechanism of the nanogap memory is the modulation of tunnel conduction by the change in nanogap width. Therefore, the formation of nanogap in the disconnected area may be the reason for the memory effects in the present graphene ReRAM.…”