Influence of growing conditions on the reactivity of Ni supported graphene towards CO

Celasco, Edvige; Carraro, Giovanni; Smerieri, Marco; Savio, Letizia; Rocca, M.; Vattuone, L.

doi:10.1063/1.4978234

Cited by 16 publications

(10 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Single layers of hBN can be produced via chemical vapor deposition (CVD) on various single-crystal metal substrates [11][12][13][14][15][16][17][18]. Similar to the case of epitaxial G [19,20], some metals are characterized by strong interaction with hBN, such as Ru(0001) or Rh(111), while on other substrates hBN is more weakly bound, e.g., on Pt(111) or Cu(111) [21][22][23]. Optimal hBN production requires a substrate to which, on the one hand, hBN binds sufficiently strongly to enable the growth of uniformly oriented domains and on the other hand, does not bind too strongly in order to preserve its intrinsic properties.…”

Section: Introductionmentioning

confidence: 99%

Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)

Petrović

Hagemann²,

Hoegen

et al. 2017

Applied Surface Science

View full text Add to dashboard Cite

Large hexagonal boron nitride (hBN) single-layer islands of high crystalline quality were grown on Ir(111) via chemical vapor deposition (CVD) and have been studied with low-energy electron microscopy (LEEM). Two types of hBN islands have been observed that structurally differ in their shape and orientation with respect to iridium, where the former greatly depends on the iridium step morphology. Photoemission electron microscopy (PEEM) and IV-LEEM spectroscopy revealed that the two island types also exhibit different work functions and bindings to iridium, which provides an explanation for differences in their shape and growth modes. In addition, various temperatures were used for the CVD synthesis of hBN, and it was found that at temperatures higher than ~950 {\deg}C boron atoms, originating either from decomposed borazine molecules or disintegrated hBN islands, can form additional compact reconstructed regions. The presented results are important for advancement in synthesis of high-quality hBN and other boron-based layered materials, and could therefore expedite their technological implementation.Comment: 9 pages, 6 figure

show abstract

Section: Introductionmentioning

confidence: 99%

Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)

Petrović

Hagemann²,

Hoegen

et al. 2017

Applied Surface Science

View full text Add to dashboard Cite

show abstract

“…Starting from higher binding energy, we found top hcp, top fcc, top bridge and rotated graphene respect to the substrate, and the presence of nickel carbide or dissolved carbon [11]. In order to investigate in a more semi-quantitative way how these differences could influence the CO reactivity, an accurate fitting procedure was carried on reference Celasco et al 2 One representative spectra of this fitting procedure is reported in Fig. 2, on 823 DD1 spectrum.…”

Section: Resultsmentioning

confidence: 98%

Chemical Reactivity and Electronical Properties of Graphene and Reduced Graphene Oxide on Different Substrates

Celasco

2019

Adv. Mater. Lett.

Self Cite

View full text Add to dashboard Cite

The chemical reactivity and the electronical properties variation of graphene (G) supported on Ni(111) and of the reduced Graphene Oxide (rGO) will be described thanks to the framework of University of Genoa and Polytechnic of Turin. We will present the main results obtained on the reactivity, towards CO, of pristine graphene grown on Ni(111). Single layer graphene films are grown by ethene dehydrogenation on Nickel, under different experimental conditions, and the system is studied in-situ by X-ray Photoemission and High-Resolution Electron Energy Loss Spectroscopies before and after CO exposure at 87 K and at room temperature. The main results were:-the best CO reactivity in the top-fcc configuration [1] of graphene on Ni(111), at low temperature [2]-the higher reactivity occurs in the case of minimum percentage of contaminant or Ni2C still present during the grown process.-a reactivity toward CO at room temperature on graphene with punctual controlled defects by sputtering, with possible applications e.g., gas sensing [3, 4]. More applicative aspect is the modification of GO in rGO, by UV based process. During the reduction, electrical properties is improved, opening possible application in the ink-jet printing mechanism as conductive printing system, coating or in the functionalization [5] of G.

show abstract

“…Darkfield PEEM is very powerful to probe the local electronic properties of heterogeneous surfaces. For example, it has been employed on graphene grown on Ni (111), a model case for the study of interfacial interactions that can play a key role in tailoring the magnetic [131] and chemical [132] properties of 2D materials. In particular, darkfield PEEM was used to determine the lateral extension of epitaxial and rotated monolayer graphene grown on Ni (111), and to identify particular areas in which the rotated graphene is metallic due to the formation of an interstitial carbide layer [130].…”

Section: Brightfield and Darkfield Peemmentioning

confidence: 99%

Imaging at the Mesoscale (LEEM, PEEM)

Sala

2020

Springer Handbooks

View full text Add to dashboard Cite

TO BE PUBLISHED IN SPRINGER HANDBOOK OF SURFACE SCIENCE (SPRINGER VERLAG)TABLE OF CONTENTS 1. INTRODUCTION 2. CATHODE LENS MICROSCOPY 2.1. OPERATING PRINCIPLES 2.2. INSTRUMENTATION 2.2.1. BEAM SEPARATOR 2.2.2. ENERGY ANALYZERS 2.2.3. ABERRATION CORRECTORS 2.2.4. ELECTRON AND PHOTON SOURCES 2.3. PERFORMANCES 3. LOW ENERGY ELECTRON MICROSCOPY 3.0.1 BASIC IMAGE CONTRAST 3.0.2 IMAGE FORMATION 3.1 IMAGING MODE 3.1.1 LEEM AND LEEM-IV 3.1.2 BRIGHTFIELD AND DARKFIELD LEEM 3.1.3 MIRROR ELECTRON MICROSCOPY 3.1.4 SPIN POLARIZED LEEM 3.1.5 ELECTRON ENERGY LOSS MICROSCOPY 3.2 DIFFRACTION MODE 3.2.1 U-LEED 3.2.2 SPOT PROFILE ANALYSIS AND LEED-IV 3.3 SPECTROSCOPY MODE 3.3.1 U-EELS 4 PHOTOEMISSION ELECTRON MICROSCOPY 4.0.1 BASIC IMAGE CONTRAST 4.0.2 SPACE CHARGE EFFECTS 4.1 IMAGING MODE 4.1.1 PEEM AND XPEEM 4.1.2 BRIGHTFIELD AND DARKFIELD PEEM 4.1.3 XAS-PEEM AND MAGNETIC PEEM IMAGING 4.2 DIFFRACTION MODE 4.2.1 U-ARPES AND U-XPD 4.3 SPECTROSCOPY MODE 4.3.1 U-XPS 5 PERSPECTIVES

show abstract

Influence of growing conditions on the reactivity of Ni supported graphene towards CO

Cited by 16 publications

References 27 publications

Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)

Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)

Chemical Reactivity and Electronical Properties of Graphene and Reduced Graphene Oxide on Different Substrates

Imaging at the Mesoscale (LEEM, PEEM)

Contact Info

Product

Resources

About