Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN

Xu, Yue; Yang, Xuelin; Zhang, Peng; Cao, Xingzhong; Chen, Yao; Guo, Shiping; Wu, Shan; Zhang, Jie; Feng, Yuxia; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo

doi:10.7567/1882-0786/ab1c19

Cited by 10 publications

(8 citation statements)

References 31 publications

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“…This was supported by an increase in YL1 intensity after thermal annealing. [101] The conversion was observed to start between 700 C and 800 C, which roughly agrees with a predicted C migration starting at temperatures above 900 K (627 C). [102] The same group also pointed out that the doping sources likely influence the lattice sites of incorporated C, as no increase in V Ga defects was found for GaN doped by propane.…”

Section: High C Concentration: Carbon On Ga Site -C Gasupporting

confidence: 82%

“…[102] The same group also pointed out that the doping sources likely influence the lattice sites of incorporated C, as no increase in V Ga defects was found for GaN doped by propane. [101] Based on the early GGA and LDA-predicted shallow C N acceptor level, blue luminescence bands in C-doped GaN are sometimes proposed to originate from DAP-type transitions between the C Ga donor level and the C N acceptor level. [46,57,88,98,103,104] Regarding the considerably deeper nature of the C N acceptor level derived by state-of-the-art first-principles calculations (see Section 2.1), this attribution should be revised.…”

Section: High C Concentration: Carbon On Ga Site -C Gamentioning

confidence: 99%

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Current Status of Carbon‐Related Defect Luminescence in GaN

Zimmermann

Beyer

Röder

et al. 2021

Physica Status Solidi (a)

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Gallium nitride (GaN) has become an indispensable compound semiconductor due to its numerous applications in opto- [1,2] and microelectronic [3,4] devices. GaN-based light emitting diodes and laser diodes show higher efficiencies than competing materials and, by alloying with Al or In, the bandgap can cover both the visible and UV spectral range. [5] In addition, AlGaN/GaN heterostructures lead to the formation of a 2D electron gas (2DEG) at the AlGaN/GaN interface, which enables high-frequency switching devices. [6,7] Furthermore, due to the large breakdown voltage and thermal stability, GaN is the perfect candidate for high-power applications. [8,9] As a prerequisite for GaN-based power electronic devices, highly insulating buffers are required. [10,11] Here, carbon doping plays a major role to compensate for donor impurities, which occur even in nominally undoped GaN films. However, the role of carbon-related defects in heterojunction field effect transistors is multiple. They were shown to play a major role in the buffer transport mechanisms generally [12] and to contribute to current collapse [13,14] as well as a dynamical shift of the threshold voltage [11,15] in the devices.Advancements in the field of GaN growth resulted in bulk material of improved structural quality, often with dislocation densities below 10 6 cm À2 . [16,17] As a consequence, the influence of point defects as a limiting factor of device performance is gaining importance. [18][19][20] Therefore, a better understanding of point defects in GaN is required to improve device performance further and to control unwanted side effects.To study optically active point defects in semiconductors, photoluminescence (PL) is one of the experimental techniques most frequently used. The impact of carbon on the luminescence properties is, without doubt, one of the most debated subjects related to point defects in GaN. Although those discussions reach back more than 40 years, [21] considerable progress in the understanding of carbon-related point defect levels was made in the last decade.Two main factors greatly improved the understanding of carbon-related defect levels in GaN. On one hand, the implementation of hybrid functionals in density functional theory (DFT) accounts for carrier localization at acceptor species. This led to vast changes in the predicted energy values of charge state

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Section: High C Concentration: Carbon On Ga Site -C Gasupporting

confidence: 82%

Section: High C Concentration: Carbon On Ga Site -C Gamentioning

confidence: 99%

Current Status of Carbon‐Related Defect Luminescence in GaN

Zimmermann

Beyer

Röder

et al. 2021

Physica Status Solidi (a)

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“…Recent findings even show that the intrinsic incorporation of carbon in GaN may not be stable and changes of lattice places from C N to C Ga may take place even at growth temperatures. [33] From the complexity of the role of carbon in GaN, one may conclude that iron could be the generally better choice to achieve semi-insulating behavior in GaN, because it is incorporated at a unique lattice site as Fe Ga being an acceptor about 0.6 eV below the conduction band. [28] However, also iron has its challenges because diffusion of iron from iron-doped GaN to non-doped GaN layers during MOVPE was observed.…”

Section: Discussionmentioning

confidence: 99%

Growth and Properties of Intentionally Carbon‐Doped GaN Layers

Richter

Beyer

Zimmermann

et al. 2019

Crystal Research and Technology

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Carbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a maximum of specific resistivity of 2 × 10 10 cm at room temperature found for a carbon concentration of 8.8 × 10 18 cm −3 . For higher carbon levels up to 3.5 × 10 19 cm −3 , a slight increase of the conductivity is observed and related to self-compensation and passivation of the acceptor. The acceptor can be identified as C N with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri-carbon defects, C N -a-C Ga -a-C N and C N -a-C Ga -c-C N , are identified which probably compensate about two-thirds of the carbon which is incorporated in excess of 2 × 10 18 cm −3 .

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“…29 Carbon impurities arise from the incomplete methyl desorption of TMG and are introduced into GaN films in the growth process. 30,31 Combined with the experimental and characterization results, the chemical reaction mechanism was proposed for the GaN growth in the warm-wall MOCVD system. The schematic diagram of chemical reactions is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…29 Carbon impurities arise from the incomplete methyl desorption of TMG and are introduced into GaN films in the growth process. 30,31…”

Section: Resultsmentioning

confidence: 99%