Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes

The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE

“…The bandgap of an InGaN alloy can vary from 3.4 eV (365 nm) to 0.65 eV (1.9 µm), a range which spans the entire visible spectrum. Actually with the increasing of In content, the electro-optical performance of nitride LEDs on c-plane sapphire becomes worse [1][2][3][4][5]. Some groups have found that larger polarization-related piezoelectric fields exist in LEDs along the c-axis of the sapphire substrate, which significantly affects the internal quantum efficiency (IQE) of the device and generates an undesirable blue-shift of the emission wavelength [6][7][8][9].…”

“…Some groups have found that larger polarization-related piezoelectric fields exist in LEDs along the c-axis of the sapphire substrate, which significantly affects the internal quantum efficiency (IQE) of the device and generates an undesirable blue-shift of the emission wavelength [6][7][8][9]. Fortunately, the substitution of non-polar or semi-polar planes with lower internal piezoelectric fields for the polar c-planes in LED or LD substrates has been found to improve their optical 3 properties [10][11][12][13][14][15][16][17][18][19][20][21][22]. Sato [20], and a semi-polar ) 1 2 20 ( plane has also been investigated as a substrate in LDs and LEDs [15].…”

Single phase {112¯2} GaN on Ploch1, Park2, Stellmach3 et al. 2011Journal of Crystal Growth241210View full textAdd to dashboardCite

“…This is partly caused by the increasing lattice mismatch between InGaN and GaN as well as the lower growth temperature for InGaN layers leading to a degradation of the crystal quality [3]. Furthermore strong polarization fields across the QWs result in a separation of the QW electron and hole wave functions [4], and consequently in increased radiative lifetimes.…”

Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies

“…More detailed information about the growth conditions can be found elsewhere. 11 AFM surface inspection was done with a Digital Nanoscope 3 system in tapping mode. Average layer thicknesses and indium concentrations of both QW and barrier layers were determined by HRXRD from comparison of X/2H scans collected using a PANalytical X'Pert system with simulations using Epitaxy software.…”