The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE

Wang, Yaxin; Shimma, Rika; Yamamoto, Tomohiko; Hayashi, Hideki; Shiohama, Ken Ichi; Kurihara, K.; Hasegawa, Ryuichi; Ohkawa, Kazuhiro

doi:10.1016/j.jcrysgro.2015.01.028

Cited by 23 publications

(29 citation statements)

References 26 publications

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“…Excluding the data for these two lower growth rate planes, the minimum to maximum variation is only ~4.3%. Our result that the growth rate is essentially constant on the various planes is consistent with those of Wernicke et al [21], Jonen et al [22][23] and Wang et al [25], who studied a much more limited number of planes. …”

Section: Growth Ratesupporting

confidence: 93%

“…This is consistent with the results in references 14-16. Additionally, the variation of indium content with tilt angle between the c-and m-planes is qualitatively consistent with the data of Enya et al [26] and Wang et al [25], although there are some differences in the relative incorporation. Moreover, our data for the relative indium incorporation on (20)(21) and planes is consistent with that of Zhao et al [20].…”

Section: Indium Contentsupporting

confidence: 91%

“…We find that the variation of PL wavelength with tilt angle for the a-and m-family of planes reflects well the trend in indium content variation, in contradiction to the findings of Wernicke et al [21] and Jonen et al [22][23]. In addition, the indium content variation we obtained for the m-family of semipolar planes is qualitatively similar to the results presented by Enya et al, in Figures 14 and 25 of their US patent application [26] and that of Wang et al [25].…”

Section: Introductioncontrasting

confidence: 60%

“…They showed that the enthalpy change for the decomposition of the N-H layer is consistent with the relative indium incorporation, reported in the literature, on (0001), (000-1), (10)(11), (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and planes. Very recently, Wang et al [25] have studied the indium incorporation in (0001), (000-1), (10)(11), (10)(11)(12), (20)(21), and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN using x-ray analysis. They compared the indium incorporation and epitaxial layer morphology at two indium contents (18% and 24% on (0001), obtained by changing the flow of ammonia and flow velocity).…”

Section: Introductionmentioning

confidence: 99%

“…Whereas going from lower to higher indium conditions increased the indium incorporation in most planes, there was no change in indium content on (10)(11)(12) or (000-1), as if the lower indium content were a saturation value. Wang et al [25] interpreted the data as showing that the relative indium incorporation on various substrate orientations can depend on the indium content.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Experimental study of the orientation dependence of indium incorporation in GaInN

Bhat

Guryanov

2016

Journal of Crystal Growth

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Section: Growth Ratesupporting

confidence: 93%

Section: Indium Contentsupporting

confidence: 91%

Section: Introductioncontrasting

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Experimental study of the orientation dependence of indium incorporation in GaInN

Bhat

Guryanov

2016

Journal of Crystal Growth

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Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Wang

Bertram

et al. 2020

Advanced Optical Materials

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Color‐tunable InGaN/GaN multi‐quantum‐well (MQW) light‐emitting diodes (LEDs) are reported based on GaN microfacet structure directly grown on c‐plane patterned sapphire substrate by metal organic vapor phase epitaxy (MOVPE) through promoting 3D growth. By adjusting GaN growth temperature and pattern arrangement, a GaN microfacet with almost pure {10true1¯1} semipolar facets is obtained. The multifacetted InGaN/GaN MQW LED chip evolves three distinct emission peaks around 630, 530, and 450 nm in electroluminescence (EL) as injection current increases from 1 to 100 mA. The EL behavior originates from locally different facets of the complex 3D structure: MQWs grown on c‐planes and semipolar facets, respectively, which is confirmed by cathodoluminescence characterization in a scanning transmission electron microscope (STEM‐CL). Considering the dependence of emission wavelength and intensity on injection currents, a programmable power supply is designed to drive the LED. The specific color of the LED is tuned by time‐shared driving of the currents based on three channels with controllable magnitudes and duty cycle from the power supply, covering red, yellow, green, cyan, blue, and purple. Furthermore, white LEDs with high color rendering index (CRI) up to 96.1 and correlated color temperature (CCT) between 4000 and 10 000 K are achieved.

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Complete orientational access for semipolar GaN devices on sapphire

Leung

Wang

Kuo

et al. 2015

Physica Status Solidi (b)

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Semipolar (202¯1) GaN light‐emitting diodes and (202¯1¯) GaN films are demonstrated on sapphire substrates. The processes developed here embody all the required steps in order to produce planar semipolar devices on sapphire substrates with complete control of the crystallographic orientation. Theoretical and experimentally observed aspects of semipolar materials and devices on bulk substrates are reviewed, including device performance and orientation‐dependent material properties. This summary motivates the use of particular semipolar orientations having Miller indices (hkil), with l < 0, such as (202¯1¯) and (303¯1¯). These orientations have not, as of yet, been shown to be obtained using sapphire substrates. With the appropriate nitridation and buffer layer growth condition on stripe‐patterned sapphire, high quality single crystal (202¯1¯) GaN films have been achieved. Demonstration of surface planarization, device layer regrowth, and LED operation, performed here on semipolar (202¯1¯) GaN, detail the processes to enable planar semipolar‐based devices on sapphire with these unique orientations. With these advances, the required foundation has been put into place to allow access to the potentially highest performance semipolar planes while using economically feasible, large area sapphire substrates. Processes to produce (202¯1) LED devices (top left) on GaN films grown on full 2″ sapphire substrates (bottom left) are described in this paper. The achievement of (202¯1¯) GaN paves the way toward achieving full orientational access on sapphire substrates (right).

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The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE

Cited by 23 publications

References 26 publications

Experimental study of the orientation dependence of indium incorporation in GaInN

Experimental study of the orientation dependence of indium incorporation in GaInN

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Complete orientational access for semipolar GaN devices on sapphire

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