Influence of phosphorus enrichment at grain boundaries on energy of intergranular fracture in Fe–Si–P alloys

Abstract

Auger electron spectroscopy (AES) of in situ fractured samples was used to determine the grain boundary concentrations of phosphorus and silicon in polycrystalline Fe-Si-P alloys annealed at 800°C for 100 h. These measurements were supplemented by mechanical testing and evaluation of fracture surfaces to obtain values of the energy of intergranular fracture. The effect of segregated phosphorus on the energy of intergranular fracture is discussed.

Geometrical Shielding Produced by Intergranular Crack-Tip Branching in Fe–V–P Alloy

“…( 3). In our previous studies on phosphorus segregation in Fe-Si-P and Fe-V-P alloys [7,[13][14][15][16][17], the roomtemperature value of K Ici at P-segregated GBs was found to be very low and comparable with the fracture resistance of cleavage facets at very low temperatures. However, the secondary cracks identifying the splitting of the main crack front preferentially at triple junctions can also be observed.…”

Influence of Phosphorus Grain Boundary Segregation on Fracture Behaviour of Iron-Base Alloys

“…Besides the above elements, phosphorus was also detected on intergranular facets. The grain boundary concentrations of phosphorus (X P S ) and silicon (X Si S ) were determined according to the procedure proposed by Lejček [4,9].…”

“…With intention to characterize the particular effects of both processes, simple alloys consisting of single polymorphous phase have been investigated. For instance, the single-phase Fe-Si alloys [3,4] or austenitic stainless steels [5,6] are suitable materials for such investigations.…”