Influence of plasma-activated nitrogen species on PA-MOCVD of InN

Ahmad, Zaheer; Cross, Brendan; Vernon, M. W.; Gebregiorgis, Daniel; Deocampo, Daniel M.; Kozhanov, Alexander

doi:10.1063/1.5126625

Cited by 18 publications

(9 citation statements)

References 49 publications

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“…23 This demonstrates the importance of the plasma activation of the NH3 pulse. The utilization of plasma, affording more reactive N species, increases the growth rate 31 as well the crystalline quality of InN has previously also been reported in the literature, in both ALD 23 and CVD systems. 32 The plasma activation therefore seems paramount for the InN deposition at low temperature.…”

Section: Resultssupporting

confidence: 54%

On the dynamics in chemical vapor deposition of InN

Pedersen

Hsu

Deminskyi

et al. 2021

Preprint

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Epitaxial, nanometer-thin indium nitride (InN) films are considered as promising active layers in various device applications but remains challenging to deposit. We compare the morphological evolution and characterizations of InN films with various growth conditions in chemical vapor deposition (CVD), by both a plasma atomic layer deposition (ALD) approach and a conventional metalorganic CVD approach. Our results, and previous literature, show that a time-resolved precursor supply is highly beneficial for deposition of smooth and continuous InN nanometer-thin films. We show that the time for purging the reactor between the precursor pulses and low deposition temperature are key factors to achieve homogeneous InN. Our study suggests that 320 °C is the upper temperature where the dynamics of the deposition chemistry can be controlled to involve only surface reactions with surface species. The results highlight the promising role of the ALD technique in realizing electronic devices based on nanometer-thin InN layers.

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Section: Resultssupporting

confidence: 54%

On the dynamics in chemical vapor deposition of InN

Pedersen

Hsu

Deminskyi

et al. 2021

Preprint

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“…23 This demonstrates the importance of the plasma activation of the NH3 pulse. The utilization of plasma, affording more reactive N species, has been shown to increase the growth rate 31 as well the crystalline quality of InN in both ALD 23 and CVD systems. 32 The plasma activation therefore seems paramount for the InN deposition at low temperature.…”

Section: Resultsmentioning

confidence: 99%

On the dynamics in chemical vapor deposition of InN

Hsu

Deminskyi

Persson

et al. 2021

Preprint

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Epitaxial, nanometer-thin indium nitride (InN) films are considered as promising active layers in various device applications but remains challenging to deposit. We compare the morphological evolution and characterizations of InN films with various growth conditions in chemical vapor deposition (CVD), by both a plasma atomic layer deposition (ALD) approach and a conventional metalorganic CVD approach. Our results show that a time-resolved precursor supply is highly beneficial for deposition of smooth and continuous InN nanometerthin films. The time for purging the reactor between the precursor pulses and low deposition temperature are key factors to achieve homogeneous InN. The gas exchange dynamics of the reactor is further studied using computational fluid dynamics (CFD). According to our study, 320 °C is found the upper temperature where the dynamics of the deposition chemistry can be controlled to involve only surface reactions with surface species. The results highlight the promising role of the ALD technique in realizing electronic devices based on nanometer-thin InN layers.

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“…[28] SiO 2 (PE-ALD) [7,24,25] β-Ga 2 O 3 (PE-ALD) [38] Silicon nitride (PE-ALD) [22,23,27,31,37,40] Plasma treatment (PE-ALD) [26] Electron treatment (CVD based) [36,39] GaN (CVD based) [42,44,45,55] InN (CVD based) [41][42][43]45,47,48,53,57,58] InGaN (CVD based) [49,51,54,56] InN nanopillars (CVD based) [46,50,52,55] The oxygen contamination overview provided in this introduction is followed by an experimental examination of some effects related to the surface modification of cathode materials by the generated plasma. In particular, we examine changes that have been observed for aluminum and stainless-steel cathodes.…”

Section: Materials (And Process) Referencementioning

confidence: 99%

“…For the transition from 35 to 50 mm, the expected decrease in electron density was evident. At a greater distance of 50 mm from the plasma source, many of the features seen closer dissipated, particularly at higher pressures, due to the increased number of collisions of the electrons and ions generated; this would probably result in a high flux of neutral radicals, though these are not detected by a Langmuir probe (optical emission spectroscopy measurements by a Georgia State University group have shown a high density of neutral radicals downstream of a hollow cathode plasma source [57]).…”

Section: Pressure Range Langmuir Probe Measurementsmentioning

confidence: 99%

Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes

Butcher

Georgiev²,

Georgieva³

2021

Coatings

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Recent designs have allowed hollow cathode gas plasma sources to be adopted for use in plasma-enhanced atomic layer deposition with the benefit of lower oxygen contamination for non-oxide films (a brief review of this is provided). From a design perspective, the cathode metal is of particular interest since—for a given set of conditions—the metal work function should determine the density of electron emission that drives the hollow cathode effect. However, we found that relatively rapid surface modification of the metal cathodes in the first hour or more of operation has a stronger influence. Langmuir probe measurements and hollow cathode electrical characteristics were used to study nitrogen and oxygen plasma surface modification of aluminum and stainless-steel hollow cathodes. It was found that the nitridation and oxidation of these metal cathodes resulted in higher plasma densities, in some cases by more than an order of magnitude, and a wider range of pressure operation. Moreover, it was initially thought that the use of aluminum cathodes would not be practical for gas plasma applications, as aluminum is extremely soft and susceptible to sputtering; however, it was found that oxide and nitride modification of the surface could protect the cathodes from such problems, possibly making them viable.

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Influence of plasma-activated nitrogen species on PA-MOCVD of InN

Cited by 18 publications

References 49 publications

On the dynamics in chemical vapor deposition of InN

On the dynamics in chemical vapor deposition of InN

On the dynamics in chemical vapor deposition of InN

Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes

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