Influence of plasma treatment conditions on growth and electrical properties of oxides on InP

Bouziane, Amal; Remy, M.; Ouennoughi, Z.; Simon, Ch.; Alnot, M.

doi:10.1016/0257-8972(93)90067-x

Cited by 5 publications

(1 citation statement)

References 8 publications

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“…Using SIMS analysis He et al [24] showed that an increase in the barrier height is due to the formation of a layer composed with oxygen and phosphorus such as P 2 O 5 betwen Au and InP. Bouziane et al [25] have obtained 0.87 eV in the case of Ta 2 O 5 deposited on n-InP by multipolar plasma.…”

Section: Current-voltage Measurementsmentioning

confidence: 99%

Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature

Hbib

Bonnaud

Fortin

1997

Semicond. Sci. Technol.

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A new insulator film, PO x N y , has been fabricated using a vapour transport technique for use as an MIS interfacial layer on an n-InP substrate. This layer is obtained directly from phosphorus oxynitride (PON) solid sample. MIS diodes were made with the insulator deposited at 280 • C and have been studied using current-voltage and capacitance-voltage characteristics. The modified thermionic emission (TE) theory can be used to explain the conduction mechanism on the Au-PO x N y -(n)-InP MIS diode. The ideality factor and the barrier height are found to be equal to 2 and 0.67 eV respectively. In the Richardson plot, better linearity was observed when ln(I s /T 2 ) was plotted versus 1/nT than versus 1/T . The mean barrier height χ, and the barrier height at 0 K, qφ B 0 , are found to be equal to 0.24 and 0.59 eV respectively. The relative permittivity ε i of the insulator evaluated at room temperature from high-frequency capacitance measurement is equal to 7.8.

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Section: Current-voltage Measurementsmentioning

confidence: 99%

Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature

Hbib

Bonnaud

Fortin

1997

Semicond. Sci. Technol.

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show abstract

Determination of interface state density on Au/Ta2O5/n-InP structures by different methods

Boulkroun¹,

Ouennoughi²,

Bouziane³

et al. 1994

Materials Science and Engineering: B

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Influence of oxygen plasma on electrical and physical parameters of Au–oxide–n-InP structures

Touhami

Ravelet²,

Yagoub

et al. 2003

Journal of Applied Physics

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This article reports on the electrical properties of Au–oxide–n-InP structures obtained by oxygen plasma oxidation and its influence on the conduction mechanism. A discussion on the evolution of the electrical and physical parameters according to the oxidation conditions is presented. We observed that the treatment time and the plasma power strongly influence the parameters, namely, the tuning coefficient, the barrier height at 0 K, the barrier lowering at zero bias, the correct value of the Richardson constant, the dielectric constant, the oxide capacitance, and the oxide thickness. Moreover, in accordance with the current–voltage–temperature measurements, the electrical and physical parameters describing the Au–oxide–n-InP structures depend significantly on the treatment parameters characterizing the oxygen plasma. The results obtained establish the relationships between the parameters of the conduction mechanism and oxidation conditions.

show abstract

Influence of plasma treatment conditions on growth and electrical properties of oxides on InP

Cited by 5 publications

References 8 publications

Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature

Electrical characteristics of (n)-InP MIS diodes with a interfacial layer deposited at low temperature

Determination of interface state density on Au/Ta2O5/n-InP structures by different methods

Influence of oxygen plasma on electrical and physical parameters of Au–oxide–n-InP structures

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