Influence of preamorphization and recrystallization on indium doping profiles in silicon

Abstract

Articles you may be interested inStudy of millisecond laser annealing on recrystallization, activation, and mobility of laser annealed SOI doped via arsenic ion implantation Fluorine-enhanced boron diffusion in germanium-preamorphized silicon J. Appl. Phys. 98, 073521 (2005); 10.1063/1.2084336 Erbium-implanted silicon-germaniumThe effect of preamorphization and solid-phase epitaxial regrowth on indium doping profiles in silicon has been investigated. It is shown that preamorphized silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. During recrystallization by thermal annealing, indium segregates in front of the moving amorphous/ crystalline interface, creating a clearly visible peak in the doping profile. We establish that the physical mechanism for this phenomenon in the 10 18 -10 19 cm Ϫ3 concentration range is segregation determined, as there is no significant concentration dependence for those doses studied in this work. We also demonstrate that this phenomenon is enhanced at lower temperatures.

Impurity redistribution due to recrystallization of preamorphized silicon

“…Much of the data presented here is a followup to our previous work 13 where we demonstrated that approximately 10% of the indium profile dose was redistributed, in the 10 18 -10 19 cm −3 concentration range, due to recrystallization at 600°C. Much of the data presented here is a followup to our previous work 13 where we demonstrated that approximately 10% of the indium profile dose was redistributed, in the 10 18 -10 19 cm −3 concentration range, due to recrystallization at 600°C.…”

“…In our previous work, 13 indium was observed to redistribute during recrystallization in the 10 18 -10 19 cm −3 concentration range. In our previous work, 13 indium was observed to redistribute during recrystallization in the 10 18 -10 19 cm −3 concentration range.…”

Continuum modeling of implantation and thermal processes for advanced devices formation

“…In non-amorphized regions, the activation of dopants is smaller, and the concentration of point defects is very high. However, several effects related to SPER such as the dopant snow plow effect [27] and diffusion in amorphous Si [28] are ignored.…”

“…Indium profiles after implantation into ~100 nm deep preamorphized Si (black) and after SPER at different temperatures. SIMS results [27] (dashed lines) are compared to simulation results (lines) obtained with Sentaurus Process [4] and the calibrated model for dopant diffusion and redistribution during SPER [18] [25]. During SPER, indium is pushed towards the surface.…”