Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ions

Hazdra, P.; Komarnitskyy, V.

doi:10.1016/j.mseb.2008.10.008

Cited by 8 publications

(17 citation statements)

References 9 publications

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“…Acceptor-like defect states recently have been analyzed in oxygen-rich FZ Si, too [14]. Acceptor-like defect states recently have been analyzed in oxygen-rich FZ Si, too [14].…”

Section: Resultsmentioning

confidence: 99%

“…Acceptor-like defect states recently have been analyzed in oxygen-rich FZ Si, too [14]. In [14], acceptor-like defect complexes were observed by DLTS measurements, i. e. the vacancy-oxygen pair VO with an acceptor level and the divacancy V 2 with a single-and double-acceptor level(s). Hence, the situation was quite similar to our experimental conditions; however, it is important to keep in mind that under our process conditions, hydrogen also plays a major role.…”

Section: Resultsmentioning

confidence: 99%

“…The samples studied in [14] were implanted by He + -ions at lower fluences (1×10 10 -3×10 11 cm -2 ) and annealed at temperatures up to 410 °C. The so-called A3 and A6 levels observed in the DLTS spectra, corresponded to the single-and double-acceptor levels V 2 O −/0 and V 2 O =/− , respectively [14,15]. In [14], acceptor-like defect complexes were observed by DLTS measurements, i. e. the vacancy-oxygen pair VO with an acceptor level and the divacancy V 2 with a single-and double-acceptor level(s).…”

Section: Resultsmentioning

confidence: 99%

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Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

et al. 2009

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The formation and evolution of hydrogen-and vacancy-related donor and acceptor states were studied in helium-implanted and subsequently hydrogen plasma-treated n-type Float-Zone (FZ) silicon wafers by means of two-point-probe Spreading Resistance (SR) measurements. He +implantation was executed at 3.75 MeV and 11 MeV at fluences of 1×10 14 cm -2 . Post-implantation 13.56-MHz RF-plasma hydrogenations were carried out at 150 W either for 15 min or 1 hour, applying substrate temperatures between 350 °C and 500 °C. Enhanced donor concentrations as well as acceptor-like states were observed in the subsurface layers of the treated FZ Si samples after 15-min post-implantation H-plasma exposures. Under appropriate process conditions, the latter ones compensated for the n-type doping, so that even buried p-type layers were created. The experimental results indicated that oxygen played a central role in the formation of the acceptor-like states.

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“…Acceptor-like defect states recently have been analyzed in oxygen-rich FZ Si, too [14]. Acceptor-like defect states recently have been analyzed in oxygen-rich FZ Si, too [14].…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

et al. 2009

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“…The parameters of the implantation-induced centers presented in Table 2 are close to those found in previous studies (see, e.g., Refs. [22,23,34]) for irradiation-induced defects in Si irradiated with electrons, protons and He ions. It is very likely that multi-vacancy clusters are also formed and their DLTS signals overlap with a signal from the first acceptor level of divacancy with a maximum at about 227 K. In the annealing temperature range 250-300°C annealing of divacancies occurs.…”

Section: Parameters Of the Diodes And Basic Irradiation-induced Defectsmentioning

confidence: 99%

“…The influence of irradiation with protons and ions on these parameters is quite well studied (see, e.g., Refs. [3,[8][9][10]17,22,23] and references therein). Capacitance of the implanted diodes (particularly, capacitance of a pn junction) has rarely been a subject of a separate research because of various reasons.…”

Section: Introductionmentioning

confidence: 99%

Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

Poklonski¹,

Горбачук²,

Shpakovski³

et al. 2010

Microelectronics Reliability

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DLTS characterization of proton‐implanted silicon under varying annealing conditions

Laven

Jelinek

Job

et al. 2014

Physica Status Solidi (b)

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Deep-level defects remaining in the upper half of the band-gap of silicon implanted with protons at fluences and annealing temperatures typically used for proton-implantation doping are investigated. For proton fluences in the range of several 1013 cm−2 to several 1014 cm−2, a multitude of deep-level defects remain active in comparatively high concentrations of up to 1013 cm−3 even after anneals at temperatures up to 500 °C. The detected deep-levels are assigned to known lattice defects on the basis of their electrical characteristics obtained by Fourier-transform DLTS measurements. Despite the low oxygen content of the float-zone silicon used, a large number of the detected defects are ascribed to (non-)hydrogenated vacancy-oxygen defects. The annealing temperature ranges, in which the deep-level defects were detected, are shown. Furthermore, the dependencies of the deep-level defects on the proton fluence and their depth distributions in the implantation profile are investigated

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Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ions

Cited by 8 publications

References 9 publications

Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

DLTS characterization of proton‐implanted silicon under varying annealing conditions

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