Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon

Abstract

This letter reports the electrical characteristics of 1.5 μm RuO x -gate Al x Ga 1-x N/GaN high electron mobility transistors (HEMTs) on a 200-mm diameter Si(111) substrate subjected to gate annealing in the temperature range of 600 -900 • C. The electrical characteristics of HEMTs do not change significantly up to an annealing temperature of 800 • C. The maximum g m and I DSAT are 0.197 S/mm and 0.55 A/mm, respectively, when annealed at 700 • C. The ON-OFF current ratio of > 10 7 and a sub-threshold swing of 90 mV/decade in HEMTs annealed up to 800 • C showcase the crystalline quality of Al x Ga 1-x N/GaN HEMT structure with good electrical contacts.

Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

“…Nevertheless, the contact resistance value of our Ti/Al/NiV scheme is still comparable to other reported results. 13,[23][24][25][26] Based on the optimized source/drain Ohmic contacts, the Schottky gate is then fabricated using Ni/Al (20/200 nm) metal layers. Figure 8(a) shows the I-V characteristics of Ni/ Al Schottky diode.…”

“…In addition, these AlGaN/GaN HEMT devices demonstrate excellent I ON /I OFF ratio $ 3 Â 10 9 (with a subthreshold swing (SS) of $71 mV/decade), which is comparable or even higher than previous reports. 25,34,35 Such device performance is favorable for high-speed power switching applications. As shown in Fig.…”

Effects of Annealing Pressure and Ambient on Thermally Robust RuOx Schottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure

“…III-nitride based diodes and high electron mobility transistors (HEMTs) are serious challengers to Si based electronics for high frequency and high power applications owing to their wide bandgap, high two dimensional electron gas (2DEG) and good thermal stability (1)(2)(3)(4). In addition, the integration of III-nitride grown on Si(111) with Si-based complementary metal oxide semiconductor (CMOS) compatible processes for power electronic applications reduces the cost of device fabrication processes and increases the competitiveness with Si based counterparts (5)(6)(7). However, traditional Ni/Au based Schottky contacts used as the anode in III-nitride Schottky diodes and the gate contact in HEMTs have high leakage current, low thermal stability and are not CMOS compatible which limit the capability of III-nitride based devices.…”

Annealing Pressure and Ambient Dependent RuOxSchottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure

“…[1][2][3][4] With the integration of III-nitrides grown on Si(111) and coupled with the development of Si-based complementary metal oxide semiconductor (CMOS) compatible fabrication processes, low cost and high performance GaN based transistors could be realized, increasing their competitiveness with Si based counterparts. [5][6][7] However, the conventional Schottky contacts (Ni/Au) used as the anode in GaN based Schottky diodes and the gate electrode in HEMTs have high leakage current, and low thermal stability. In addition, they are not CMOS compatible which limit the capability of GaN based devices.…”