Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes

Abstract

The influence of self-heating on the millimeter-wave (mm-wave) and terahertz (THz) performance of double-drift region (DDR) impact avalanche transit time (IMPATT) sources based on silicon (Si) has been investigated in this paper. The dependences of static and large-signal parameters on junction temperature are estimated using a non-sinusoidal voltage excited (NSVE) large-signal simulation technique developed by the authors, which is based on the quantum-corrected drift-diffusion (QCDD) model. Linear variations of static parameters and non-linear variations of large-signal parameters with temperature have been observed. Analytical expressions representing the temperature dependences of static and large-signal parameters of the diodes are developed using linear and 2nd degree polynomial curve fitting techniques, which will be highly useful for optimizing the thermal design of the oscillators. Finally, the simulated results are found to be in close agreement with the experimentally measured data.

Improvement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices

“…AlGaN/GaN heterojunctions were first born in the 1990s and were successfully prepared on sapphire substrates by metal organic chemical vapor deposition (MOCVD) in a study by [5]. A year later, the first GaN-based HEMT device was developed by [6]. In recent years, GaN-based HEMT devices have become a research hotspot in the semiconductor industry due to the rise of 5G technology.…”

Impact of Junction Temperature on High-Frequency Performance of Double avalanche Region IMPATT Oscillator

“…BP (5) [Sm -2 ] BP (6) [Sm -2 ] 300 3.76x10 7 5.92x10 7 ηL (%) (1) ηL (%) (2) ηL (%) (3) ηL (%) (4) Fig. 4 exhibits the received experimental RF output of different semiconductor based DDR IMPATTs, reported earlier [10][11][12][13][14][15][16][17] with the computed RF output power of the mm-wave DAR Si IMPATTs.…”

“…Recently S.J. Mukhopadhyay et al [5] highlighted the effect of temperature on the static and high-frequency properties of DDR Si IMPATTs at mm-wave and THz frequencies. Whenever the progress of IMPATTs picked up steam in the latter half of the 20th century, fabrication was mostly carried out using the semiconducting materials germanium (Ge) and silicon (Si).…”