Influence of SiC technology in a railway traction DC-DC converter design evolution

Rujas, Alejandro; López, Víctor Manuel Cuesta; Garcia-Bediaga, Asier; Berasategi, A.; Nieva, Txomin

doi:10.1109/ecce.2017.8095885

Cited by 31 publications

(22 citation statements)

References 14 publications

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“…Regarding the inductor design, the magnetic materials of the inductor core and the winding type are two key factors, which significantly contribute to the weight, volume, power losses of an inductor. Table A2 in Appendix A lists different magnetic core materials used for a multiphase bidirectional converter in EV drivetrains [29] and railway traction [30]. The suitable core material should exhibit high saturation flux, low loss, low cost, and low thermal resistance.…”

Section: Technology Selections Of Power Conversion Stagementioning

confidence: 99%

“…It can be observed that in automotive powertrains, the amorphous core attracts more interest since it has a suitable temperature, low core losses, and high saturation flux density of 1.5 T [29]. More importantly, the cost of amorphous cores is far cheaper than that of nanocrystalline cores [30]. Regarding the winding selection, compared to the solid-round wire, the Litz-wire conductor has multiple insulated-braided-parallel strands.…”

Section: Technology Selections Of Power Conversion Stagementioning

confidence: 99%

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NSGA-II-Based Codesign Optimization for Power Conversion and Controller Stages of Interleaved Boost Converters in Electric Vehicle Drivetrains

et al. 2020

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This article proposes a holistic codesign optimization framework (COF) to simultaneously optimize a power conversion stage and a controller stage using a dual-loop control scheme for multiphase SiC-based DC/DC converters. In this study, the power conversion stage adopts a non-isolated interleaved boost converter (IBC). Besides, the dual-loop control scheme uses type-III controllers for both inner- and outer- loops to regulate the output voltage of the IBC and tackle its non-minimum phase issue. Based on the converter architecture, a multi-objective optimization (MOO) problem including four objective functions (OFs) is properly formulated for the COF. To this end, total input current ripple, total weight of inductors and total power losses are selected as three OFs for the power conversion stage whilst one OF called integral of time-weighted absolute error is considered for the controller stage. The OFs are expressed in analytical forms. To solve the MOO problem, the COF utilizes a non-dominated sorted genetic algorithm (NSGA-II) in combination with an automatic decision-making algorithm to obtain the optimal design solution including the number of phases, switching frequency, inductor size, and the control parameters of type-III controllers. Furthermore, compared to the conventional ‘k-factor’ based controller, the optimal controller exhibits better dynamic responses in terms of undershoot/overshoot and settling time for the output voltage under load disturbances. Moreover, a liquid-cooled SiC-based converter is prototyped and its optimal controller is implemented digitally in dSPACE MicroLabBox. Finally, the experimental results with static and dynamic tests are presented to validate the outcomes of the proposed COF.

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Section: Technology Selections Of Power Conversion Stagementioning

confidence: 99%

Section: Technology Selections Of Power Conversion Stagementioning

confidence: 99%

NSGA-II-Based Codesign Optimization for Power Conversion and Controller Stages of Interleaved Boost Converters in Electric Vehicle Drivetrains

et al. 2020

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“…SiC devices are more efficient because of lower switching and conduction losses as compared to the Si and IGBT [6,7]. Table 1 provides the comparative analysis of electrical and thermal properties of Si and SiC devices [8][9][10][11]. Several studies have been carried out for efficiency comparison of Si and SiC MOSFETs based DC-DC converter.…”

Section: Introductionmentioning

confidence: 99%

Comparative efficiency analysis for silicon, silicon carbide MOSFETs and IGBT device for DC–DC boost converter

2019

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In present study, a comparative efficiency analysis for silicon (Si), silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) and insulated gate bipolar transistor (IGBT) device based DC-DC boost converter is performed. Due to different gate-drive characteristics of power semiconductor devices such as Si, SiC MOSFETs and IGBT device, different voltage levels are required to drive aforementioned devices. A 500 W boost converter for wide input voltage range (30-72 V) and 110 V output voltage is designed having a single gate driver circuit for Si, SiC MOSFETs and IGBT. A single gate driver provides the gate-source (or base-emitter in case of IGBT) signal for all the devices which eliminates the use of separate gate driver circuit. Si MOSFET and IGBT are driven by 12 V gate-source voltage whereas SiC MOSFET is operated by 18 V gate-source voltage using the gate driver circuit. An experimental study is performed for the comparative efficiency analysis for Si, SiC MOSFETs and IGBT device based converter for 20 and 50 kHz switching frequencies. It is found that SiC based converter provides highest efficiency ≈ 97.8%, whereas the lowest efficiency ≈ 94% is found for IGBT based converter at 20 kHz switching frequency. SiC based converter gives higher efficiency because lower conduction loss owning to lower on-state resistance as compared to Si MOSFET. Besides this, SiC application has another advantage such as low switching loss at higher frequency resulting compact size of converter. However, use of IGBT at higher switching frequency results in higher switching losses, hence lower efficiency of the converter.

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“…While SiC devices have already been put into practice for high power applications [3], the trend of GaN devices has been move from microwave solutions [4] to power applications with higher voltage requirements (> 200 V), in recent years. The interest of GaN-based transistors is mainly associated with the high electron mobility layer, also known as the twodimensional electron gas (2DEG).…”

Section: Introductionmentioning

confidence: 99%

Analysis of Optimal Operation Conditions for GaN-based Power Converters

Avila¹,

Garcia-Bediaga²,

Rodríguez

et al. 2018

2018 IEEE Energy Conversion Congress and Exposition (ECCE)

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The use of Gallium Nitride (GaN) devices allows breaking the performance barriers of conventional silicon-based (Si) low power converters by increasing the operating frequency while reducing system power losses. This paper evaluates the influence of the current ripple, switching frequency and number of GaN devices on the performance of a bi-directional buck converter. Furthermore, hard-switching and soft-switching operation modes are evaluated, identifying the optimal operation conditions for GaN-based power converters. Analytical and simulation models are employed and the obtained results are experimentally validated on a 3 kW GaN-based bi-directional buck converter.

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Influence of SiC technology in a railway traction DC-DC converter design evolution

Cited by 31 publications

References 14 publications

NSGA-II-Based Codesign Optimization for Power Conversion and Controller Stages of Interleaved Boost Converters in Electric Vehicle Drivetrains

NSGA-II-Based Codesign Optimization for Power Conversion and Controller Stages of Interleaved Boost Converters in Electric Vehicle Drivetrains

Comparative efficiency analysis for silicon, silicon carbide MOSFETs and IGBT device for DC–DC boost converter

Analysis of Optimal Operation Conditions for GaN-based Power Converters

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