Influence of silane flow rate on the structural and optical properties of GaN nanowires with multiple-quantum-shells

Sone, Naoki; Lu, Weifang; Miyamoto, Yoshiya; Okuda, Renji; Ito, Kazuma; Okuno, Koji; Mizutani, Koichi; Iida, K.; Ohya, Masaki; Han, Dong‐Pyo; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

doi:10.1016/j.jcrysgro.2021.126201

Cited by 3 publications

(7 citation statements)

References 29 publications

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“…0001) and (1-101) planes. One possible reason for the change in the NW height is that the height of the core is rather sensitive to the growth temperature [39] . However, the low height of NWs and the enlarged (1-101) plane region can lead to the redshift of the emission because of the high In incorporation rate [23,24] .…”

Section: Resultsmentioning

confidence: 99%

Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480 nm-LEDs

Katsuro

Nakayama

et al. 2023

Gallium Nitride Materials and Devices XVIII

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Suppressing the emission from (0001) plane region with low luminescence efficiency that exists on the top of nanowires (NWs) is necessary to realize highly efficient GaInN/GaN multi quantum shell (MQS) light-emitting diodes (LEDs). In this study, we attempted to improve the crystal growth by introducing electron blocking layers (EBLs) and to suppress the current leak in NW LEDs by using SiO2 insulating film on top of NWs. The EBL structure features different thicknesses at each crystalline plane to reduce the current injection into (0001) plane, suppress red emission with low luminescence efficiency, and improve the light output by 2.4 times. Given that the luminescence from (0001) plane region remains, further optimization of EBL growth conditions, such as V/III ratio and Al composition, is essential. In addition, the luminescence from (0001) plane region and the current leakage can be reduced by forming SiO2 insulating film on top of the NWs. Although even if an insulating film was formed on the top of NWs on which EBLs were grown, the SiO2 adhering to (1-101) plane resulted in a decrease in light output and destruction due to high resistance. The results indicate the possibility of realizing highly efficient GaInN/GaN MQS-NW LEDs by inserting EBL structures between MQS and p-GaN shell.

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Section: Resultsmentioning

confidence: 99%

Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480 nm-LEDs

Katsuro

Nakayama

et al. 2023

Gallium Nitride Materials and Devices XVIII

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“…The surface roughness of sample A can be due to the defect structure. [ 40 ] The tip region of NW‐MQS, composed of c ‐ and {10–11}‐plane, has a similar morphology as samples A and B, and has multiple V‐pits only in the c ‐plane region (Figure 2(a1,b1)). These V‐pits may be due to the TDs generated from the c ‐plane active layers.…”

Section: Resultsmentioning

confidence: 99%

“…A layer with a high Si peak between the NW and MQS is identified by the Si distribution in the EDS maps, which is probably due to the silicon nitride (SiN x ) formed on the m-plane of NWs. [40,44,45] Therefore, the defect structures in region (ii) may have been caused by the SiN x formed on the m-plane of the NWs. A high Si concentration is also detected at the TJ position.…”

Section: Structural Evaluation and Defect Distribution Analysis Of Th...mentioning

confidence: 99%

“…In the V-facet region, the first and second active layers on the m-plane of NW are discontinuous. [15,40] The third active layer has a relatively flat m-plane interface in which the V-facet is embedded. A V-facet structure may have been formed in the region where the growth of the m-plane active layer was inhibited.…”

Section: Analysis Of Defect Types In Nw-mqs Structure With Gan Cap La...mentioning

confidence: 99%

“…In contrast, there is almost no such surface roughness on the m-plane of MQS in sample B (Figure2(b2)). The surface roughness of sample A can be due to the defect structure [40]. The tip region of NW-MQS, composed of cand {10-11}-plane, has a similar morphology as samples A and B, and has multiple V-pits only in the c-plane region (Figure2(a1,b1)).…”

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confidence: 98%

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Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions

Okuno

Mizutani

Iida

et al. 2022

Physica Status Solidi (b)

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Herein, the growth mechanism and defect structure of GaN‐based nanowire multiple‐quantum‐shells (NW‐MQSs) with cap layers combining tunnel junctions and n‐GaN are investigated in detail. In the NW‐MQS structure, defect structures are formed in three regions: (i) From the c‐plane active layer at the tip of NW because of the low crystal quality of the active layer. (ii) Basal‐plane stacking faults (BSFs) with partial dislocations (PDs) are generated from the m‐planes of the NW‐MQSs; these defects are triggered by the silicon nitride (SiNx) formed on the NW surface. While some defects terminate because of the half loop formed by the PDs along the lateral growth of cap layers, others terminate at the coalesced region of the cap layers grown from adjacent MQSs. (iii) Line defects due to low‐angle grain boundaries and planar defects due to the BSFs in region (ii) are formed in the region wherein cap layers coalesce. The defects reaching the surface of the cap layers predominantly depend on the number of defects generated from the c‐plane active layers in region (i). The growth mode and propagation mechanism of such defects are associated, and a method for realizing optical devices based on the high‐quality NW‐MQS structures is discussed.

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Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire

Sone¹,

Jinno²,

Miyamoto³

et al. 2021

Jpn. J. Appl. Phys.

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This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising GaInN/GaN multiple-quantum-shells (MQSs) and GaN nanowires. To this end, the impurity, structural, and electrical properties of the samples were characterized by scanning electron microscopy, scanning transmission electron microscopy, atom probe tomography (APT), nanoscale secondary ion mass spectrometry (NanoSIMS), and electroluminescence of the device which was fabricated for a prototype laser device to demonstrate an electrical operation of the MQSs layer. From the experimental results of NanoSIMS and APT, we demonstrated that the Mg-related problems in the TJ, such as the diffusion to the n++-GaN layer from the p+-GaN layer and formation of clusters in p+-GaN, are critical. Consequently, they cause a high operating voltage and dot-like spot emission of the light-emitting device. Based on the analysis, we suggested remedies and strategies to further improve the TJs that work well.

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Influence of silane flow rate on the structural and optical properties of GaN nanowires with multiple-quantum-shells

Cited by 3 publications

References 29 publications

Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480 nm-LEDs

Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480 nm-LEDs

Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions

Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire

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