Influence of target grit count and sintering temperature on pulsed laser deposition of SiC thin films

Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films

“…A Q-switched Nd 3+ : YAG laser (Quantel, Brilliant) with a pulse width of 6 ns full width half maximum (FWHM) and a pulse repetition rate of 10 Hz was used. The third harmonic generation output wavelength of 355 nm 8 was used to ablate an SiC target, which was prepared using the plasma sintering technique. The laser wavelength of 355 nm results in short penetration depth in materials due to a high absorption coefficient of the order ranging around 10 6 cm −1 .…”

“…Figure 2 presents the variation in SiC film resistance, corresponding to the laser-doping fluence, at the probe voltage of 5 V. The resistance of the as-deposited intrinsic SiC film was very high in the order of 10 9 Ω, whereas the Si substrate resistance was in the order of 10 3 Ω. The resistance of the SiC film was varied from ≈10 8 Ω to ≈10 3 Ω as the laser fluence was varied from 0.5 J cm − 2 to 2.5 J cm − 2 . Around the laser fluence of 2.5 J cm − 2 , linear I–V characteristics with smaller resistance values of 10 3 Ω were obtained on the n- and p-type doped SiC films.…”

Selective area laser-assisted doping of SiC thin films and blue light electroluminescence

“…The PLD experimental setup similar to that reported elsewhere [27,28] was used for the growth of SiC thin films. A Q-switched Nd 3+ :YAG laser pulses of 355 nm wavelength, 6 ns pulse width and 10 Hz repetition rate was used for the laser ablation of a SiC target target (20 mm diameter × 5 mm thickness).…”