2019
DOI: 10.1116/1.5081919
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Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with in situ grazing incidence small-angle x-ray scattering

Abstract: The surface topological evolution during the growth of indium nitride (InN) by plasma-assisted atomic layer epitaxy (ALEp) on gallium nitride (GaN) (0001) substrates was studied using in situ real-time grazing incidence small-angle x-ray scattering (GISAXS) for 180, 250, and 320 °C growth temperatures. The GISAXS data reveal that the ALEp growth of InN on GaN in this temperature range proceeds in a Stranski–Krastanov mode, in which the 2D–3D transition occurred after 2.3 monolayers for 180 °C, 1 monolayer for … Show more

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Cited by 10 publications
(17 citation statements)
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“…4 d and e), the averaged diameter of InN crystal grains is 9 nm. This result is comparable to the value of InN grown by ALD using N2 plasma on GaN surface as reported by Woodward et al 44 A finite inter distance (smaller than 7 nm) between particles together with high particle density of 7.5×10 11 cm -2 indicates that the InN crystal grains are homogeneously distributed on the surface (Fig. 4c).…”
Section: Resultssupporting
confidence: 89%
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“…4 d and e), the averaged diameter of InN crystal grains is 9 nm. This result is comparable to the value of InN grown by ALD using N2 plasma on GaN surface as reported by Woodward et al 44 A finite inter distance (smaller than 7 nm) between particles together with high particle density of 7.5×10 11 cm -2 indicates that the InN crystal grains are homogeneously distributed on the surface (Fig. 4c).…”
Section: Resultssupporting
confidence: 89%
“…The particle-like surface feature is likely due to a Stranski-Krastanov growth mode where 3D growth takes over after a critical thickness of approximately 1 nm, which has been experimentally verified. 44 The particle density, particle size and distance between particles can be used to depict the distribution of adsorbed In-species on the surface, which changes with time, reflecting their mobility. According to our analysis, the average particle size increases from 5 nm to 16 nm (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…4 d and e), the averaged diameter of InN crystal grains is 9 nm. This result is comparable to the value of InN grown by ALD using N2 plasma on GaN surface as reported by Woodward et al 41 A finite inter distance (smaller than 7 nm) between particles together with high particle density of 7.5×10 11 cm -2 indicates that the InN crystal grains are homogeneously distributed on the surface (Fig. 4c).…”
Section: Resultssupporting
confidence: 89%
“…In fact, our ALD work was done in a temperature range higher than the typical InN ALD window of 150-300 °C. 21,22,[38][39][40][41] Considering the difference in film deposition observed in Figs. 1 and 2 at different temperatures and the thermal stability of TMI, our ALD of InN is likely to involve several In-species.…”
Section: Resultsmentioning
confidence: 99%
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