Influence of the annealing temperature on the properties of undoped indium oxide thin films obtained by the sol–gel method

Flores-Mendoza, M.A.; Castanedo‐Pérez, R.; Torres‐Delgado, G.; Márquez‐Marín, J.; Zelaya-Ángel, O.

doi:10.1016/j.tsf.2008.07.036

Cited by 46 publications

(13 citation statements)

References 18 publications

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“…A plot of the square of absorption coefficient (a 2 ) against photon energy (hn) (figure not shown) gives a value of 3.72 eV as the band gap of F-In 2 O 3 . This value is higher than the one observed by us for undoped In 2 O 3 [1]. Maruyama and Fukui [27] found for their undoped and fluorine-doped In 2 O 3 films deposited by the CVD technique a lower value of band gap (3.5 eV).…”

Section: Resultscontrasting

confidence: 58%

“…In recent years, the growth and characterization of indium oxide (In 2 O 3 ) materials have been widely studied [1][2][3], mainly for application in developing short-wavelength optoelectronics devices. In 2 O 3 is an important n-type semiconductor material with wide band gap (direct band gap energy of 3.55-3.75 eV), good chemical stability, good electrical conductivity and high transmittance in the UV-vis region [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells

Hichou

Addou²,

Mansori³

et al. 2009

Solar Energy Materials and Solar Cells

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Section: Resultscontrasting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells

Hichou

Addou²,

Mansori³

et al. 2009

Solar Energy Materials and Solar Cells

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“…Electrical properties of the In 1.92 Fe 0.08 O 3 thin films were analysed by a Hall Effect Measurement System and the connections were done by the Van der Pauw method. The measurements were carried out in room temperature (29°C) and a dark atmosphere to prevent the photoconductive effect as it will affect the accuracy of measurements (Flores-Mendoza et al 2008;Lau et al 2015). Figure 9 shows that the resistivity of In 1.92 Fe 0.08 O 3 thin films decreases and the carrier concentration increases with increasing hydrogen flow rates.…”

Section: Resultsmentioning

confidence: 99%

Influence of Hydrogen Flow Rates Annealing on the Structural, Optical, and Electrical Properties of Sol-Gel Synthesized Fe doped In2O3 Films

Ibrahim¹,

Zulkifli

Lau

et al. 2019

JSM

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Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In 1.92 Fe 0.08 O 3 thin films were prepared by a sol-gel method and followed by a spin coating technique. Different flow rates of hydrogen gas were applied during the annealing process. All samples showed high orientation along the (222) direction and exhibit a polycrystalline structure. Grain size increased as the flow rate increased due to the stronger reduction of H 2 . FTIR studies showed the existence of an O-H bond in the range of 3000 -4000 cm -1 and it was caused by the flow of H 2 gas during the annealing process. The resistivity of In 1.92 Fe 0.08 O 3 thin films decreased and the carrier concentration increased with increasing hydrogen flow rates. This work has significance on the size-dependent properties and the chemical bonding in Fe doped In 2 O 3 films. Keywords: FTIR; H 2 gas flow rate; iron doped indium oxide; thin film ABSTRAK Semikonduktor magnetik cair (DMSs) sentiasa menjadi tarikan utama untuk dikaji disebabkan penggunaannya yang meluas dalam spintronik. Kajian ini dijalankan untuk mengkaji kesan perbezaan aliran gas hidrogen sepuh lindap pada sifat fizikal filem Fe terdop indium oksida. Filem In 1.92 Fe 0.08 O 3 telah disediakan melalui kaedah sol-gel diikuti dengan teknik salutan putaran. Kadar aliran gas hidrogen yang berlainan digunakan semasa proses penyepuh lindapan. Kesemua sampel menunjukkan orientasi tinggi pada arah (222) dan berstruktur polihablur. Saiz butiran bertambah apabila kadar aliran bertambah disebabkan pengurangan H 2 . Kajian FTIR menunjukkan kewujudan ikatan O-H dalam julat 3000 -4000 cm -1 dan ia disebabkan oleh aliran gas H 2 semasa proses penyepuh lindapan. Kerintangan filem nipis In 1.92 Fe 0.08 O 3 menurun dan kepekatan pembawa meningkat dengan peningkatan kadar aliran . Kajian ini mempunyai keberertian pada sifat kebergantungan kepada saiz dan ikatan kimia dalam filem Fe terdop In 2 O 3 . Kata kunci: Fe terdop indium oksida; filem nipis; FTIR; kadar aliran gas H 2

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“…The measurement was carried out in a dark atmosphere to increase the credibility of data that obtained from HEMS as lighting in the laboratory will affect the result due to the photoconductive effect [26].…”

Section: Resultsmentioning

confidence: 99%

Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol–gel method

Lau

Ibrahim

Baqiah

2015

Applied Surface Science

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Influence of the annealing temperature on the properties of undoped indium oxide thin films obtained by the sol–gel method

Cited by 46 publications

References 18 publications

Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells

Structural, optical and luminescent characteristics of sprayed fluorine-doped In2O3 thin films for solar cells

Influence of Hydrogen Flow Rates Annealing on the Structural, Optical, and Electrical Properties of Sol-Gel Synthesized Fe doped In2O3 Films

Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol–gel method

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