2010
DOI: 10.1016/j.apsusc.2010.08.019
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Influence of the crystal orientation on the electrical properties of AlN thin films on LTCC substrates

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Cited by 29 publications
(11 citation statements)
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“…5 (a) and (b)show the typical I-V characteristics of Zr 0.11 Al 0.89 N films measured at room temperature with the applied voltage from -10 V to 10 V. The leakage current trend is opposite to the dielectric constant, that is, decreasing first and then increasing with increasing the N 2 /Ar-flow ratios and pressures, respectively. The leakage current density of ZrAlN-5/5-0.5 film at 5 V bias reaches a minimum value of ~3×10 -8 A/cm 2 .This data shows that an optimized sputtering atmosphere improves the extent of preferential growth along the c-axis and forms Zr 0.11 Al 0.89 N films with more dense uniform grains and smaller surface roughness which leads to lowered leakage currents[17].Figs. 5 (c) and (d) show the resistivity patterns of Zr 0.11 Al 0.89 N films.…”
mentioning
confidence: 57%
“…5 (a) and (b)show the typical I-V characteristics of Zr 0.11 Al 0.89 N films measured at room temperature with the applied voltage from -10 V to 10 V. The leakage current trend is opposite to the dielectric constant, that is, decreasing first and then increasing with increasing the N 2 /Ar-flow ratios and pressures, respectively. The leakage current density of ZrAlN-5/5-0.5 film at 5 V bias reaches a minimum value of ~3×10 -8 A/cm 2 .This data shows that an optimized sputtering atmosphere improves the extent of preferential growth along the c-axis and forms Zr 0.11 Al 0.89 N films with more dense uniform grains and smaller surface roughness which leads to lowered leakage currents[17].Figs. 5 (c) and (d) show the resistivity patterns of Zr 0.11 Al 0.89 N films.…”
mentioning
confidence: 57%
“…Understanding the underlying leakage current mechanism also is of great importance in order to predict the behavior at elevated temperatures or electric field strengths. In the past, several publications addressed this issue using different substrates and device configurations such as metal-insulator-metal (MIM) or metal-insulator-semiconductor (MIS) [6,[10][11][12][13]. It can be concluded from these investigations, that the dominating conduction mechanism seems to be strongly dependent on the applied electric field.…”
Section: Introductionmentioning
confidence: 97%
“…Literature reports that the surface roughness influences c-axis orientation significantly [7,28]. Therefore, the LTCC substrates were polished.…”
Section: Sample Preparationmentioning
confidence: 99%
“…First works on this topic focused on the application of AlN as a heat spreader [7,28]. The used LTCC ceramic in this study has still a CTE mismatch and the layer was sputtered on the pristine and therefore rough ceramic surface.…”
Section: Introductionmentioning
confidence: 99%