Impact of film thickness on the temperature-activated leakage current behavior of sputtered aluminum nitride thin films

Schneider, Michael; Bittner, A.; Schmid, U.

doi:10.1016/j.sna.2015.01.032

Cited by 26 publications

(7 citation statements)

References 24 publications

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“…Previous studies have shown that there is an exponential increase of the current leakage density with temperature, which might lead to significant decrease in the leakage resistance of the piezoelectric element (neglected in that study) with temperature [20].…”

Section: E Electrical Parametersmentioning

confidence: 78%

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Experimental and Theoretical Study of a Piezoelectric Vibration Energy Harvester Under High Temperature

Arroyo

Jia

et al. 2017

J. Microelectromech. Syst.

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Abstract-This work focuses on studying the effect of increasing the ambient temperature up to 160• C on the power harvested by a MEMS piezoelectric micro-cantilever manufactured using an aluminum nitride-on-silicon fabrication process. An experimental study shows that the peak output power decreases by 60% to 70% depending on the input acceleration. A theoretical study establishes the relationship of all important parameters with temperature and includes them into a temperature-dependant model. This model shows that around 50% of the power drop can be explained by a decreasing quality factor, and that thermal stresses account for around 30% of this decrease.

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Section: E Electrical Parametersmentioning

confidence: 78%

“…This assumption is driven by the fact that the silicon device layer is approximately 10 times thicker than the other ones. The equivalent mass of a plain cantilever beam with a proof mass m l and significant beam mass m b is approximated by (20) [15].…”

Section: B Resonance Frequencymentioning

confidence: 99%

Experimental and Theoretical Study of a Piezoelectric Vibration Energy Harvester Under High Temperature

Arroyo

Jia

et al. 2017

J. Microelectromech. Syst.

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“…The deposition of highly c-axis oriented 600 nm thick granular AlN layers onto (100) n-type Si wafers by DC sputtering has been described in previous publications. 16,17,38 For AC impedance spectroscopy measurements, Al top electrodes (1 mm diameter) were deposited onto the AlN surfaces. Furthermore, the backsides of the 525 μm thick n-Si substrates were fully covered with Al, as depicted in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…15 AlN may be a promising candidate due to its large bandgap, good insulating behavior, a thermal expansion coefficient that is comparable to Si, compatibility with standard CMOS processes, thermal conductivity, and excellent chemical stability. [16][17][18] Furthermore, AlN thin films show interesting piezoelectric performance, which makes them suitable candidates for application as actuators. [19][20][21] AlN has also been discussed in the context of micro-machined resonators for viscosity and density sensing of liquids, 22,23 surface acoustic wave applications, 24,25 and blue light emitting diodes.…”

Section: Introductionmentioning

confidence: 99%

Impedance spectroscopy of Al/AlN/n-Si metal-insulator-semiconductor (MIS) structures

Schmidt

Mayrhofer

Schmid

et al. 2019

Journal of Applied Physics

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In this work, a comprehensive characterization of metal-insulator-semiconductor structures by impedance spectroscopy is demonstrated for the case of electrically insulating, highly c-axis oriented, 600 nm sputter-deposited AlN films on n-Si substrates with Al top electrodes. Direct visual analysis and equivalent circuit fitting of the dielectric data were performed. For the latter procedure, the circuit model consisted of three series resistor-capacitor connection elements for the three dielectric contributions detected. The three contributions were identified as the AlN film, n-Si substrate, and an interface barrier effect. Several essential device parameters were determined separately, by visual or equivalent circuit fitting analysis, such as the dielectric permittivity of the AlN layer, the temperature dependence of the AlN permittivity, and the resistances of the AlN layer, the n-Si substrate, and the interface contribution. Furthermore, DC bias dependent impedance measurements allowed the identification of a Schottky-type interface barrier.

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“…Owing to its well oriented crystal structure, AlN does not require poling. The high chemical and thermal stability of AlN and ability to deposit piezoelectric AlN film via low temperature process such as sputtering [22] also make it an attractive material for the development of touch sensors on flexible substrates. The use of GFET, instead of conventional transistors, is explored here for low-voltage low-power operation.…”

Section: Introductionmentioning

confidence: 99%

Low Voltage Graphene FET Based Pressure Sensor

2018

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This paper presents a low voltage graphene field effect transistor (GFET) based pressure sensor. The sensor comprises of GFET connected with a piezoelectric Aluminium Nitride (AlN) capacitor in an extended gate configuration. In this configuration, the piezopotential generated across the AlN capacitor, as a result of applied pressure, appears at the gate terminal of GFET and modulates the channel current. The sensor operates at a remarkably low voltage (100mV) and exhibits a sensitivity of about 7.18× 10-3 Pa-1 for a pressure range of 3.25-9.74 kPa. These values make the developed GFET sensor suitable for tactile skin in robotics and prosthetics and for wearable health monitoring devices.

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Impact of film thickness on the temperature-activated leakage current behavior of sputtered aluminum nitride thin films

Cited by 26 publications

References 24 publications

Experimental and Theoretical Study of a Piezoelectric Vibration Energy Harvester Under High Temperature

Experimental and Theoretical Study of a Piezoelectric Vibration Energy Harvester Under High Temperature

Impedance spectroscopy of Al/AlN/n-Si metal-insulator-semiconductor (MIS) structures

Low Voltage Graphene FET Based Pressure Sensor

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