Influence of the dislocation density on the performance of heteroepitaxial indium phosphide solar cells

Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures

“…3,4 It has been well established that dislocations considerably influence the electronic and optical properties of semiconductor heterostructures and device performance. [5][6][7] The way in which misfit dislocations are introduced is intimately related with the actual epitaxial growth mechanism. [7][8][9][10][11][12][13][14][15] Therefore, study of dislocations is an important field in molecular-beam epitaxy ͑MBE͒ grown heterostructures.…”