Influence of the Ge diffusion on the magnetic and structural properties in Fe3Si and CoFe epilayers grown on Ge

Ikawa, Masahiko; Kawano, Mahiru; Sakai, Shoichiro; Yamada, Shinya; Kanashima, Takeshi; Hamaya, Kohei

doi:10.1016/j.jcrysgro.2016.09.070

Cited by 10 publications

(10 citation statements)

References 33 publications

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“…One of the issues is the degradation of the magnetic properties of the top-Fe 3 Si layer derived from the diffusion of Ge atoms, as depicted in figure 1(a). According to our previous work [21], the magnetic properties of a body-centered-cubic FM, CoFe, are not degraded even on low-temperature-grown Ge layers. Thus, the use of CoFe as a top FM layer is a good strategy for vertical-type Ge-channel magnetoresistive devices (figure 1(b)) [24].…”

Section: Introductionmentioning

confidence: 63%

“…To suppress the interfacial reaction and/or atomic interdiffusion at the heterointerfaces, we have to gradually elevate the growth temperature during the initial growth [14][15][16]. However, when all-epitaxial Fe 3 Si/Ge/Fe 3 Si trilayers were formed only by the MBE method, ideal magnetization reversal processes could not be reproduced because of some unexpected issues [21].…”

Section: Introductionmentioning

confidence: 99%

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Low-temperature growth of fully epitaxial CoFe/Ge/Fe₃Si layers on Si for vertical-type semiconductor spintronic devices

Sakai

Kawano

Ikawa

et al. 2017

Semicond. Sci. Technol.

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We develop a low-temperature growth technique of epitaxial Ge layers on a body-centered-cubic ferromagnetic metal (bcc-FM), Fe 3 Si, by combining solid phase epitaxy (SPE) and molecular beam epitaxy (MBE). The insertion of an SPE-grown Ge layer enables two-dimensional epitaxial growth of Ge layers by MBE even at a growth temperature of ∼175 • C. Thanks to the relatively flat surface of the Ge epilayers, we can obtain an epitaxial CoFe (bcc-FM) layer on top of the Ge layers, leading to the all-epitaxial CoFe/Ge/Fe 3 Si trilayer with a reasonable magnetization reversal process. We believe that the all-epitaxial CoFe/Ge/Fe 3 Si trilayer has great potential to be utilized as novel vertical-type Ge-channel spintronic devices.

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Section: Introductionmentioning

confidence: 63%

Section: Introductionmentioning

confidence: 99%

Low-temperature growth of fully epitaxial CoFe/Ge/Fe₃Si layers on Si for vertical-type semiconductor spintronic devices

Sakai

Kawano

Ikawa

et al. 2017

Semicond. Sci. Technol.

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“…Thus, the large enhancement in the spin resistance of the FM/Ge contacts can be ignored. The growth of the epitaxial FM layers on Ge was already shown elsewhere [ 25 , 46 , 47 , 48 ]. Finally, by using electron beam lithography and Ar ion milling, the grown FM/ n -Ge layers were patterned into the FM contacts with various sizes ( S =

, shown in Figure 2 b), ranging from 0.8

to 10

.…”

Section: Samples and Fabrication Proceduresmentioning

confidence: 98%

Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts

et al. 2018

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We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures.

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“…Currently, magnetic metal oxide and its compounds as spinel structure (AB2O4) are effective electro-catalysts for wastewater and sewage treatment (Zie et al, 2017; El Nahrawy et al, 2019). These nanomaterials are employed in a number of fields, including gas sensors, catalysis, Opto-magnetic devices, electromagnetics, pigments, electrochemical devices, converters, drug delivery, and photovoltaics Ikawa et al, 2017). ZFO nanoparticles with various nanostructured morphologies, including rode-like, flower-shaped, and spherical, were synthesized to better understand the critical role of nanostructure morphology in determining performance (Li et al, 2012).…”

Section: Introductionmentioning

confidence: 99%

Morphological of Zinc Ferrite Nanostructure Using the Hydrothermal Synthesis

Lestari

2022

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Over the last two decades, many methods for synthesizing various ZnFe2O4 nanostructures of uniform size and shape, such as nanospheres, nanoflowers, nanorods, and nanotubes, have been developed. It seems challenging to investigate a practical and cost-effective method to synthesize cubic ZnFe2O4 magnetite with cubic morphological properties in an aqueous solution. The morphology of zinc ferrite nanostructures is mostly random and non-uniform. The objective of this study is to create reasonably uniform single-crystal zinc ferrite nanocubes. The hydrothermal method was used to successfully sample zinc ferrite by varying the amount of (En) ethylenediamine (0 - 2.4 mL) in the solution. The outcomes demonstrated that the nanocubes, with a particle size of nearly 48 nm, had a more uniform morphology than other samples. The morphology and dimensions of the samples were examined using scanning electron microscopy in conjunction with energy dispersion X-ray spectroscopy.

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Influence of the Ge diffusion on the magnetic and structural properties in Fe3Si and CoFe epilayers grown on Ge

Cited by 10 publications

References 33 publications

Low-temperature growth of fully epitaxial CoFe/Ge/Fe₃Si layers on Si for vertical-type semiconductor spintronic devices

Low-temperature growth of fully epitaxial CoFe/Ge/Fe₃Si layers on Si for vertical-type semiconductor spintronic devices

Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts

Morphological of Zinc Ferrite Nanostructure Using the Hydrothermal Synthesis

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Influence of the Ge diffusion on the magnetic and structural properties in Fe3Si and CoFe epilayers grown on Ge

Cited by 10 publications

References 33 publications

Low-temperature growth of fully epitaxial CoFe/Ge/Fe3Si layers on Si for vertical-type semiconductor spintronic devices

Low-temperature growth of fully epitaxial CoFe/Ge/Fe3Si layers on Si for vertical-type semiconductor spintronic devices

Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts

Morphological of Zinc Ferrite Nanostructure Using the Hydrothermal Synthesis

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Product

Resources

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Low-temperature growth of fully epitaxial CoFe/Ge/Fe₃Si layers on Si for vertical-type semiconductor spintronic devices

Low-temperature growth of fully epitaxial CoFe/Ge/Fe₃Si layers on Si for vertical-type semiconductor spintronic devices