Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogen

Temperature influence on the growth of gallium nitride by HVPE in a mixed H2/N2 carrier gas

“…One of the major difficulties is the occurrence of premature parasitic nucleation on the reactor walls upstream or in the deposition zone, which dramatically limits the possibility of obtaining reproducible results. In previous paper, we have demonstrated the existence of various growth mechanisms after the synthesis of systematic experimental studies of the growth of GaN as a function of physical parameters and thermodynamical and kinetic modelling [11][12][13]. A phenomenological model [14] has been developed which takes into account the two desorption mechanisms involved in the growth of {0 0 1} GaAs [15] and the experimental results published by Seifert et al [16] for the growth of (00.1) GaN.…”

Crystal growth of GaN on (0001) face by HVPE: Ab initio simulations

“…The thermodynamics of the HVPE growth has been studied extensively [11][12][13][14][15][16][17]. It has been established that gallium is transported predominantly by GaCl where the HCl to GaCl conversion ratio is as high as 90% [18].…”

Low-cost high-quality GaN by one-step growth

“…In this reactor configuration where the chlorides and hydrides are separately produced, then mixed homogeneously upstream the substrate, the experimental conditions are controlled. These well-defined conditions are used to compute the expected growth rate according to the theoretical model widely described in previous papers [22][23][24]. This phenomenological model is based on the thermodynamic and kinetic analysis and takes into account a growth mechanism involving the chlorine desorption by GaCl as GaCl 2 and an etching reaction by HCl.…”

“…The H 2 ratio in the (N 2 +H 2 ) total carrier gas labelled RH 2 was varied from 0 (no H 2 ) to 1 (full H 2 carrier gas). In these experimental conditions, the kinetic process is mainly governed by the GaCl 2 -HCl mechanism corresponding to a negative value of the classical supersaturation of the vapour phase, thus to an expected etching of the substrate by the HCl [22][23][24]. A study was then carried out on heavily dense substrates presenting a dielectric mask with 1-mm-wide open stripes every 1.5 and 3 mm, 2-mm-wide every 2.5 and 5 mm, and 5-mm-wide every 5.5 and 10 mm.…”