Low-cost high-quality GaN by one-step growth

Tourret, J.; Gourmala, O.; Trassoudaine, Agnès; André, Yves-Bernard; Gil, Evelyne; Castelluci, Dominique; Cadoret, R.

doi:10.1016/j.jcrysgro.2007.11.091

Cited by 5 publications

(3 citation statements)

References 25 publications

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“…This dependence is related to the near-equilibrium conditions in the HVPE process. Growth is governed by surface kinetics: adsorption and decomposition of the growth precursors, desorption and diffusion of the ad-species, as demonstrated by the strong temperature dependence of GaN HVPE growth rate under optimized conditions. , The growth rate of GaN NRs is almost low regarding the capabilities of HVPE for the growth of GaN bulk layers (up to 100 μm/h) . With respect to the state-of-the art, the hexagonal GaN NRs has been obtained.…”

Section: Discussion: Gan Nr Growth Mechanismmentioning

confidence: 99%

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Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Lekhal

André

Trassoudaine

et al. 2012

Crystal Growth & Design

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GaN nanorods (NRs) with exceptional crystal-defined morphologies were grown by near-equilibrium hydride vapor phase epitaxy (HVPE) on c-plane sapphire (0001) and silicon (111) substrates. Hexagonal faceted individual, bunched, and hyperbunched GaN NRs were synthesized by using a catalyst-free process. GaN NRs with a diameter in the range of 125–700 nm and a length in the range of 0.9–3 μm were grown in a record short process time of 30 min. The influence of growth temperature and ammonia gas flow rate was investigated to establish the nucleation and the growth mechanisms of the GaN NRs. Shape and crystallographic facets of the NRs are discussed and a condensation growth mechanism is proposed for the formation of bunched GaN NRs. Emphasis is placed on the crystal symmetry of the nuclei in the first stage of growth. The morphology and the structural properties were analyzed by field emission scanning electron microscopy (SEM) and X-ray diffraction spectroscopy (XRD).

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Section: Discussion: Gan Nr Growth Mechanismmentioning

confidence: 99%

“…GaN NRs were grown in a 2 in. horizontal home-designed HVPE reactor at atmospheric pressure, heated by a six-zone furnace. , In a first upward zone, GaCl vapor species were formed by reacting gaseous HCl with liquid gallium at 800 °C. NH 3 species, used as the group V flow, were directly introduced into a central zone.…”

Section: Methodsmentioning

confidence: 99%

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Lekhal

André

Trassoudaine

et al. 2012

Crystal Growth & Design

Self Cite

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show abstract

“…Wang et al, 2006;Kang et al, 2007), the different patterns (shapes or sizes) of the patterned sapphire substrate were found to be able to influence the growth behavior and dislocation distribution of the GaN epilayers. The epitaxial lateral overgrowth growth by hydride vapor phase epitaxy of GaN on patterned metalorganic vapor-phase epitaxy GaN/sapphire and sapphire substrates was investigated by Tourret (Tourret et al, 2008). High-quality uniform GaN films about 10 mm thick were successfully grown after epitaxial lateral overgrowth and coalescence on sapphire substrates.…”

Section: Epitaxial Lateral Overgrowthmentioning

confidence: 99%